Study of Annealed Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 695-699 ◽  
Author(s):  
M. Sobri ◽  
A. Shuhaimi ◽  
K.M. Hakim ◽  
M.H. Mamat ◽  
S. Najwa ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
High Annealing Temperature ◽  
High Annealing ◽  
Deposited Film ◽  
Post Deposition ◽  
Ito Films

Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on glass and silicon (111) substrates by RF magnetron sputtering using a nickel target and ITO (In-Sn, 90%-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties on ITO films was studied. We found the appearance of (411) and (622) peaks in addition to (400) and (222) major peaks, which indicates an improvement of the film crystallinity at high annealing temperature of 650°C. The samples show higher transmittance of more than 90% at 460 nm after annealing. In addition, increasing the annealing temperatures also improve the film electrical properties. The resistivity decreases to 6.67×10-6Ωcm when annealed at 500°C as opposed to 6.75×10-5Ωcm in as-deposited film.

Indium Tin Oxide Films Grown at Room Temperature by RF-Magnetron Sputtering in Oxygen-Free Environment

2013 ◽  
Vol 200 ◽  
pp. 10-13 ◽  
Author(s):  
Dmitry Kudryashov ◽  
Alexander Gudovskikh ◽  
Kirill Zelentsov
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Argon Pressure ◽  
Sem Images ◽  
Sputtering Power ◽  
Free Environment ◽  
Ito Films

Indium Tin Oxide (ITO) thin films were grown at room temperature (RT) in oxygen-free environment by rf-magnetron sputtering on glass and Si(100)-substrates. The effects of argon pressure, sputtering power and film thickness on the electrical and optical properties of ITO films were investigated. For a 100 nm thick ITO films grown at RT in argon pressure 1.95∙10-3 mbar and sputtering power of 50 W, the transmittance was near 90% at 500 nm and resistivity was 5.4∙10-4 Ohm∙cm. It has been shown that the sputtering power plays an important role in electric properties of ITO films. SEM images of these samples show smooth surface with sharp substrate/ITO interface.

Study of annealed Indium Tin Oxide Films Prepared by RF Reactive Magnetron Sputtering

1995 ◽  
Vol 388 ◽  
Author(s):  
Li-Jian Meng ◽  
A. Maçarico ◽  
R. Martins
Keyword(s):  
Magnetron Sputtering ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Light Trapping ◽  
Film Surface ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Deposited Film ◽  
Ito Films

AbstractTin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). the post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. the resistivity of as-deposited film is about 1.3 х 10-1 Ω*cm and decreases down to 6.9 х 10-3Ω*cm as the annealing temperature is increased up to 500 °C. IN addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Low temperature deposition of Indium tin oxide (ITO) films on plastic substrates

2005 ◽  
Vol 869 ◽  
Author(s):  
Vandana Singh ◽  
B. Saswat ◽  
Satyendra Kumar
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Light Emitting ◽  
Plastic Substrates ◽  
Organic Light ◽  
Temperature Deposition ◽  
Ito Films

AbstractOrganic light emitting diodes (OLEDs) require a transparent conducting oxide (TCO) electrode for injection of charge carriers and the emitted light to come out. In order to exploit the full flexibility of organic semiconductor based large area electronic devices, the deposition of TCO on plastic substrates is essential, which prohibits high temperature processing. Therefore, low temperature deposition of Indium tin oxide (ITO) films is very important for flat panel displays and solar cells. Here we have carried out a systematic study of ITO deposition on plastic substrates using RF magnetron sputtering. For the optimization of structural, electrical and optical properties of ITO, various experiments such as X-ray diffractometer, transmission measurements, sheet resistance and AFM were employed. These properties were investigated as a function of substrate temperature, deposition time and RF power. From these experiments, we obtained a reasonably low sheet resistance (˜ 14;Ω / □) and high transmittance (˜75%) in the visible region on plastic substrates. We also observed that these films are not much affected by atmosphere and does not degrade with time. These ITO films deposited by RF magnetron sputtering on plastic substrates can be use as anode for flexible organic light emitting displays.

Effect of Annealing on Surface of Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Measured by Atomic Force Microscopy (AFM)

2013 ◽  
Vol 832 ◽  
pp. 51-55
Author(s):  
M. Sobri ◽  
A. Shuhaimi ◽  
K.M. Hakim ◽  
M.H. Mamat ◽  
S. Najwa ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Force Microscopy ◽  
Watershed Analysis ◽  
Atomic Force ◽  
Ito Films

Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on silicon (111) substrate by RF magnetron sputtering using a nickel target and metallic alloy target (In-Sn, 90%-10%). The post-deposition annealing has been done for Ni/ITO films in air and the effect of annealing temperature on the surface morphology of ITO films was studied. It has been found that the annealing temperatures increase the film surface roughness in Ni/ITO structure. At annealing temperature of 600°C, AFM analysis reveals the highest root mean square roughness, peak to valley and thickness value of 2.598 nm, 59.115 nm, and 11.358 nm, respectively. Watershed analysis on AFM images show that the numbers of grain boundaries in Ni/ITO are reduced when annealing temperature is increased to higher temperatures.

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Target Surface ◽  
Flow Ratio ◽  
Dc Power ◽  
Alkali Glass ◽  
Oxygen Ratio ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

Characteristics of Indium Tin Oxide Films Deposited by DC and RF Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3364-3369 ◽  
Author(s):  
Wenli Deng ◽  
Taizo Ohgi ◽  
Hitoshi Nejo ◽  
Daisuke Fujita
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Tin Oxide Films

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

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