Designing Apparatus for Highly Precise Measurement of Electrical Conductivity and Seebeck Coefficient from 85 K to 1200 K

2013 ◽  
Vol 740 ◽  
pp. 426-432 ◽  
Author(s):  
Sopon Budngam ◽  
Aree Wichainchai ◽  
Saichol Pimmongkol ◽  
Udom Tipparach
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Electrical Resistance ◽  
Precise Measurement ◽  
Inert Gas ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gas System

We describe the development of apparatus for measuring of electrical conductivity and Seebeck coefficient with high precision from 85 K to 1,200 K. Electrical resistance was measured by means of four-point probe method as a function of temperature. The temperature below 400 K was measured by using type T thermocouple in vacuum system was used and from 400 to 1,200 was measured by using Type S was applied for temperature between 400 and 1200 Kelvin in an inert gas system. With the dimensions of the specimen, the electrical resistivity (ρT) can be obtained in the unit of microohm-centimeter (μΩ-cm) and be written in polynomial, ρT=-0.3191+6.8×10-3T-6.0×10-7 T2+8.0×10-10T3. The electrical conductivity can be obtained by taking inversion of the electrical resistivity. Seebeck coefficient (αT ) can be calculated in microvolt per Kelvin as follows: αT=1.9653-1.49×10-2T+9.0×10-5T2-2.0×10-7T3+2.0×10-10T4-1.0×10-13T5+3.0×10-17T6 , when T is temperature in K. The Seebeck coefficient data was compared with X-ray diffraction (XRD) and X-ray fluorescence (XRF) of the specimen. The result showed that our developrd apparatus yields the same as standard method when copper with purity greater than 99 percent was employed.

Thermoelectric Performance of Glass Microsphere Dispersed Bi-Sb Composites at Low Temperature

2013 ◽  
Vol 743-744 ◽  
pp. 120-125
Author(s):  
Zhen Chen ◽  
Ye Mao Han ◽  
Min Zhou ◽  
Rong Jin Huang ◽  
Yuan Zhou ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Sem Analysis ◽  
Glass Microsphere ◽  
Thermoelectric Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Measurement Results

In the present study, the glass microsphere dispersed Bi-Sb thermoelectric materials have been fabricated through mechanical alloying followed by pressureless sintering. The phase composition and the microstructure were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis. Electrical conductivity, Seebeck coefficient and thermal conductivity were measured in the temperature range of 77~300 K. The ZT values were calculated according to the measurement results. The results showed that the electrical conductivity, Seebeck coefficient and thermal conductivity decreased by adding glass microsphere into Bi-Sb thermoelectric materials. However, the optimum ZT value of 0.24 was obtained at 260 K, which was increased 10% than that of the Bi-Sb matrix. So it is confirmed that the thermoelectric performance of Bi-Sb-based materials can be improved by adding moderate glass microspheres.

Thermoelectric properties of InxPbxCo4Sb12 prepared by HPHT

2016 ◽  
Vol 09 (01) ◽  
pp. 1650008 ◽  
Author(s):  
Le Deng ◽  
Li Bin Wang ◽  
Jie Ming Qin ◽  
Xiao Peng Jia ◽  
Hong An Ma
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Microprobe Analysis ◽  
Electron Microprobe Analysis ◽  
Substantial Reduction ◽  
X Ray Diffraction ◽  
X Ray

We prepared InxPbxCo4Sb[Formula: see text] by high-pressure and high-temperature (HPHT) method. Samples were characterized by X-ray diffraction (XRD), electron microprobe analysis and thermoelectric properties measurements. The Seebeck coefficient, electrical resistivity and thermal conductivity of InxPbxCo4Sb[Formula: see text] samples were all performed in the temperature range of 323–723[Formula: see text]K. With the increasing synthetic pressure, the Seebeck coefficient of In[Formula: see text]Pb[Formula: see text]Co4Sb[Formula: see text] samples, which synthesized between 1.5 GPa–2.3 GPa, showed an obvious increase while the thermal conductivity exhibited a substantial reduction.

