Synthesis of High Quality Graphene Films by Atmospheric Pressure CVD and their Application in Laser Q-Switching

2013 ◽  
Vol 747 ◽  
pp. 514-517 ◽  
Author(s):  
Mei Qi ◽  
Yu Ping Zhang ◽  
Wei Long Li ◽  
Man Jiang ◽  
Xin Liang Zheng ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Atmospheric Pressure ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Single Pulse ◽  
High Quality ◽  
Synthesis Conditions ◽  
Graphene Films ◽  
Q Switching ◽  
Cu Foil

Synthesis of high quality graphene films on Cu foil by atmospheric pressure chemical vapor deposition (APCVD) was studied systematically. Acetylene and Cu foil were chosen as the carbon source and the catalyst (or the support) for the synthesis of graphene, respectively. The effect of several synthesized parameters on the structure of graphene films were investigated in detail. The controlled synthesis of graphene and the optimal synthesis conditions were derived. The prepared graphene film was transferred to a coated mirror as a Q-switching saturable absorber used in a Nd:YAG laser. The obtained shortest laser pulse width with single-pulse energy of 8.18 μJ was 242.8 ns. The results indicate that graphene film synthesized by APCVD can be excellently used as saturable absorber material in ultrashort pulse laser.

ANTIPHASE DOMAIN FREE EPITAXIAL GROWTH OF GaAs ON (100)Ge

1985 ◽  
Vol 56 ◽  
Author(s):  
Y. Shinoda ◽  
Y. Ohmachi
Keyword(s):  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Antiphase Domain ◽  
Epitaxial Layers ◽  
High Quality ◽  
Thermal Etching ◽  
Domain Structures ◽  
Homoepitaxial Layers

AbstractHigh-quality single domain GaAs epitaxial layers were successfully grown on (100)Ge substrates. Growth was carried out using conventional metalorganic chemical vapor deposition at atmospheric pressure. Antiphase domain free GaAs epitaxial layers were obtained by thermal etching of the Ge surface just prior to growth. Mosaic surface morphology and antiphase boundaries characteristic of domain structures were completely absent in epi-layers following thermal etching. Photoluminescence revealed that domain free epi-layers exhibited characteristics comparable to those of GaAs homoepitaxial layers.

scholarly journals Chemical vapor deposition of partially oxidized graphene

RSC Advances ◽  
2017 ◽  
Vol 7 (51) ◽  
pp. 32209-32215 ◽  
Author(s):  
Zafer Mutlu ◽  
Isaac Ruiz ◽  
Ryan J. Wu ◽  
Robert Ionescu ◽  
Sina Shahrezaei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Copper Foils ◽  
Graphene Films

Mutlu et al. reported on chemical vapor deposition (CVD) of partially oxidized graphene films on copper foils under near-atmospheric pressure.

Process Optimization for Synthesis of High-Quality Graphene Films by Low-Pressure Chemical Vapor Deposition

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FD21 ◽  
Author(s):  
Dongheon Lee ◽  
Kihwan Lee ◽  
Saebyuk Jeong ◽  
Juhyun Lee ◽  
Bosik Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Optimization ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Graphene Films ◽  
Pressure Chemical

scholarly journals High-quality AlN films grown on chemical vapor-deposited graphene films

2016 ◽  
Vol 60 ◽  
pp. 01004
Author(s):  
Bin-Hao Chen ◽  
Hsiu-Hao Hsu ◽  
David T.W. Lin
Keyword(s):  
Chemical Vapor ◽  
High Quality ◽  
Graphene Films ◽  
Chemical Vapor Deposited

Graphene Directly Growth on Non-Metal Substrate from Amorphous Carbon Nano Films Without Transfer and Its Application in Photodetector

2021 ◽  
Vol 13 (4) ◽  
pp. 574-582
Author(s):  
Kun Xu ◽  
Pei Ding ◽  
Yan Li ◽  
Leiming Chen ◽  
Junwei Xu ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Graphene Film ◽  
Copper Film ◽  
Chemical Vapor ◽  
Metal Substrate ◽  
Protective Atmosphere ◽  
Process Window ◽  
Monolayer Graphene ◽  
Graphene Films

A layer of nano amorphous carbon was fabricated on the target substrate by precisely controlled magnetron sputtering, and then a layer of copper film was fabricated on the amorphous carbon. By using a vertical cold wall chemical vapor deposition system under protective atmosphere, the carbon atoms at high temperature was catalyzed by copper to form graphene films. The amorphous carbon nano thin film was converted into monolayer graphene on a SiO2 substrate directly. The experimental results show that the graphene film has high crystal quality and conductivity. Compared with other methods, the process is simple and the process window is wider. By virtue of this technique, a graphene-Si photodetector was also demonstrated. The photoelectric response and frequency characteristics have been studied which shows good device characteristics.

Synthesis of high-quality graphene films on nickel foils by rapid thermal chemical vapor deposition

Carbon ◽  
2012 ◽  
Vol 50 (2) ◽  
pp. 551-556 ◽  
Author(s):  
L. Huang ◽  
Q.H. Chang ◽  
G.L. Guo ◽  
Y. Liu ◽  
Y.Q. Xie ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition ◽  
Graphene Films
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