Structural, morphological, optical and electrical properties of NiO films prepared on Si (100) and glass substrates at different thicknesses

2016 ◽  
Vol 3 (11) ◽  
pp. 116405 ◽  
Author(s):  
Anas A Ahmed ◽  
Naveed Afzal ◽  
Mutharasu Devarajan ◽  
Shanmugan Subramani
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Nio Films

Target to Substrate Distance Dependent Optical and Electrical Properties of Sputtered NiO Films

2012 ◽  
Vol 584 ◽  
pp. 33-36
Author(s):  
Avula Mallikarjuna Reddy ◽  
Akepati Sivasankar Reddy ◽  
Pamanji Sreedhara Reddy
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Substrate Distance ◽  
High Electrical Resistivity ◽  
Dc Reactive Magnetron Sputtering ◽  
Direct Band ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates at various target to substrate distances in the range of 60 to 80 mm by dc reactive magnetron sputtering technique. It was observed that target to substrate distance influenced the morphological, optical and electrical properties of the deposited films. The optical results revealed that the optical transmittance of the films increased with increasing the target to substrate distance upto 70 mm, thereafter it was decreased. The increase in transmittance of the films was due to an increase in size of the grains. The NiO films exhibited an optical transmittance of 60 % and direct band gap of 3.82 eV at target to substrate distance of 70 mm. The films showed high electrical resistivity of 37.3 Ωcm at target to substrate distance of 60 mm and low electrical resistivity of 5.1 Ωcm at target to substrate distance of 70 mm. At high target to substrate distance of 80 mm the electrical resistivity of the film was increased.

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

scholarly journals Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets

1991 ◽  
Vol 14 (3) ◽  
pp. 111-118 ◽  
Author(s):  
C. Geoffroy ◽  
G. Campet ◽  
F. Menil ◽  
J. Portier ◽  
J. Salardenne ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Atomic Ratio ◽  
Optical And Electrical Properties ◽  
Argon Gas ◽  
Glass Substrates ◽  
Different Types ◽  
Spray Technique ◽  
Tin Oxide Films

Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2or SnO2–SnF2mixtures, ceramics obtained by casting either an aqueous SnO2–SnF2slurry or a suspension of tin oxide in molten tin fluoride. The samples were prepared in oxygen-argon gas mixtures in which the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The optical and electrical properties of the obtained thin films have been studied and compared to those of the films obtained by spray technique.

EFFECT OF FLUORINE CONTENT ON THE MORPHOLOGICAL, STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF NANOSTRUCTURED SnO2 FILMS

2007 ◽  
Vol 14 (06) ◽  
pp. 1149-1156 ◽  
Author(s):  
K. K. PURUSHOTHAMAN ◽  
M. DHANASANKAR ◽  
G. MURALIDHARAN
Keyword(s):  
Electrical Properties ◽  
Fluorine Content ◽  
Electrochromic Device ◽  
Fluorine Concentration ◽  
Optical And Electrical Properties ◽  
Transmission Method ◽  
Rutile Structure ◽  
Glass Substrates ◽  
Structural Details ◽  
Scherrer Formula

This paper reports morphological and structural details, optical and electrical properties of fluorine doped SnO 2 thin films prepared via spray pyrolysis route using SnCl 2·2 H 2 O as precursor and methanol as a solvent. The effect of fluorine concentration on the properties of the films is presented and discussed. X-ray diffraction pattern reveals the presence of SnO 2 films in the rutile structure with a preferential growth along the (200) direction. FTIR spectrum confirms the films to be made of SnO 2. EDS was used to estimate the fluorine concentration. SEM reveals the surface of FTO to be made of nanocrystalline particles. The grain size calculated using Debye–Scherrer formula is in the range of 8–34 nm. Film thickness measured using optical transmission method is in the range of 425–538 nm. The sheet resistance was found to decrease with increase in fluorine concentration, to a minimum of 6.35 Ω/□ for 7.5 mol% of NH 4 F , and it showed an increase beyond this concentration. The 2.5 mol% of F doped films gave 95.20% transmission at 704 nm. The calculated reflectivity in the IR region is 93.57% for 7.5 mol% of F doping, and figure of merit for the same film is 0.025(Ω/□)-1 at 550 nm. The total work was optimized by fixing the temperature at 550°C for the usage of Electrochromic Device preparations on FTO coated glass substrates.

Surface Modification of Soda Glass by Recoil Ion Implantation of In2O3.

1985 ◽  
Vol 45 ◽  
Author(s):  
K. C. Cadien ◽  
B. B. Harbison
Keyword(s):  
Surface Modification ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Energy Deposition ◽  
Optical And Electrical Properties ◽  
Deposition Rates ◽  
Ion Energy ◽  
Soda Glass ◽  
Glass Substrates

ABSTRACTRecoil ion implantation of In2O3 into soda glass substrates has been investigated. Increased adhesion results, while the optical and electrical properties are altered. Large energy deposition rates can lead to the reduction of the oxide, thus decreasing visible transmission. Thermal annealing in air results in the recovery of optical and electrical properties. The influence of ion energy and dose on the modification of the glass has been examined.

scholarly journals Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Peijie Lin ◽  
Sile Lin ◽  
Shuying Cheng ◽  
Jing Ma ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Measurement System

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

Effects of Annealing and Different Substrate Materials on Ohmic Contact Property of IGZO Films

2013 ◽  
Vol 423-426 ◽  
pp. 846-851
Author(s):  
Ji Feng Shi
Keyword(s):  
Electrical Properties ◽  
Ohmic Contact ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Contact Property ◽  
Suitable Temperature ◽  
Contact Characteristic ◽  
Amorphous Ingazno ◽  
Better Than

Amorphous InGaZnO(a-IGZO) films were deposited on the glass substrates with Al/Mo/ITO films separately using magnetron sputtering and photograph methods,to form resistance structures between a-IGZO films and Al/Mo/ITO films.These samples were annealed in the air and N2 ambience in a series of temperature separately.The results show that regardless of N2 or air ambience,samples annealing at 250 degrade,IGZO films show a good ohmic contact characteristic withAl/Mo/ITOmaterials.And,IGZO films have a better ohmic contact characteristic with ITO/Al than Mo. The transmittance of the IGZO films annealed is better than the transmittance of samples without annealing.And ,the transmittance of samples annealed is rising with the increasing of annealing temperature. Considering the optical and electrical properties of IGZO films, we suggest that 250 centi degrades is a suitable temperature for annealing.

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