Effect of Annealing on Surface of Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Measured by Atomic Force Microscopy (AFM)

2013 ◽  
Vol 832 ◽  
pp. 51-55
Author(s):  
M. Sobri ◽  
A. Shuhaimi ◽  
K.M. Hakim ◽  
M.H. Mamat ◽  
S. Najwa ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Force Microscopy ◽  
Watershed Analysis ◽  
Atomic Force ◽  
Ito Films

Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on silicon (111) substrate by RF magnetron sputtering using a nickel target and metallic alloy target (In-Sn, 90%-10%). The post-deposition annealing has been done for Ni/ITO films in air and the effect of annealing temperature on the surface morphology of ITO films was studied. It has been found that the annealing temperatures increase the film surface roughness in Ni/ITO structure. At annealing temperature of 600°C, AFM analysis reveals the highest root mean square roughness, peak to valley and thickness value of 2.598 nm, 59.115 nm, and 11.358 nm, respectively. Watershed analysis on AFM images show that the numbers of grain boundaries in Ni/ITO are reduced when annealing temperature is increased to higher temperatures.

scholarly journals Evaluation of surface roughness and nanostructure of indium tin oxide (ITO) films by atomic force microscopy

Scanning ◽  
2008 ◽  
Vol 30 (3) ◽  
pp. 232-239 ◽  
Author(s):  
G. Kavei ◽  
Y. Zare ◽  
A. Mohammadi Gheidari
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Films

Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 12-16
Author(s):  
S. Najwa ◽  
Ahmad Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Silicon Substrates ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Indium tin oxide (ITO) nanocolumns were successfully deposited on both glass and silicon substrates at different substrate temperature from room temperature to 300°C by radio frequency (RF) magnetron sputtering system using an ITO target. The composition of the ITO target was 90% indium oxide and 10% tin oxide. Structures and morphological properties of ITO nanocolumns were investigated. X-ray diffraction (XRD) measurement revealed that the main preferred orientation was changed from (222) to (400) as the substrate temperature increased. The atomic force microscopy (AFM) reveals that the roughness values were increases as the substrate temperature increases. The cross sectional and top view field emission scanning electron microscopy (FESEM) images show that densely packed nanocolumn arrays were obtained from all the samples.

Study of Annealed Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 695-699 ◽  
Author(s):  
M. Sobri ◽  
A. Shuhaimi ◽  
K.M. Hakim ◽  
M.H. Mamat ◽  
S. Najwa ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
High Annealing Temperature ◽  
High Annealing ◽  
Deposited Film ◽  
Post Deposition ◽  
Ito Films

Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on glass and silicon (111) substrates by RF magnetron sputtering using a nickel target and ITO (In-Sn, 90%-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties on ITO films was studied. We found the appearance of (411) and (622) peaks in addition to (400) and (222) major peaks, which indicates an improvement of the film crystallinity at high annealing temperature of 650°C. The samples show higher transmittance of more than 90% at 460 nm after annealing. In addition, increasing the annealing temperatures also improve the film electrical properties. The resistivity decreases to 6.67×10-6Ωcm when annealed at 500°C as opposed to 6.75×10-5Ωcm in as-deposited film.

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing

2009 ◽  
Vol 421-422 ◽  
pp. 143-147
Author(s):  
Masafumi Kobune ◽  
Hideto Tada ◽  
Hisashi Oshima ◽  
Daisuke Horii ◽  
Akihiro Tamura ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Ferroelectric Properties ◽  
Hot Isostatic Pressing ◽  
Film Surface ◽  
Secondary Phase ◽  
Gas Pressure ◽  
Root Mean Square Roughness ◽  
Isostatic Pressing ◽  
Force Microscopy ◽  
Atomic Force

After depositing amorphous (Bi0.5La0.5)(Ni0.5Ti0.5)O3 (BLNT) films on BLNT seed layer/Pt(100)/ MgO(100) substrates by room-temperature sputtering, the crystallization of the perovskite-struc- tured films has been tried by hot isostatic pressing (HIP). The samples with a single-phase perovskite structure HIP-treated at 800°C for 1 h under gas pressures of 0.51.0 MPa showed good crystallinity of  = 0.960.98 without accompanying the precipitation of the secondary phase. It was confirmed that a large root mean square roughness value of 44.2 nm for the sample HIP-treated at 800°C for 1 h under gas pressure of 0.1 MPa is due to innumerable Bi4Ti3O12-like rod-shaped grains precipitated in the film surface, based on atomic force microscopy. It is shown that the BLNT sample HIP-treated at 800°C for 1 h under gas pressure of 1.0 MPa exhibits the best hysteresis loop shape with a remanent polarization of Pr = 5 C/cm2 and a coercive field of Ec = 150 kV/cm of the six.

