Study on Correlate Qualitatively the Deposition Conditions with the Morphology of the Nanocomposite Films

2012 ◽  
Vol 562-564 ◽  
pp. 290-293
Author(s):  
Yong Jun Jiang
Keyword(s):  
Cross Section ◽  
Deposition Rate ◽  
Deposition Process ◽  
Nanocomposite Films ◽  
Nitrogen Partial Pressure ◽  
Target Temperature ◽  
Transmission Electron ◽  
Si Content ◽  
Sinx Layer ◽  
Deposition Conditions

In the Nb–Si–N films, Si content (CSi) was varied in each series by changing the power applied on the Si target, whereas the power on the Nb target was kept constant. The microstructure of the coatings was examined by XRD and in cross-section by transmission electron microscopy (TEM). Depending on TS and pN2, the deposition rate showed significant variations from 0.04 to 0.18 nm/s. The correlation between film morphology (preferential orientation of crystallites, grain size, column dimensions, thickness of the SiNx layer covering NbN crystallites) and the deposition conditions (power applied on Si target, temperature, nitrogen partial pressure and deposition rate) provides useful information for optimizing the deposition process.

scholarly journals Structural, optical and electrical properties of reactively sputtered CrxNy films: Nitrogen influence on the phase formation

2017 ◽  
Vol 11 (1) ◽  
pp. 45-51 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Zlatko Rakocevic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Phase Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Deposition Process ◽  
Columnar Structure ◽  
Nitrogen Partial Pressure ◽  
Tem Analysis ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Partial Pressures

The properties of various CrxNy films grown by direct current (DC) reactive sputtering process with different values of nitrogen partial pressures (0, 2?10-4, 3.5?10-4 and 5?10-4 mbar) were studied. The structural analysis of the samples was performed by using X-ray diffraction and transmission electron microscopy (TEM), while an elemental analysis was realized by means of Rutherford backscattering spectrometry. By varying nitrogen partial pressure the pure Cr layer, mixture of Cr, Cr2N and CrN phases, or single-phase CrN was produced. TEM analysis showed that at pN2 = 2?10-4 mbar the layer has dense microstructure. On the other hand, the layer deposited at the highest nitrogen partial pressure exhibits pronounced columnar structure. The optical properties of CrxNy films were evaluated from spectroscopic ellipsometry data by the Drude or combined Drude and Tauc-Lorentz model. It was found that both refractive index and extinction coefficient are strongly dependent on the dominant phase formation (Cr, Cr2N, CrN) during the deposition process. Finally, the electrical studies indicated the metallic character of Cr2N phase and semiconducting behaviour of CrN.

Effects of Plasma Surface Treatment on the Self-forming Barrier Process in Porous SiOCH

2008 ◽  
Vol 1079 ◽  
Author(s):  
Junichi Koike ◽  
Junichi Koike ◽  
Zsolt Tökei
Keyword(s):  
Cross Section ◽  
Deposition Process ◽  
Plasma Damage ◽  
X Ray ◽  
Transmission Electron ◽  
Plasma Surface Treatment ◽  
Diffusion Barrier Layer ◽  
Before And After ◽  
Low K ◽  
Secondary Ion

ABSTRACTSelf-forming barrier process was carried out on a porous low-k material with the Cu-Mn alloys. The effects of various surface treatments were investigated in the sample having a pore size of 0.9 nm and a porosity of 25%. Before and after annealing, samples were analyzed in cross section with transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS). Concentration profile was also analyzed with time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The results indicated the penetration of Cu into the low-k interior during deposition, followed by the segregation of Cu at the low-k/Si interface during subsequent annealing. Although a diffusion barrier layer was formed and no further Cu penetration was not observed during annealing, initial Cu penetration in the deposition process was detrimental and should be prevented by restoring the plasma damage on the low-k surface.

