Effects of Curvature on Material Removal in NC Polishing of Aspheric Part

2012 ◽  
Vol 428 ◽  
pp. 28-32
Author(s):  
Di Zheng ◽  
Yong Jie Shi ◽  
Yuan Wang ◽  
Xiao Jun Zhao ◽  
Lun Pan ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Radius Of Curvature ◽  
Removal Rates ◽  
Hertz Theory ◽  
Polishing Force ◽  
Polishing Pressure

The objective of this paper is to investigate the effect of radius of curvature on the material removal in the NC polishing of aspheric part. The models of polishing pressure and material removal rates were established based on Preston equation and Hertz theory. The material removal rates was analyzed. Experiments were carried out. Results showed that the material removal rate varies with the variations of the curvature under a constant polishing force and velocity, and the part can not be polished uniformly.

Influence of Polishing and Pressing Force on the Material Removal Rate in Fixed Abrasive Polishing with Compact Robot

2012 ◽  
Vol 565 ◽  
pp. 243-248 ◽  
Author(s):  
Masaki Niwa ◽  
Sachiko Ogawa ◽  
Toshiki Hirogaki ◽  
Eiichi Aoyama ◽  
Yoshiaki Onchi
Keyword(s):  
Friction Coefficient ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Glass Plate ◽  
Pressing Force ◽  
Constant Area ◽  
Polishing Force ◽  
Fixed Abrasive ◽  
Polishing Pressure

To help reduce the environmental impact of abrasive polishing, we have investigated the use of a compact robot and fixed-abrasive polishing. We used a five-joint closed-link compact robot with a fine diamond stone on its main axis to polish the glass plate and measured the polishing pressure(=pressing force/stone constant area), the polishing force, and the material removal rate. From these results, we investigated the relationship between the polishing pressure and the polishing force and between the polishing pressure and the material removal rate. We found that there is an interesting relationship between the polishing pressure and polishing force, which is not simply proportional but exponential, that the friction coefficient(=polishing force/pressing force) increases as the polishing pressure increases, and that by focusing on the friction coefficient, we can estimate the material removal rate.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive

2013 ◽  
Vol 797 ◽  
pp. 261-265 ◽  
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Rotational Velocity ◽  
Crystal Substrate ◽  
Polishing Pressure ◽  
Diamond Abrasive ◽  
Abrasive Size

In this paper, according to the slurry ingredients obtained by former research, the influences of the chemical mechanical polishing (CMP) process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR) and surface roughness Ra have been studied in CMP SiC crystal substrate (0001) C and (0001) Si surface based on the diamond abrasive. The research results show that the material removal rate changes with the change of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly, but the maximum of MRR can be obtained at a certain rotational velocity of platen, abrasive size and polishing pressure. The influence of the abrasive size, the platen velocity, the carrier velocity and the polishing pressure on surface roughness is no significant. Under the same conditions, the MRR of CMP the Si surface is larger than that of the C surface. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP SiC crystal substrate.

Experimental Investigation on Effects of Passivants in the Abrasive-Free Polishing of Copper Film

2010 ◽  
Vol 126-128 ◽  
pp. 316-319
Author(s):  
Jhy Cherng Tsai ◽  
Wei Ching Lin
Keyword(s):  
Experimental Data ◽  
Experimental Investigation ◽  
Citric Acid ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Copper Film ◽  
Copper Base ◽  
Polishing Pressure ◽  
Better Than

Abrasive Free Polishing (AFP) is a polishing technology without abrasives and widely employed in copper-base semiconductor fabrications. This paper investigates the effect of passivants, added to the slurry, on the material removal rate (MRR) and the non-uniformity (NU) via experiments. Two kinds of passivants, Benzotriazole (BTA) and citric acid (CA) are added to the slurry for the experiments. Experimental results showed that the MRR increases when polishing pressure increases while NU decreases at the same time. Both MRR and NU tends to increase when rotational speed increases, though MRR and NU at 40 rpm are lower than that at 30 and 50 rpm in the slurry with CA. Experimental data also showed that AFP using the slurry with CA performs better than that with BTA.

Study on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) C Surface Based on Abrasive Alumina (Al2O3)

2012 ◽  
Vol 497 ◽  
pp. 250-255
Author(s):  
Jian Xiu Su ◽  
Jia Xi Du ◽  
Xing Long Liu ◽  
Hai Na Liu
Keyword(s):  
Integrated Circuits ◽  
Material Removal Rate ◽  
Material Removal ◽  
Ph Value ◽  
Removal Rate ◽  
Study Results ◽  
Crystal Substrate ◽  
Slurry Composition ◽  
Polishing Pressure ◽  
Abrasive Size

SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational speed of the polishing platen and the workpiece and the polishing pressure on the material removal rate (MRR) of SiC crystal substrate (0001) C surface based on the alumina abrasive in chemical mechanical polishing (CMP). This study results will provide the reference for developing the slurry, optimizing the process parameters and researching the material removal mechanism in CMP of SiC crystal substrate.

