Target to Substrate Distance Dependent Optical and Electrical Properties of Sputtered NiO Films

2012 ◽  
Vol 584 ◽  
pp. 33-36
Author(s):  
Avula Mallikarjuna Reddy ◽  
Akepati Sivasankar Reddy ◽  
Pamanji Sreedhara Reddy
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Substrate Distance ◽  
High Electrical Resistivity ◽  
Dc Reactive Magnetron Sputtering ◽  
Direct Band ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates at various target to substrate distances in the range of 60 to 80 mm by dc reactive magnetron sputtering technique. It was observed that target to substrate distance influenced the morphological, optical and electrical properties of the deposited films. The optical results revealed that the optical transmittance of the films increased with increasing the target to substrate distance upto 70 mm, thereafter it was decreased. The increase in transmittance of the films was due to an increase in size of the grains. The NiO films exhibited an optical transmittance of 60 % and direct band gap of 3.82 eV at target to substrate distance of 70 mm. The films showed high electrical resistivity of 37.3 Ωcm at target to substrate distance of 60 mm and low electrical resistivity of 5.1 Ωcm at target to substrate distance of 70 mm. At high target to substrate distance of 80 mm the electrical resistivity of the film was increased.

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

scholarly journals Nanoscaled Multilayer Thin Films Based on GZO

2008 ◽  
Vol 2 ◽  
pp. 61-67 ◽  
Author(s):  
Ching Hsuang Cheng ◽  
Wan Yu Wu ◽  
Jyh Ming Ting
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Surface Layer ◽  
Theoretical Calculations ◽  
Optical Transmittance ◽  
Light Transmittance ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

Nanoscaled gallium-doped ZnO (GZO) thin films, bi-layer Pt/GZO thin films, and tri-layer GZO/Pt/GZO thin films were prepared and their characteristics were investigated. These films were deposited on glass substrates using either rf or dc magnetron sputter deposition. The deposition time and the target-to-substrate distance were varied to obtain different total film thicknesses and layer thicknesses. Effects of total film and layer thicknesses on the optical properties and the electrical properties were studied. Theoretical calculations were performed to discuss effect of the thickness on the optical transmittance of the GZO film. As-deposited GZO films show high electrical resistivity, which was greatly reduced by 2 to 3 orders of magnitude due to the introduction of a surface layer of Pt film. However, the optical transmittance was also reduced. This was improved by using an addition anti-refractive GZO surface layer on the Pt/GZO. A GZO/Pt/GZO film exhibiting visible light transmittance greater than 75% and electrical resistivity in the order of 10-4 ohm-cm was obtained.

A Study on the Optical and Electrical Properties of GZO/Pt/GZO Multilayered Transparent Electrodes for Photonic Applications

2014 ◽  
Vol 905 ◽  
pp. 78-81
Author(s):  
Moon Ki Jeong ◽  
Hee Chul Lee
Keyword(s):  
Electrical Properties ◽  
Optical Transmittance ◽  
Grain Structure ◽  
Optical And Electrical Properties ◽  
Transparent Electrodes ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Pt Films

We have proposed, prepared, and characterized Pt-inserted Ga-doped ZnO (GZO) transparent electrodes of GZO/Pt/GZO (GPG) multilayers on glass substrates. The GZO and Pt films were in-situ deposited by RF and DC sputtering without breaking vacuum, respectively. The grain structure and deposition rate of the GZO films grown on the Pt insertion layer were different from those of the GZO films sputtered on glass substrates. Pt-inserted GZO electrodes showed remarkably decreased resistivity although the thickness of the Pt layer was as thin as 9 nm. However, the optical transmittance of the GPG electrodes was severely degraded with an increasing thickness of the Pt layer. The structural, optical, and electrical properties of GPG multilayered transparent electrodes were affected by post-annealing conditions such as environment and temperature. That may be associated with an increase in crystallinity and inter-diffusion between Pt and GZO films.

Effect of Gold Addition on Electrical and Optical Properties of NiO Films by Rf Sputtering

2010 ◽  
Vol 123-125 ◽  
pp. 647-650 ◽  
Author(s):  
S.C. Chen ◽  
Y.C. Lin ◽  
T.Y. Kuo ◽  
C.L. Chang
Keyword(s):  
Electrical Resistivity ◽  
Optical Properties ◽  
Composite Films ◽  
Rf Sputtering ◽  
The Other ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Xrd Patterns ◽  
Nio Films

