Effect of Mn Doping on Optical Properties of Nanostructured ZnO Thin Film

2012 ◽  
Vol 462 ◽  
pp. 201-205 ◽  
Author(s):  
M. Ebrahimizadeh Abrishami ◽  
A. Kompany

Undoped and ZnO: Mn thin films with different Mn content ( 5, 10 and 15 mol%) were grown on glass substrates by spray pyrolysis technique. X-ray diffraction analysis showed that single phase wurtzite structure is formed in all samples. XRD results also indicated that the undoped ZnO were crystallized in c-axis oriented wurtzite structure, while the ZnO: Mn thin films were polycrystalline. The SEM results revealed that Mn presence were modified the surface morphology of the samples. The optical transmittance measurements were performed in the wavelength range from 190 to 1100 nm. The refractive index, extinction coefficient and film thickness were determined by using pointwise unconstrained minimization model. It was observed that the refractive index increased with the increase in Mn concentration. Also, the thin films exhibited the direct band gap increased from 3.20 to 3.28 eV with the increase in Mn content. The optical dispersion parameters have been calculated and analyzed by using Wemple-Di Domenico relation. The obtained values showed that dispersion energy Ed of doped samples was found to be decreasing comparing to undoped thin film.

2019 ◽  
Vol 26 (07) ◽  
pp. 1850223
Author(s):  
Y. BCHIRI ◽  
N. BOUGUILA ◽  
M. KRAINI ◽  
S. ALAYA

In2S3 thin films with different S/In molar ratios (from 1.5 to 3.5) were deposited via a spray pyrolysis technique on glass substrates at 340∘C. Then, the obtained films were annealed at the same temperature 400∘C for 2[Formula: see text]h. X-ray diffraction study reveals the formation of cubic [Formula: see text]-In2S3 phase with (400) as preferred orientation. The crystallite size varies in the range 64–97[Formula: see text]nm. Optical analysis exhibits that transmittance in visible and near infrared regions is higher than 65% for all films. The optical band gap varied from 2.58[Formula: see text]eV to 2.67[Formula: see text]eV. The optical parameters (refractive index, extinction coefficient, dielectric constants) were calculated through the transmittance ([Formula: see text]) and reflectance ([Formula: see text]). Dispersion parameters ([Formula: see text], [Formula: see text]), high frequency dielectric constant ([Formula: see text]), refractive index ([Formula: see text]), oscillator length strength ([Formula: see text]), average oscillator wavelength ([Formula: see text]) and optical moments ([Formula: see text]) were determined by Wemple–DiDomenico model. The surface and volume energy losses with photon energy were also calculated. The optical and electrical conductivities were estimated. These properties of In2S3 films are important for photovoltaic applications.


2018 ◽  
Vol 36 (4) ◽  
pp. 570-583
Author(s):  
H. Mokhtari ◽  
M. Benhaliliba ◽  
A. Boukhachem ◽  
M.S. Aida ◽  
Y.S. Ocak

AbstractThis work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5 °C. For the as-grown layers, M- to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coeffi-cient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E0 as well as dispersion energy Ed were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.


Author(s):  
A. K. Sharma

Tin oxide (SnO2 ) nano particle thin film has been deposited by spray pyrolysis technique using ultrasonic nebulizer of chloride solution (SnCl2.2H2O) over the glass substrate. An aqueous chloride solution was converted into a mist form of vapor using ultrasonic nebulizer and deposited over the heated substrate at temperature 300 ± 100C. The XRD and SEM result shows a regular, smooth, excellent morphology and also found polycrystalline in nature which is also evident in XRD analysis. The average grain size of SnO2 particles were found to be in the range of 25 nm to 35 nm depending on the allowed concentration of chloride solution which is calculated from XRD plot using Debye - Sherror formula. The average thickness of the as prepared film was measured of the order of 120 nm. The optical transmittance properties of the SnO2 thin films have been also measured. The films exhibited an average transmittance value of 93% in recorded range of wavelength. Finally the ethanol gas sensing properties of the thin film (0.1 M concentration) was performed and discussed in detail.


Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 112
Author(s):  
Qais M. Al-Bataineh ◽  
Mahmoud Telfah ◽  
Ahmad A. Ahmad ◽  
Ahmad M. Alsaad ◽  
Issam A. Qattan ◽  
...  

We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.


