Growth of Cu(In1-xAlx)Se2 Thin Films by Atmospheric Pressure Selenization of Sputtered Precursors

2007 ◽  
Vol 124-126 ◽  
pp. 931-934 ◽  
Author(s):  
Badrul Munir ◽  
Rachmat Adhi Wibowo ◽  
Eun Soo Lee ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Corning Glass ◽  
Stage Process ◽  
Elemental Layer ◽  
Selenization Process

Cu(In1-xAlx)Se2 films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. All of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se2 thin films for solar cells applications.

scholarly journals NO2 Sensing Properties of WO3 Thin Films Deposited by Rf-Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Savita Sharma ◽  
Monika Tomar ◽  
Nitin K. Puri ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Sensing ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sensing Properties ◽  
Glass Substrates ◽  
Corning Glass ◽  
Interdigital Electrodes ◽  
Wo3 Thin Films

Tungsten trioxide (WO3) thin films were deposited by Rf-magnetron sputtering onto Pt interdigital electrodes fabricated on corning glass substrates. NO2 gas sensing properties of the prepared WO3 thin films were investigated by incorporation of catalysts (Sn, Zn, and Pt) in the form of nanoclusters. The structural and optical properties of the deposited WO3 thin films have been studied by X-ray diffraction (XRD) and UV-Visible spectroscopy, respectively. The gas sensing characteristics of all the prepared sensor structures were studied towards 5 ppm of NO2 gas. The maximum sensing response of about 238 was observed for WO3 film having Sn catalyst at a comparatively lower operating temperature of 200°C. The possible sensing mechanism has been highlighted to support the obtained results.

Vanadium Dioxide Thin Films Deposited on ZnO Buffer Layer for Smart Thermochromic Glazing of Windows

2013 ◽  
Vol 361-363 ◽  
pp. 370-373 ◽  
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to smart windows of high total energy efficiency in architectures or automobiles.

VO2 Thin Films Deposited on ZnO Buffer Layer

2013 ◽  
Vol 734-737 ◽  
pp. 2568-2571
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to ‘‘smart windows’’ of high total energy efficiency in architectures or automobiles. .

Growth and Properties of Stannite-Quaternary Cu2ZnSnSe4 Thin Films Prepared by Selenization of Sputtered Binary Compound Precursors

2007 ◽  
Vol 29-30 ◽  
pp. 79-82 ◽  
Author(s):  
Rachmat Adhi Wibowo ◽  
W.S. Kim ◽  
Badrul Munir ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Structural Characteristics ◽  
Film Surface ◽  
Secondary Phase ◽  
Binary Compound ◽  
Stoichiometric Ratio ◽  
Sputtering Deposition ◽  
Corning Glass ◽  
Deposited Films ◽  
Selenization Process

Cu2ZnSnSe4 (CZTSe) thin films were grown on Corning glass 1737 by sequential methods of sputtering deposition and selenization process. As-grown films showed that elemental Cu, Zn, and Sn were in the nearly CZTSe stoichiometric ratio with Se-deficiency as detected by Energy Dispersive X-Ray spectrometry (EDX). In order to attain film stoichiometry, as-deposited films were subjected to selenization process in tube furnace under Ar ambient at different selenization temperatures for 10-60 min. It was found that compositions of binary compound in the sputtering target as well as selenization are critical for the growth of the CZTSe films. The structural characteristics of the selenized CZTSe films revealed a highly oriented stannite CZTSe phase with (112), (220/204) and (312/116) growth orientations and a CuSe secondary phase. By using 0.5% KCN solution, CuSe secondary phase could be totally etched from the CZTSe film surface.

Dependence of Film Thickness on Properties of Al Doped ZnO Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2305-2311
Author(s):  
Ying Ge Yang ◽  
Dong Mei Zeng ◽  
Hai Zhou ◽  
Wen Ran Feng ◽  
Shan Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electrical Parameter ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Thickness Effect ◽  
Visible Range ◽  
Glass Substrates ◽  
Doped Zno

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.

Characterizations and Process Parameters of Titanium Dioxide Thin Film by RF Sputtering

2013 ◽  
Vol 22 ◽  
pp. 9-21 ◽  
Author(s):  
Chii Rong Yang ◽  
Tun Ping Teng ◽  
Yun Yu Yeh
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Flow Rate ◽  
Gas Flow ◽  
Deposition Time ◽  
Photocatalytic Performance ◽  
Oxidation Process ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Oxygen Ratio

In this study, we successfully combined RF magnetron sputtering of a pure Ti metal target and one-stage oxidation process with a wider oxygen ratio (10%-90%) and total sputtering flow rate (16-24 sccm) to produce TiO2thin films on a glass substrate. The crystallization, morphology, roughness, and thickness of the thin films were examined using XRD, HR-FESEM, AFM, and a profilometer. Subsequently, the photocatalytic performance was examined using a spectrometer and video tensiometer. The experimental results show that the TiO2thin films with a majority of anatase and higher roughness exhibit superior photocatalytic performance; the total sputtering gas flow rate of 18 sccm and oxygen content at 10% is the optimal option. Finally, an empirical formula to correlate the film thickness with deposition time was conducted for the sputtering flow rate of 18 sccm and the oxygen content of 10%.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

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