ELECTRICAL CONDUCTING AND THERMOELECTRIC PROPERTIES OF Ba4Na2Nb10O30−Ba3NaLaNb10O30 SYSTEM

1990 ◽  
Vol 04 (10) ◽  
pp. 681-688
Author(s):  
MASAYUKI TSUKIOKA ◽  
YASUO TANOKURA ◽  
MASAZI SHIMAZU ◽  
SHINICHIRO KUROIWA ◽  
SADAO TSUTSUMI
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Samples ◽  
Electrical Conducting ◽  
P Type

Ceramic samples of BNN-BNLN ( Ba 4 Na 2 Nb 10 O 30− Ba 3 NaLaNb 10 O 30) system were prepared in flowing N 2 gas at about 1410°C, which has been confirmed to have continuous solid solutions over the whole range of BNN-BNLN system by X-ray diffraction measurement. Electrical resistivity and Seebeck coefficient measurements were carried out at temperatures from 77 K to 773 K and from 60 K to 200 K, respectively for the samples of different composition belonging to the BNN-BNLN system. These experiments revealed that all these materials were extrinsic semiconductors and change from p-type semiconductors to n-type during the process of rising temperature.

scholarly journals Thermoelectric Lead Telluride with ZnO Nanoparticles

2015 ◽  
Vol 16 (1) ◽  
pp. 62-67
Author(s):  
O. M. Matkivsky
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Lead Telluride ◽  
Thermoelectric Figure Of Merit ◽  
X Ray Diffraction ◽  
Thermoelectric Figure ◽  
X Ray ◽  
Zno Powder

An X-ray diffraction structural study and measurement of Seebeck coefficient (S), the electrical conductivity (σ) and thermal conductivity (χ) for Lead Telluride with nanoinclusions of ZnO. The calculated value of the specific thermoelectric power (S2σ) and thermoelectric figure of merit (ZT). It was established that the addition of ZnO powder Nanodispersed diameter grains (40-60) nm PbTe reduces the thermal conductivity of the material, and at 0.5 wt.% ZnO to an increase of lead telluride thermoelectric figure of merit to ZT≈1,3.

Effect of Selenium on Structure and Electrical Property for Bi0.4Sb1.6Se3xTe3(1-x) Novel Hexagonal Rods

2013 ◽  
Vol 756 ◽  
pp. 80-84
Author(s):  
Arej Kadhim ◽  
Arshad Hmood ◽  
Abu Hassan Haslan
Keyword(s):  
Electron Microscopy ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Rhombohedral Phase ◽  
Orthorhombic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Maximum Power Factor ◽  
Microscopy Images ◽  
Scanning Electron

Novel hexagonal rods of Bi0.4Sb1.6Se3xTe3(1-x) (0.0≤x≤1.0) were synthesized successfully through solid-state microwave synthesis. These hexagonal rods were explored using field emission scanning electron microscopy images. The X-ray diffraction results indicate that the powders (0.0≤x≤0.8) can be indexed as the rhombohedral phase, whereas the sample with x=1.0 has an orthorhombic phase structure. The electrical conductivity gradually decreases as Se increased, resulting in an increase in the Seebeck coefficient. Ascribing to the increased Seebeck coefficient for the sample with x=0.8, the maximum power factor is 7.47 mW/mK2 at 373 K.

Influence of Cu Diffusion on Electrical Transport Properties of Bi0.5Sb1.5Te3

2013 ◽  
Vol 743-744 ◽  
pp. 70-75 ◽  
Author(s):  
Song Chen ◽  
Xin Wang ◽  
Zhi Gang Zou ◽  
Ke Feng Cai
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Electrical Transport ◽  
Impurity Phase ◽  
X Ray Diffraction ◽  
Electrical Transport Properties ◽  
Bulk Materials ◽  
Measurement Temperature ◽  
X Ray ◽  
Before And After

Bi0.5Sb1.5Te3 nanoplates from gas induced reduction (GIR) strategy were hot-pressed into bulk materials for thermoelectric properties investigation. During the electrical conductivity and Seebeck coefficient measurements, we found that the Cu from Cu electrodes diffused into samples when the measurement temperature was above 600 K. The phase composition and fracture surface of the samples before and after Cu diffusion were examined by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDS). We found that the Cu diffusion resulted in the composition deviation and formation of impurity phase, Cu1.8Te. When the electrical conductivity and Seebeck coefficient of the samples were measured again but below 600 K, the samples showed different electrical transport behavior and had enhanced power factors.