2011 ◽  
Vol 8 (2) ◽  
pp. 561-565
Author(s):  
Baghdad Science Journal

Cr2O3 thin films have been prepared by spray pyrolysis on a glass substrate. Absorbance and transmittance spectra were recorded in the wavelength range (300-900) nm before and after annealing. The effects of annealing temperature on absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant and optical conductivity were expected. It was found that all these parameters increase as the annealing temperature increased to 550°C.


2018 ◽  
Vol 17 (03) ◽  
pp. 1760037 ◽  
Author(s):  
A. Nancy Anna Anasthasiya ◽  
K. Gowtham ◽  
R. Shruthi ◽  
R. Pandeeswari ◽  
B. G. Jeyaprakash

The spray pyrolysis technique was employed to deposit V2O5 thin films on a glass substrate. By varying the precursor solution volume from 10[Formula: see text]mL to 50[Formula: see text]mL in steps of 10[Formula: see text]mL, films of various thicknesses were prepared. Orthorhombic polycrystalline V2O5 films were inferred from the XRD pattern irrespective of precursor solution volume. The micro-Raman studies suggested that annealed V2O5 thin film has good crystallinity. The effect of precursor solution volume on morphological and optical properties were analysed and reported.


2016 ◽  
Vol 34 (4) ◽  
pp. 828-833 ◽  
Author(s):  
Ijaz Ali ◽  
Amjid Iqbal ◽  
Arshad Mahmood ◽  
A. Shah ◽  
M. Zakria ◽  
...  

AbstractCd1−xZnxSe (x = 0, 0.40 and 1) thin films were deposited on a glass substrate at room temperature by closed space sublimation method. Optical investigation has been performed using spectrophotometry and ellipsometry. It has been found that for as deposited films the optical band gap increased and the optical constants decreased with increasing Zn content. To improve the optical properties of Cd1−xZnxSe thin films annealing effect at 400 °C was taken into consideration for various Zn contents. It was observed that the optical transmittance and band gap decreased while optical constants increased with increasing Zn content after annealing. The effects of composition and annealing on the optical dispersion parameters Eo and Ed were investigated using a single effective oscillator model. The calculated value of the average excitation energy Eo obeys the empirical relation (Eo = Eg/2) obtained from the single oscillator model.


Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Milen Nenkov ◽  
Tamara Pencheva

AbstractA new approach for determination of refractive index dispersion n(λ) (the real part of the complex refractive index) and thickness d of thin films of negligible absorption and weak dispersion is proposed. The calculation procedure is based on determination of the phase thickness of the film in the spectral region of measured transmittance data. All points of measured spectra are included in the calculations. Barium titanate thin films are investigated in the spectral region 0.38–0.78 μm and their n(λ) and d are calculated. The approach is validated using Swanepoel’s method and it is found to be applicable for relatively thin films when measured transmittance spectra have one minimum and one maximum only.


2011 ◽  
Vol 347-353 ◽  
pp. 3481-3484
Author(s):  
Xue Hua Li ◽  
Dong Sheng Wang ◽  
Jian Zhou Du

Based on the single-layer thin film theory, we calculated transmittance of ITO thin film. The reflectivity arrive a maximum or a minimum according to whether the refractive index of film is greater or smaller than the refractive index of the glass substrate. we obtain the same maximum of transparence which is above 95% and the minimum value which decrease to 76.5% with the increase of refractive index.


2013 ◽  
Vol 747 ◽  
pp. 329-332
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen ◽  
Tiparatana Wongcharoen

CdS thin films were prepared by thermal evaporation onto glass substrate in vacuum better than 5.5x10-5 mbar. The obtained films were subsequently annealed in a pure nitrogen atmosphere at temperature between 100 to 500°C for 30 min. The crystal structure and surface morphology of the as-deposited and annealed films were investigated by XRD and SEM, respectively. Optical band gap and Urbach tail values of the films, determined from spectral transmission data, were found to be slightly varied in the range 2.36-2.40 eV and 110-160 meV, respectively, due to annealing temperature. The refractive index of the films was also evaluated from the spectral transmission data. The dependence of the refractive index on the wavelength obeys the single oscillator model, from which the important parameters such as refractive index, extinction coefficient, oscillator energy (E0) and dispersion energy (Ed) of the films with different annealing temperatures were determined. From the experimental results, the optical parameters of the films are obviously influenced by annealing temperature.


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