VO2 Thin Films Deposited on ZnO Buffer Layer

2013 ◽  
Vol 734-737 ◽  
pp. 2568-2571
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to ‘‘smart windows’’ of high total energy efficiency in architectures or automobiles. .

Vanadium Dioxide Thin Films Deposited on ZnO Buffer Layer for Smart Thermochromic Glazing of Windows

2013 ◽  
Vol 361-363 ◽  
pp. 370-373 ◽  
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to smart windows of high total energy efficiency in architectures or automobiles.

Dependence of Film Thickness on Properties of Al Doped ZnO Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2305-2311
Author(s):  
Ying Ge Yang ◽  
Dong Mei Zeng ◽  
Hai Zhou ◽  
Wen Ran Feng ◽  
Shan Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electrical Parameter ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Thickness Effect ◽  
Visible Range ◽  
Glass Substrates ◽  
Doped Zno

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

2010 ◽  
Vol 256 (22) ◽  
pp. 6834-6837 ◽  
Author(s):  
Te-Wei Chiu ◽  
Kazuhiko Tonooka ◽  
Naoto Kikuchi
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Glass Substrates ◽  
Zno Buffer Layer ◽  
Vo2 Thin Films

Effect of Substrate Temperature on the Opto-Electrical Propertites of Ti Doped ITO Films Deposited by RF Magnetron Sputtering

2012 ◽  
Vol 602-604 ◽  
pp. 1399-1403
Author(s):  
Rui Xin Ma ◽  
Shi Na Li ◽  
Guo Quan Suo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Absorption Edge ◽  
Blue Shift ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Visible Wavelengths

Ti doped ITO (ITO:Ti) thin films were fabricated on glass substrates by RF magnetron sputtering using only one piece of ITO:Ti ceramic target at different substrate temperature (Ts). The effect of substrate temperature on structural, electrical, and optical properties of the films was investigated. It is confirmed that the resistivity of the films decreases with the increase of Ts till the minimum value of 2.5×10-4 Ω•cm and the transmittance in visible wavelengths is higher than 90%. "Blue shift" and "red shift" of UV absorption edge of the film were observed when Ts200 °CHeaders and footers

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates

2013 ◽  
Vol 795 ◽  
pp. 403-406 ◽  
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohd Hanafi Ani ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage

Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

Vanadium Dioxide Thin Films Deposited on TiO2 Buffer Layer for Smart Thermochromic Glazing of Windows

2011 ◽  
Vol 374-377 ◽  
pp. 1365-1368 ◽  
Author(s):  
Jian Wei Ma ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Buffer Layer ◽  
Quartz Glass ◽  
Vanadium Dioxide ◽  
Near Infrared ◽  
Rf Magnetron Sputtering ◽  
Infrared Region ◽  
Glass Substrates ◽  
Different Color

Vanadium dioxide (VO2) films were prepared on quartz glass and TiO2-coated quartz glass substrates by reactive RF-magnetron sputtering. The VO2 thin film with film thickness of 50 nm deposited on quartz glass substrates showed two kinds of regions with different color visible to the naked eye, i.e., the earth yellow region and the cyan region. Both XRD and Raman spectroscopy showed that the different color regions of the films had the different crystallinity quality and phase composition. Whereas, the VO2 thin films with film thickness of 50 nm fabricated on TiO2-coated quartz glass (with TiO2 film thickness of 50 nm) had uniform color and exhibited a larger change in transmittance at near infrared region than the VO2 thin films deposited on quartz glass did. A TiO2 buffer layer improved the crystallinity and uniformity of the VO2 film. Such very thin VO2 films with a TiO2 buffer layer have high potential for practical application in smart thermal glazing of windows.

Growth of Cu(In1-xAlx)Se2 Thin Films by Atmospheric Pressure Selenization of Sputtered Precursors

2007 ◽  
Vol 124-126 ◽  
pp. 931-934 ◽  
Author(s):  
Badrul Munir ◽  
Rachmat Adhi Wibowo ◽  
Eun Soo Lee ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Corning Glass ◽  
Stage Process ◽  
Elemental Layer ◽  
Selenization Process

Cu(In1-xAlx)Se2 films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. All of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se2 thin films for solar cells applications.

Effects of Substrate Temperature on Structure and Properties of Al-F Co-doped ZnO Thin Films

2012 ◽  
Vol 602-604 ◽  
pp. 1404-1408
Author(s):  
Rui Xin Ma ◽  
Shi Na Li ◽  
Guo Quan Suo
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Optical And Electrical Properties ◽  
Structure And Properties ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Uv Visible ◽  
Influence Of Substrate ◽  
Co Doped

ZnO:(Al, F) thin films on glass substrates have been prepared by RF magnetron sputtering. The influence of substrate temperature on the microstructure,optical and electrical properties of ZnO(Al,F) films have been studied. The effects of substrate temperature on structure and optical and electronical properties of ZnO:Al:F thin films were investigated by XRD,SEM,UV-Visible spectrophotometry and four-point proble method.Experimental results indicate that substrate temperature affects the structure and properties of the thin films considerably.The lowest resistivity obtained in this study was 9.95×10-3 Ω∙cm for the film with average visible transmittance of 90% which was deposited at the substrate temperature of 300°C.

Sign in / Sign up

Export Citation Format

Share Document