The NiO-Au composite films with Au contents of 0 to 33.7 at.% are deposited on glass substrates. The high electrical resistivity (ρ) of Au-doped NiO films with Au contents below 1.0 at.% is difficlut to measure by four point probe. The ρ value could be reduced to 30.4 Ω-cm as Au content of 1.4 at.% is added into NiO film. It is reduced significantly to 0.375 Ω-cm as Au content is increased to 13.6 at.%. Further increasing the Au content to 33.7 at.%, the ρ value of NiO film is further decreased to 4 x 10-4 Ω-cm. On the other hand, the transmittance of Au doped NiO films also decreases with increasing Au contents. The transmittance for pure NiO film is as high as 96 %. As the Au contents of 1.4, 13.6, and 33.7 % are added into NiO film, they are decreased drastically to 45 %, 20 %, and 9 % respectively. The XRD patterns of Au-doped NiO films with Au content below 9.6 at.% only appear NiO peaks and their (200) peaks shift slightly to low angle as Au content is increased. When Au content is added to above 9.6 at.%, the NiO crystalline become worse. In addition, further increasing the Au content to above 13.6 at.%, the (111) peak of Au also appears in XRD patterns. This indicating that the Au atoms instead of part of Ni atoms results in the enlargement of NiO lattice for Au-doped NiO film with lower Au contents, but large amount of Au atoms are precipitated from the NiO lattice when the content of Au in the NiO film is increased to above 13.6 at.%.

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

scholarly journals Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets

1991 ◽  
Vol 14 (3) ◽  
pp. 111-118 ◽  
Author(s):  
C. Geoffroy ◽  
G. Campet ◽  
F. Menil ◽  
J. Portier ◽  
J. Salardenne ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Atomic Ratio ◽  
Optical And Electrical Properties ◽  
Argon Gas ◽  
Glass Substrates ◽  
Different Types ◽  
Spray Technique ◽  
Tin Oxide Films

Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2or SnO2–SnF2mixtures, ceramics obtained by casting either an aqueous SnO2–SnF2slurry or a suspension of tin oxide in molten tin fluoride. The samples were prepared in oxygen-argon gas mixtures in which the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The optical and electrical properties of the obtained thin films have been studied and compared to those of the films obtained by spray technique.

Annealing Effects on Ta Doped SnO2 Films

2012 ◽  
Vol 1454 ◽  
pp. 245-251
Author(s):  
Junjun Jia ◽  
Yu Muto ◽  
Nobuto Oka ◽  
Yuzo Shigesato
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Beneficial Effect ◽  
Hall Mobility ◽  
Carrier Density ◽  
Annealing Temperature ◽  
Annealing Effect ◽  
Scattering Mechanism ◽  
Glass Substrates ◽  
Annealing Effects

ABSTRACTTa doped SnO2 (TTO) films prepared on quartz glass substrates at 200 °C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3Ω cm obtained at 400 °C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

EFFECT OF FLUORINE CONTENT ON THE MORPHOLOGICAL, STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF NANOSTRUCTURED SnO2 FILMS

2007 ◽  
Vol 14 (06) ◽  
pp. 1149-1156 ◽  
Author(s):  
K. K. PURUSHOTHAMAN ◽  
M. DHANASANKAR ◽  
G. MURALIDHARAN
Keyword(s):  
Electrical Properties ◽  
Fluorine Content ◽  
Electrochromic Device ◽  
Fluorine Concentration ◽  
Optical And Electrical Properties ◽  
Transmission Method ◽  
Rutile Structure ◽  
Glass Substrates ◽  
Structural Details ◽  
Scherrer Formula

This paper reports morphological and structural details, optical and electrical properties of fluorine doped SnO 2 thin films prepared via spray pyrolysis route using SnCl 2·2 H 2 O as precursor and methanol as a solvent. The effect of fluorine concentration on the properties of the films is presented and discussed. X-ray diffraction pattern reveals the presence of SnO 2 films in the rutile structure with a preferential growth along the (200) direction. FTIR spectrum confirms the films to be made of SnO 2. EDS was used to estimate the fluorine concentration. SEM reveals the surface of FTO to be made of nanocrystalline particles. The grain size calculated using Debye–Scherrer formula is in the range of 8–34 nm. Film thickness measured using optical transmission method is in the range of 425–538 nm. The sheet resistance was found to decrease with increase in fluorine concentration, to a minimum of 6.35 Ω/□ for 7.5 mol% of NH 4 F , and it showed an increase beyond this concentration. The 2.5 mol% of F doped films gave 95.20% transmission at 704 nm. The calculated reflectivity in the IR region is 93.57% for 7.5 mol% of F doping, and figure of merit for the same film is 0.025(Ω/□)-1 at 550 nm. The total work was optimized by fixing the temperature at 550°C for the usage of Electrochromic Device preparations on FTO coated glass substrates.

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