Electrical Conductivity of Nanodimensional Polyaniline Particles in Nanoporous Dielectric Matrix of MIL-101

2013 ◽  
Vol 699 ◽  
pp. 238-244
Author(s):  
A.I. Romanenko ◽  
D.N. Dybtsev ◽  
V.P. Fedin ◽  
S.B. Aliev ◽  
O.B. Anikeeva ◽  
...  

We investigated an electrical conductivity of aniline polymerized inside nanopores of chromium terephthalate dielectric matrix MIL-101. We found that temperature dependences of conductivity (T) are described by the fluctuation-induced tunneling model, which means that the main contribution to a net conductivity is caused by contacts between particles of the polyaniline. We also found that the nanoporous matrix affects the composite conductivity via the size reduction of the conducting polyaniline phase encapsulated in the pores. Dependence of conductivity from a current was thoroughly investigated. This dependence is resulted from a reduction of energy gap for current carriers which is, in turn, induced by an increasing electric field applied.

2013 ◽  
Vol 711 ◽  
pp. 8-13
Author(s):  
A.I. Romanenko ◽  
K.M. Limaev ◽  
D.N. Dybtsev ◽  
V.P. Fedin ◽  
S.B. Aliev ◽  
...  

We investigated current-voltage (I-V) characteristics of bulk polyaniline and aniline polymerized inside nanopores of chromium terephthalate dielectric matrix MIL-101. The temperature dependence of electrical conductivity σ (T) of these materials are described by the fluctuation-induced tunneling model (FIT), which means that the main contribution to a net conductivity is caused by contacts between particles of the polyaniline. The comparison of I-V for these two types of materials shown that I-V characteristics of bulk polyaniline are described by the quasi-1D VRH model while for aniline polymerized inside nanopores of chromium terephthalate dielectric matrix MIL-101 by extended FIT model.


2017 ◽  
Vol 31 (22) ◽  
pp. 1750158 ◽  
Author(s):  
Raad Chegel ◽  
Azra Feyzi ◽  
Rostam Moradian

The electronic structures, densities of state and electrical and optical conductivities of monolayer and bilayer silicene sheets are investigated using tight-binding approximation and Green’s function method. We found that applying the electric field on doped bilayer silicene leads to band structure modification. For AA-stacked bilayer silicene, applying and increasing the bias [Formula: see text] does not create the energy gap but for AB-stacked bilayer, a small bias [Formula: see text] is enough to create an energy gap. It is shown that the electrical conductivity depends on temperature, doping and electric field. In pristine and doped AA- and AB-stacked bilayers, electrical conductivity increases (decreases) linearly with [Formula: see text] at low (high) temperature and decreases by increasing the doping onsite energy [Formula: see text] at all [Formula: see text] ranges. The effects of temperature on the conductivity increase with the increase of electric field. It is found that the electrical conductivity depends on the amount of interlayer hopping integral [Formula: see text]. For the case of AA-stacking, there are three steps in optical conductivity at energies [Formula: see text] and [Formula: see text] for [Formula: see text] and [Formula: see text]. For the case of AB-stacking the optical conductivity has a step at [Formula: see text] similar to monolayer sheet and some steps at energies [Formula: see text].


Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 580 ◽  
Author(s):  
Krystian Mistewicz ◽  
Marian Nowak ◽  
Danuta Stróż

A ferroelectric-photovoltaic effect in nanowires of antimony sulfoiodide (SbSI) is presented for the first time. Sonochemically prepared SbSI nanowires have been characterized using high-resolution transmission electron microscopy (HRTEM) and optical diffuse reflection spectroscopy (DRS). The temperature dependences of electrical properties of the fabricated SbSI nanowires have been investigated too. The indirect forbidden energy gap EgIf = 1.862 (1) eV and Curie temperature TC = 291 (2) K of SbSI nanowires have been determined. Aligned SbSI nanowires have been deposited in an electric field between Pt electrodes on alumina substrate. The photoelectrical response of such a prepared ferroelectric-photovoltaic (FE-PV) device can be switched using a poling electric field and depends on light intensity. The photovoltage, generated under λ = 488 nm illumination of Popt = 127 mW/cm2 optical power density, has reached UOC = 0.119 (2) V. The presented SbSI FE-PV device is promising for solar energy harvesting as well as for application in non-volatile memories based on the photovoltaic effect.


