Prepared for GaAs PHEMT Material

2012 ◽  
Vol 619 ◽  
pp. 594-597
Author(s):  
Yan Lei Li ◽  
Rui Xia Yang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Layer Thickness ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optimal Parameters ◽  
Barrier Layer Thickness ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
Channel Thickness ◽  
The Impact

In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.

Stacking of InAs QDs with Different Spacer Layer Thickness on GaAs Substrate by Molecular Beam Epitaxy

2018 ◽  
Vol 24 (8) ◽  
pp. 5574-5577
Author(s):  
S Saravanan
Keyword(s):  
Layer Thickness ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Single Layer ◽  
Areal Density ◽  
Gaas Layer ◽  
Peak Position ◽  
Molecular Beam Epitaxial ◽  
Spacer Layer Thickness ◽  
Spacer Layer

InAs QDs were grown by supplying 2.5 mono-layers (MLs) of InAs at 500 °C in a molecular beam epitaxial (MBE) system. The QDs are approximately 4–6 nm height with an areal density of 3×85 ×1010 cm−2 for single layer QDs. Typical diameter was found to be about 15–25 nm. InAs QDs were stacked with the spacer layer thickness of 5, 10, 15, 25 and 35 nm. For 15 nm of spacer layer thickness the QDs density decreased to 2.62×1010 cm−2 and again increased for 35 nm spacer layer and reached to the value of 3.65×1010 cm−2. The 14 K photoluminescence (PL) spectra of single layer InAs QDs covered by GaAs layer centered at 1079 nm. For the stacking of InAs QDs with spacer layer thickness of 5 and 10 nm another peak appeared around 1100 nm due to size broadening of QDs because of strain propagation to next layer due to less thickness of spacer layer. When the thickness of the spacer layer increased to 35 nm the peak position is around 1073 nm and the intensity increased more than 3 fold when compare to single layer QDs.

InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy

2012 ◽  
Vol 101 (13) ◽  
pp. 133110 ◽  
Author(s):  
T. Sugaya ◽  
A. Takeda ◽  
R. Oshima ◽  
K. Matsubara ◽  
S. Niki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Solar Cells ◽  
Spacer Layer

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

2012 ◽  
Vol 111 (7) ◽  
pp. 074305 ◽  
Author(s):  
Yasushi Shoji ◽  
Kohei Narahara ◽  
Hideharu Tanaka ◽  
Takashi Kita ◽  
Katsuhiro Akimoto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Layer Thickness ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Spacer Layer Thickness ◽  
Spacer Layer
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