Effects of Pressure Dependence on Nanocolumnar Zinc Oxide Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 787-791 ◽  
Author(s):  
N. Ameera ◽  
A. Shuhaimi ◽  
S. Najwa ◽  
K.M. Hakim ◽  
M. Mazwan ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Pressure Dependence ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Photoluminescence Properties ◽  
Deposition Pressure ◽  
Glass Substrates

Nanocolumnar zinc oxide (ZnO) was deposited on glass substrates by RF magnetron sputtering.It was performed with a ZnO target at RF power of 200 W. The deposition wascarried out in argon and oxygen ambient at the ratio of 10 and 5 sccmrespectively, with total deposition time of 1 hour. The growth temperature wasfixed at 500°C and deposition pressure specified at 3, 5 and 10 mTorr. It wasobserved that the morphological and photoluminescence properties of ZnOstrongly dependent on the deposition pressure. The ZnO mean grain area was inverselyrelated with the surface roughness. The best morphological andphotoluminescence properties was found to be associated with ZnO grown at 10mTorr. Smooth ZnO surface and lowest defects related emission in PL wasobtained for the respective sample.

Effects of Growth Temperature on the Structural Properties of Zinc Oxide Nanograins Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 500-504
Author(s):  
N. Ameera ◽  
A. Shuhaimi ◽  
S. Najwa ◽  
K.M. Hakim ◽  
M. Mazwan ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force

Nanograins zinc oxide (ZnO) withc-axis preferred orientation was deposited on glass substrates by RF magnetron sputtering. It was performed with a ZnO target with 99.999% purity at RF power of 200 W. The deposition was carried out in argon and oxygen ambient at the ratio flow-rates of 10 and 5 sccm respectively, with total deposition time of 1 hour. The films were grown atgrowth temperatures were specified at RT, 100, 200, 300, 400 and 500°C. The effects of the growth temperature on the ZnO structural property was investigated by x-ray diffraction (XRD). The best ZnO crystalline quality obtained at growth temperature, TGof 300°C was further characterized by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM).

Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering

2013 ◽  
Vol 873 ◽  
pp. 426-430
Author(s):  
Xian Wu Xiu ◽  
Li Xu ◽  
Cheng Qiang Zhang
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Hexagonal Structure ◽  
Visible Range ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sputtering Power

Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along thecaxis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10-3Ω cm at a RF power of 15 W with a Hall mobility of 11 cm2V-1s-1and a carrier concentration of 1.1×1019cm-3. The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.

GROWTH CHARACTERISTIC OF GZO FILM FABRICATED BY RF MAGNETRON SPUTTERING

2015 ◽  
Vol 75 (7) ◽  
Author(s):  
Farah Lyana Shain ◽  
Azmizam Manie @ Mani ◽  
Lam Mui Li ◽  
Saafie Salleh ◽  
Afishah Alias ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Characteristic ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Rf Power ◽  
Argon Flow ◽  
Sputtering Power

This paper investigate the dependence of film thickness onto characteristic of Gallium doped Zinc Oxide (GZO). GZO films were deposited on a glass substrate by RF Magnetron Sputtering using GZO ceramic target with 99.99% purity. Thicknesses were altered by varying the deposition time from 10 min to 50 min meanwhile the sputtering power, argon flow and target distance were fixed in order to investigate the influence of film thickness to the growth characteristic, structural, optical properties and surface morphology of the films. Sputtering was performed with RF power of 100 watt and the argon flow was set at 10 sccm. GZO thin films on various thicknesses range from 130 nm to 460 nm were successfully deposited onto glass substrate with the crystallite grain size in range of 20.63 nm to 22.04 nm with the optical transmittance above 85 %. 

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

Growth of PbTe films by magnetron sputtering

2001 ◽  
Vol 691 ◽  
Author(s):  
A. Jdanov ◽  
J. Pelleg ◽  
Z. Dashevsky ◽  
R. Shneck
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
High Resolution Electron Microscopy ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Auger Depth Profile ◽  
Resolution Electron ◽  
Pbte Film

ABSTRACTThin films of PbTe were deposited on Si (111) wafers and glass substrates at a constant power for different times and at a constant time at various power levels. In some cases substrate heating to a temperature of ∼673K was performed during sputtering. Structural analysis by Xray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. It is expected that it is feasible to obtain epitaxial PbTe film by RF magnetron sputtering.

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