2019 ◽  
Vol 50 (3) ◽  
pp. 333-345 ◽  
Author(s):  
Danmei Sun ◽  
Meixuan Chen ◽  
Symon Podilchak ◽  
Apostolos Georgiadis ◽  
Qassim S Abdullahi ◽  
...  

Smart and interactive textiles have been attracted great attention in recent years. This research explored three different techniques and processes in developing textile-based conductive coils that are able to embed in a garment layer. Coils made through embroidery and screen printing have good dimensional stability, although the resistance of screen printed coil is too high due to the low conductivity of the print ink. Laser cut coil provided the best electrical conductivity; however, the disadvantage of this method is that it is very difficult to keep the completed coil to the predetermined shape and dimension. The tested results show that an electromagnetic field has been generated between the textile-based conductive coil and an external coil that is directly powered by electricity. The magnetic field and electric field worked simultaneously to complete the wireless charging process.


1973 ◽  
Vol 51 (24) ◽  
pp. 2604-2611 ◽  
Author(s):  
H. E. Wilhelm

Based on the Lenard–Balescu equation, the interaction integral for the intercomponent momentum transfer in a two-component, collisionless plasma is evaluated in closed form. The distribution functions of the electrons and ions are represented in the form of nonisothermal, displaced Max wellians corresponding to the 5-moment approximation. As an application, the transport of electrical current in an electric field is discussed for infrasonic up to sonic electron–ion drift velocities.


Author(s):  
Л.С. Камзина ◽  
G. Li

The temperature dependences of the dielectric parameters were studied, as well as the changes in the dielectric constant with time in ceramic 33PbYb1 / 2Nb1 / 2O3-22PbZrO3-45 PbTiO3 samples in electric fields (0 <E <8 kV / cm). It is shown that in the phase existing below the temperature of the morphotropic phase transition, in addition to the rhombohedral and tetragonal phases, a small fraction of the relaxor pseudocubic phase is present. It was found that, unlike other relaxors, the dielectric constant practically does not change with time when an electric field is applied in the phase below the temperature of the morphotropic phase transition. Possible reasons for this behavior are discussed.


Author(s):  
Ч.И. Абилов ◽  
М.Ш. Гасанова ◽  
Н.Т. Гусейнова ◽  
Э.К. Касумова

The results of studying the temperature dependences of electrical conductivity, thermoelectric coefficient, Hall mobility of charge carriers, total and electronic thermal conductivity, as well as phonon thermal resistance of alloys of (CuInSe2)1-x(In2Te3)x solid solutions at x=0.005 and 0.0075 are presented. The values ​​of these parameters for certain temperatures were used to calculate the values ​​of the thermoelectric figure of merit of the indicated compositions. It turned out that as the temperature rises, the thermoelectric figure of merit tends to grow strongly, from which it can be concluded that these materials can be used in the manufacture of thermoelements.


Author(s):  
Н.П. Степанов ◽  
В.Ю. Наливкин ◽  
А.К. Гильфанов ◽  
А.А. Калашников ◽  
Е.Н. Трубицына

Solid solutions Bi2Te3-Sb2Te3 continue to be the subject of numerous and versatile experimental studies due to their practical importance for thermoelectric materials science. In this regard, the problem of studying the regularities of changes in the state of the electronic system of these semiconductors from composition and temperature remains urgent. This paper presents the results of studying the temperature dependences of the magnetic susceptibility of Bi2Te3-Sb2Te3 crystals containing 10, 25, 40, 50, 60 mol. % Sb2Te3. The correlation of the behavior of the temperature dependences of the magnetic susceptibility and electrical conductivity is analyzed.


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