Analysis of the Main Parameters in the Chemical Mechanical Polishing Process

2011 ◽  
Vol 317-319 ◽  
pp. 29-33 ◽  
Author(s):  
Xiang Dong Yang ◽  
Xin Wei ◽  
Xiao Zhu Xie ◽  
Zhuo Chen ◽  
Wei Bo Zou
Keyword(s):  
Surface Quality ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Rotation Speed ◽  
Removal Rate ◽  
Surface Damage ◽  
Mechanical Polishing ◽  
Technological Parameters ◽  
Polishing Pressure

This paper studies the chemical mechanical polishing (CMP) of the wafer's material such as stainless steel, monocrystalline silicon etc, and analyzes how the technological parameters’ impact on the final wafer’s surface material removal rate, surface quality and surface damage like the polishing pad’s speed and the wafer speed, polishing pressure and polishing time.The results show that: when the difference between the polishing pad's rotation speed and the wafer's rotation speed is small and their directions are the same , then the material removal rate of the wafer is larger.when the polishing pressure is selected between 5 to 6.5 kPa, the wafer surface's damage is smaller.The polishing time also play a very important role and affect the surface quality and surface damage of the wafer after polishing.

Temperature Characterization for Nano-Polishing of PCD Composites

2008 ◽  
Vol 381-382 ◽  
pp. 513-516 ◽  
Author(s):  
Y. Chen ◽  
Liang Chi Zhang ◽  
Joseph A. Arsecularatne
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Temperature Rise ◽  
Material Removal ◽  
Removal Rate ◽  
Polycrystalline Diamond ◽  
Theoretical Modelling ◽  
Interface Temperature ◽  
Higher Temperature ◽  
Polishing Pressure

This paper discusses the temperature characterization for nano-polishing of polycrystalline diamond composites (PCDCs) by combined experimental and theoretical modelling. It was found that a higher polishing pressure-speed combination results in a higher temperature rise and material removal rate. To optimize the nano-polishing of PCDCs and achieve a surface roughness of Ra = 50 nm, the interface temperature at polishing needs to be maintained at an appropriate level.

Experimental Investigation of Pressure and Velocity on Chemical Mechanical Planarization

2000 ◽  
Author(s):  
Jhy-Cherng Tsai ◽  
Mingyi Tsai
Keyword(s):  
Experimental Investigation ◽  
Taguchi Method ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Theoretical Models ◽  
Back Pressure ◽  
Wear Model ◽  
Polishing Pressure

Abstract Chemical-mechanical planarization or polishing (CMP) is an emerging process used in surface planarization and polishing for semiconducter wafer with multilevel interconnections. This paper investigates the effects of polishing pressure and velocity on the material removal rate (RR) and the non-uniformity (NU) in the CMP process. Wear models for CMP process from mechanical aspect, including abrasive-based model and flow-based model, are first discussed. Experiments using different polishing pressures, velocities, and back pressures are then designed and conducted based on the Taguchi method. Experimental results showed that RR and NU are consistent with theoretical models in a certain range. Both RR and NU increase as polishing speed increases. As RR and NU also increase with the polishing pressure at low pressure, their values become saturated and then decrease when the pressure exceeds certain value. It further verified that NU can be improved using proper back pressure as predicted by the flow-based wear model.

Aspheric Surface NC Polishing Force-Position Decoupling Control Technology

2013 ◽  
Vol 771 ◽  
pp. 71-74
Author(s):  
Guo Fa Li ◽  
Cui Yun Shan ◽  
Pu Zhao
Keyword(s):  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Control Model ◽  
Decoupling Control ◽  
Control Technology ◽  
Aspheric Surface ◽  
Rotating Speed ◽  
Surface Polishing ◽  
Polishing Force

Based on MTTSD (Magneto-rheological Torque Transmission Servo Devices) and force-position decoupling control technology, an aspheric surface NC polishing project is put forward. The aspheric surface polishing fundamental theory is researched. Under the condition of a constant material removal rate, a new aspheric surface polishing model is brought forward. In addition, under the condition of a constant material removal rate, this paper brought up a polishing force control model and a workpiece rotating speed control model, according to witch, force and rotating speed change with the coordinates of working points, and variation curves are drawn.CLC Number: TH166 Document Identifier: A

Utilizing Small External Vibrational Sources to Increase Polishing Material Removal Rates

2015 ◽  
Author(s):  
M. Mainuddin ◽  
R. Keanini ◽  
B. Mullany
Keyword(s):  
Material Removal Rate ◽  
Material Removal ◽  
High Speed ◽  
Removal Rate ◽  
Low Cost ◽  
Power Input ◽  
Fused Silica ◽  
Removal Rates ◽  
Dc Motors ◽  
Scientific Attention

Although precision polishing of optical grade components using pitch based tools is still common practice, the process has not received the same level of scientific attention as other precision material removal processes. Building on previous research results, this paper demonstrates the relationship between low amplitude, broad spectrum vibrational power input and fused silica material removal rates obtained with different tool-polishing machine combinations. A low cost, easy to implement method of increasing vibrational power is presented and verified through polishing tests. The method uses small, off the shelf, high speed (>10 krpm), DC motors with eccentric masses (0.5 g and 4 g). Attachment of the battery driven motors to the underside of the platen and the workpiece holder increased the vibrational input from 0.7 W to 0.22 W resulting in an increase in the material removal rate from 0.96 mg/hr to 1.10 mg/hr. A method to attenuate process generated vibrations, and thus material removal rates, is also outlined. To achieve this the tool construction is modified by the addition of a cork layer between the substrate and the pitch layer. While this approach is not as flexible as that for increasing the vibrational power input, it successfully attenuated process vibrations (0.2 W to 0.14 W) and reduced the associated material removal rate (9.67 mg/hr to 6.13 mg/hr). The results outlined this paper demonstrate that recording and controlling process vibrations provides practitioners with viable process monitoring and optimization options.

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