Effect of Si Addition on the Reaction Growth and Morphology of an Aluminide Compound in Al-Cu-Si/Ti-W Bilayers

1992 ◽  
Vol 280 ◽  
Author(s):  
M. Park ◽  
S. J. Krause ◽  
S. R. Wilson
Keyword(s):  
Cross Section ◽  
Detrimental Effect ◽  
Alloy Film ◽  
Al Alloy ◽  
Number Density ◽  
Plan View ◽  
Transmission Electron ◽  
Spike Number ◽  
Si Content ◽  
Si Addition

ABSTRACTThe effect of the addition of Si to an Al alloy on the reaction morphology of Al12W in Al-Cu-Si/Ti-W bilayers was studied with plan-view and cross-section transmission electron microscopy (TEM). The addition of 0.5 wt.% Si to an Al-0.5Cu alloy film increases multiple spiked growths of the Al12W compound by the reaction of the Al-0.5Cu-0.5Si film with the Ti-W sublayer after heat treatment at 450°C for 30 min. Increasing the Cu and Si content from 0.5 to 1.5% significantly reduced the spiked growth of Al12W into the Al-1.5Cu-1.5Si film. However the spike number density remained high compared to the reaction of a binary Al-1.5Cu film with the Ti-W layers. The result indicates that the addition of Si to form a ternary Al-Cu-Si film results in a more irregular, less planar Al12W morphology. This morphology can have a detrimental effect on thermal stability and electromigration resistance.

scholarly journals The Influence of Technological PVD Process Parameters on the Topography, Crystal and Molecular Structure of Nanocomposite Films Containing Palladium Nanograins

2014 ◽  
Vol 16 (3) ◽  
pp. 18-24 ◽  
Author(s):  
Joanna Rymarczyk ◽  
Elżbieta Czerwosz ◽  
Mirosław Kozłowski ◽  
Piotr Dłużewski ◽  
Wojciech Kowalski
Keyword(s):  
Electron Microscopy ◽  
Process Parameters ◽  
Physical Vapor Deposition ◽  
Structural Changes ◽  
Deposition Process ◽  
Structure Type ◽  
Nanocomposite Films ◽  
Palladium Acetate ◽  
Force Microscopy ◽  
Transmission Electron

Abstract The paper describes the preparation and characteristics of films composed of Pd nanograins placed in carbonaceous matrix. Films were obtained in PVD (Physical Vapor Deposition) process from two sources containing: the first one - fullerene powder and the second one - palladium acetate. The topographical, morphological and structural changes due to different parameters of PVD process were studied with the use of Atomic Force Microscopy and Scanning Electron Microscopy, whereas the structure was studied with the application of the Transmission Electron Microscopy and Fourier Transform Infrared Spectroscopy methods. It was shown that topographical changes are connected with the decomposition ratio of Pd acetate as well as the form of carbonaceous matrix formed due to this decomposition. Palladium nanograins found in all films exhibit the fcc structure type and their diameter changes from 2 nm to 40 nm depending on the PVD process parameters.

scholarly journals FABRICATION OF 2- AND 3-DIMENSIONAL NANOSTRUCTURES

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3207-3213 ◽  
Author(s):  
Hong Jiang ◽  
Camelia N. Borca ◽  
Bo Xu ◽  
Brian W. Robertson
Keyword(s):  
Electron Beam ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Scanning Transmission Electron Microscope ◽  
3 Dimensional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
One Step ◽  
Deposition Conditions

Amongst tools for fabricating periodic and aperiodic nanostructures and nanodevices, electron beam-induced organometallic chemical vapor deposition (E-OMCVD) offers a highly flexible and controllable one-step deposition process. E-OMCVD enables maskless fabrication of nanoscale research and custom structures that have least dimensions near or below 10nm – a scale at which other methods prove difficult or costly. Using the focused electron beam in a modified HB501 field-emission scanning transmission electron microscope (STEM), pads and wires with uniform thickness and well-defined shapes have been defined and deposited. Although conditions for fabricating the smallest deposits have not yet been optimized, the edge acuity (sharpness) of the deposits is consistently as low as 4nm or less and the corresponding smallest wire width is 8nm. Under different deposition conditions, three-dimensional open structured nanonetworks have been fabricated. Results of an investigation of E-OMCVD parameters are presented for the metallocene compound, nickelocene (Ni(C5H5 )2), as source organometallic.