Preparation and Characterization of Electrodeposited CuxBi2Te3 Thermoelectric Films

2014 ◽  
Vol 787 ◽  
pp. 205-209
Author(s):  
Yue Chao Hu ◽  
Zhi Gang Zou ◽  
Ke Feng Cai
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
Electro Deposition ◽  
X Ray ◽  
Glass Substrates ◽  
Higher Power

CuxBi2Te3films were prepared by chronopotentiometry electro-deposition on indium tin oxide (ITO)-coated glass substrates from an aqueous acidic electrolyte at room temperature. The films were deposited at the same current density but in electrolyte with different Cu2+concentrations: 0.1, 0.25, 0.5, 0.75 or 1mM. The phase composition and morphology of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and field emission scanning electron microscope, respectively. The electrical conductivity and Seebeck coefficient of the CuxBi2Te3films were measured after being transferred onto a non-conductive rubberized fabric support. All the films showed n-type conduction with Seebeck coefficient in the range of-63 to-84μV/K, and the electrical conductivity in the range of 90 to 185S/cm. The film deposited from an electrolyte with 0.5mM Cu2+showed higher power factor ~130 μW/K-2m-1.

Characterization of Al and Al-Cr-Al Thin Films

1986 ◽  
Vol 77 ◽  
Author(s):  
O. F. De Lima ◽  
Y. Lepetre ◽  
M. B. Brodsky
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
The Individual ◽  
Perfect Continuity ◽  
Substrate Temperatures

ABSTRACTTEM, X-ray diffraction, and electrical resistivity measurements were used to study the microstructure and the growth of AI-Cr-AI film sandwiches, where the individual Al layers were 300 Å thick and the Cr thickness was varied between 0–10 atomic layers. The base vacuum was around 1.0 × 10−10 torr, substrate temperatures varied between 100–350 °C, and evaporation rates were 3Å/s for Al and ∼0.1 – 0.2 Å/s for Cr. All Al films had a strong (111) texture and showed a non-percolative island structure at 350 °C. The films became connected at lower substrate temperatures, reaching perfect continuity at 100°C. However, electrical conductivity is achieved also for the films deposited at 350 °C when one or more atomic layers of Cr are sandwiched between the Al layers. Results for the superconducting critical temperature and resistivity are discussed in terms of Cr diffusion into Al and the film size effect.

Synthesis and thermoelectric power factor of LSCO perovskites

2005 ◽  
Vol 886 ◽  
Author(s):  
Julio E. Rodriguez
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Room Temperature ◽  
Morphological Properties ◽  
Measured Temperature ◽  
X Ray Diffraction ◽  
Thermoelectric Power Factor ◽  
X Ray

ABSTRACTMeasurements of Seebeck coefficient, S(T) and electrical resistivity, ρ(T) on polycrystalline La2−xSrxCuO4+d(LSCO) (0<x≤0.2) samples are reported. The Seebeck coefficient is positive in whole measured temperature range (77K and 300K) and it decreases with Sr content. At room temperature S(T) changes from 400 μ/K for the samples with the lowest levels of Sr to 30 μV/K for the samples with the highest Sr levels. The behavior of S(T) fits to Heikes model, which describes the behavior of Seebeck coefficient in systems where the correlated hopping is present. With the Sr content, the electrical resistivity changes its behavior from semiconducting to metallic and it took values from 2.4 to 10−3Ωcm. From S(T) and rho(T) measurements the thermoelectric power factor, PF was obtained. The maximum values for PF were about 5 μW/K2cm in the samples where x= 0.03, which are comparable to the typical values for conventional thermoelectric semiconductors. The structural and morphological properties of the samples were studied by x-ray diffraction analysis and Scanning Electron Microscopy (SEM) respectively. The behavior of transport properties opens de possibility of considering this family of perovskite-compounds as a thermoelectric material which works below room temperature.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

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