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

scholarly journals Chemosensing on Miniaturized Plasmonic Substrates

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 275
Author(s):  
Pengcheng Wang ◽  
Rodica Elena Ionescu
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Localized Surface Plasmon Resonance ◽  
Thin Layers ◽  
Localized Surface Plasmon ◽  
Force Microscopy ◽  
Atomic Force ◽  
Model Molecule ◽  
First Time ◽  
Scanning Electron

Round, small-sized coverslips were coated for the first time with thin layers of indium tin oxide (ITO, 10–40 nm)/gold (Au, 2–8 nm) and annealed at 550 °C for several hours. The resulting nanostructures on miniaturized substrates were further optimized for the localized surface plasmon resonance (LSPR) chemosensing of a model molecule—1,2-bis-(4-ppyridyl)-ethene (BPE)—with a detection limit of 10−12 M BPE in an aqueous solution. All the fabrication steps of plasmonic-annealed platforms were characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM).

Structural, Optical and Morphological Studies on Nanostructure ITO Thin Films

2013 ◽  
Vol 678 ◽  
pp. 140-143
Author(s):  
Rangasamy Balasundraprabhu ◽  
N. Muthukumarasamy ◽  
E.V. Monakhov ◽  
B.G. Svensson
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Fused Silica ◽  
Morphological Studies ◽  
Atomic Force ◽  
Ito Thin Films ◽  
Deposited Films ◽  
Ito Films

Indium tin oxide (ITO) thin films exhibiting good transmittance and conductivity suitable for solar cell applications have been prepared on Si(100) and fused silica substrates by optimizing the dc sputtering parameters such as power density and Ar partial pressure. Structural analysis of the as-deposited and annealed ITO films indicated that the as-deposited films are predominantly amorphous, whereas the films annealed at 200–400 °C are found to be of polycrystalline nature exhibiting dominant peaks corresponding to the (222) and (400) planes. The optical transmittance and band gap values of the films are observed to exhibit a change on annealing. From the ellipsometry studies on ITO/Si annealed at 300°C, it is found that graded layer consist of the mixing of two ITO materials with slightly different optical constants and the grading is almost linear. The resistivity of the ITO films is found to decrease with annealing temperature, correlating with the improvement in the crystal quality, and values in the range of 2-3 x10-4 Ω-cm are observed for the films annealed at 300°C. Surface topography study of the films has been performed using atomic force microscope(AFM) and the results are discussed.

TOPOGRAPHICAL EVOLUTION OF MAGNETRON SPUTTERING Ti THIN FILMS DURING OXIDATION OBSERVED BY AFM

2011 ◽  
Vol 18 (01n02) ◽  
pp. 61-69 ◽  
Author(s):  
XINYUE LI ◽  
YONGZHONG JIN ◽  
DONGLIANG LIU ◽  
XIANGUANG ZENG ◽  
RUISONG YANG
Keyword(s):  
Grain Growth ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Film Surface ◽  
Titanium Oxides ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Different Temperatures ◽  
Preferential Nucleation

Titanium films of 120 nm thickness were magnetron sputtered on glass substrates at room temperature, and subsequently they were annealed under flowing oxygen atmosphere at different temperatures and time. Atomic force microscopy (AFM) was used to study topographic characteristics of the films, including nucleation, crystalline feature, grain size, clustering and roughening. The initial nucleation of titanium oxides has almost completed during annealing at 300°C for 120 min or 400°C for 30 min. Especially, we have already observed the preferential nucleation and grain growth of titanium oxides on locations that protrude from the surface, as opposed to deep grooves. It is confirmed by AFM characterization that both of annealing temperature and time can hasten the nucleation and grain growth of titanium oxides, but annealing time is less influential than its temperature. The typical crystal transfer from amorphous-like to crystalline state occurs at 300–400°C for 120 min during annealing, but the too low temperature of 200°C does not contribute to the crystal transfer. In addition, higher annealing temperature (600°C) leads to the transformation of crystal texture from globular-like to flaky type. Generally, higher annealing temperature or time can lead to higher film surface roughness through the grooving effect, but the roughness decreases with the increase of annealing time (at 400°C for 90–120 min).

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