Diamondlike Carbon-Metal Nanocomposite Films for Medical Applications

2004 ◽  
Vol 843 ◽  
Author(s):  
R. J. Narayan ◽  
H. Abernathy ◽  
L. Riester ◽  
C. J. Berry ◽  
R. Brigmon
Keyword(s):  
Composite Films ◽  
Antimicrobial Properties ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Nanocomposite Films ◽  
Transmission Electron ◽  
Diamondlike Carbon ◽  
High Fraction ◽  
Nanocomposite Structures

ABSTRACTSilver and platinum were incorporated within diamondlike carbon (DLC) thin films using a multicomponent target pulsed laser deposition process. Transmission electron microscopy of the DLC-silver and DLC-platinum composite films reveals that these films self-assemble into particulate nanocomposite structures that possess a high fraction of sp3-hybridized carbon atoms. DLC-silver-platinum films demonstrated exceptional antimicrobial properties against Staphylococcus and Pseudomonas aeruginosa bacteria.

Effect of the deposition rate on thin films of CuZnAl obtained by thermal evaporation

2010 ◽  
Vol 1276 ◽  
Author(s):  
L. López-Pavón ◽  
E. López-Cuellar ◽  
A. Torres-Castro ◽  
C. Ballesteros ◽  
C. José de Araújo
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Deposition Rate ◽  
Thermal Evaporation ◽  
Deposition Process ◽  
Significant Loss ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Evaporation Source

AbstractThermal evaporation is used to deposit thin films of CuZnAl on silicon substrates. For this purpose, a CuZnAl shape memory alloy is used as evaporation source. The chemical composition and the phases present in the films are evaluated at two different deposition rates: 7 and 0.2 Å/s. The thin films are heat treated to promote the diffusion of the elements and characterized by X-ray Diffraction, Energy Dispersive X-ray Spectroscopy and Scanning Transmission Electron Microscopy (STEM). It is shown that the chemical composition of the thin films is significantly different to that of the CuZnAl alloy used as evaporation source. Moreover, the films produced at 7 Å/s show a significant loss of Zn, contrary to the results obtained using a deposition rate of 0.2 Å/s. It is also observed that the composition varies across the thickness of the film, suggesting that the various alloying elements are evaporated at different rates during the deposition process. Finally the predominant phases present in the films belong to the AlxCuy family.

A tilting high temperature gas reaction chamber for the JEM 7A T.E.M.

1978 ◽  
Vol 36 (1) ◽  
pp. 70-71
Author(s):  
Brian L. Rhoades
Keyword(s):  
Cross Section ◽  
Reaction Chamber ◽  
Objective Lens ◽  
Reduced Cross Section ◽  
Cross Sectional ◽  
Structural Investigations ◽  
Transmission Electron ◽  
Dynamic Experiments ◽  
Successful Design ◽  
Thermocouple Junction

A gas reaction chamber has been designed and constructed for the JEM 7A transmission electron microscope which is based on a notably successful design by Hashimoto et. al. but which provides specimen tilting facilities of ± 15° aboutany axis in the plane of the specimen.It has been difficult to provide tilting facilities on environmental chambers for 100 kV microscopes owing to the fundamental lack of available space within the objective lens and the scope of structural investigations possible during dynamic experiments has been limited with previous specimen chambers not possessing this facility.A cross sectional diagram of the specimen chamber is shown in figure 1. The specimen is placed on a platinum ribbon which is mounted on a mica ring of the type shown in figure 2. The ribbon is heated by direct current, and a thermocouple junction spot welded to the section of the ribbon of reduced cross section enables temperature measurement at the point where localised heating occurs.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Sign in / Sign up

Export Citation Format

Share Document