Transparent Conducting SnO2:Al Films Prepared on α-Al2O3 (0001) by MOCVD

2014 ◽  
Vol 893 ◽  
pp. 554-557
Author(s):  
Feng Ji ◽  
Yong Liang Tan ◽  
Chang Lv ◽  
Zhen Tai Hou
Keyword(s):  
Absorption Edge ◽  
Chemical Vapor ◽  
Lattice Relaxation ◽  
Atomic Ratio ◽  
Visible Range ◽  
Axis Orientation ◽  
Rutile Structure ◽  
Average Transmittance ◽  
Crystalline Films ◽  
Anneal Temperature

1-10% (atomic ratio of Al/Sn) Aluminium-doped tin oxide (SnO2:Al) single crystalline films were prepared on α-Al2O3(0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The films were annealed in air at 400 °C, 700°C, 800°C and 900°C, respectively. The structural, electrical and optical properties of the samples were investigated. The obtained films were rutile structure with high a-axis orientation. The Hall mobility and carrier concentration of the samples were varied with the Al concentration increasing and different anneal temperature. The average transmittance for the SnO2:Al films in the visible range was over 82% and the absorption edge shifted to the shorter wavelength with Al concentration increasing. The position of Al3+ in the lattice was influenced by anneal temperature. After high temperature annealed, the location of SnO2(200) diffraction peak shifted slightly towards low 2θ direction which was due to the lattice relaxation, and the absorption edge of the films shifted to the shorter wavelength because of the Burstein-Moss effect.

Structural and Optoelectronic Properties of Single Crystalline SnO2:Ga Films Deposited on α-Al2O3 (0001) by MOCVD

2009 ◽  
Vol 79-82 ◽  
pp. 763-766
Author(s):  
Xu An Pei ◽  
Feng Ji ◽  
Jin Ma ◽  
Ti Ning ◽  
Zhen Guo Song ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Optoelectronic Properties ◽  
Visible Range ◽  
Pure Sno2 ◽  
Rutile Structure ◽  
Single Crystalline ◽  
Crystalline Films ◽  
Xrd Patterns ◽  
Α Al2o3 ◽  
Structural And Optoelectronic Properties

12% Gallium-doped tin oxide (SnO2:Ga) single crystalline films have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The grown temperatures were varied from 400 to 600°C. According to XRD patterns, the film deposited at 500°C has the best single crystalline structure. Subsequently, 3 to 15% doped films were fabricated at 500°C using the same method, except that Gallium organometallic (OM) source was injected in pulsed-mode for the 3, 5 and 10% -doped films. Then, structural and optoelectronic properties of the films were investigated in detail. The obtained films all have the rutile structure of pure SnO2. Film with resistivity of 1.09×10−2Ω cm, carrier concentration of 8.86×1019cm−3 and Hall mobility of 6.49cm2 v−1 s−1 was obtained at 5% of Ga concentration. The average transmittance for the SnO2:Ga films in the visible range were over 90%.

Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD

2009 ◽  
Vol 79-82 ◽  
pp. 1535-1538
Author(s):  
Ling Yi Kong ◽  
Fan Yang ◽  
Jin Ma ◽  
Cai Na Luan ◽  
Zhen Zhu
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Atomic Ratio ◽  
Visible Range ◽  
Electrical And Optical Properties ◽  
Average Transmittance ◽  
Gallium Content

Ga2xIn2(1-x)O3 thin films with different gallium content x [x = Ga/(Ga+In) atomic ratio] have been prepared on -Al2O3 (0001) substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of these films have been investigated in detail. The XRD analysis revealed that, as the gallium content increased, the crystalline quality of the films decreased. The highest Hall mobility of the films was 41.32 cm2v−1s−1. The absolute average transmittance of the Ga2xIn2(1-x)O3 thin films in the visible range exceeded 91%. The band gap could be tuned from 3.59 to 4.87 eV as gallium content increased.

Structural and Optical Properties of SnO2 Films Grown on 6H-SiC by MOCVD

2009 ◽  
Vol 79-82 ◽  
pp. 1539-1542
Author(s):  
Zhen Zhu ◽  
Jin Ma ◽  
Cai Na Luan ◽  
Fan Yang ◽  
Ling Yi Kong
Keyword(s):  
Optical Properties ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Rutile Structure ◽  
Average Transmittance ◽  
Sno2 Thin Films ◽  
Relationship Of

SnO2 thin films have been deposited on 6H-SiC(0001) substrates by metalorganic chemical vapor deposition (MOCVD) system. The structural and optical properties of SnO2 films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometry. The XRD analysis revealed that the prepared samples were SnO2 epitaxial films of rutile structure with a clear relationship of SnO2(100)// 6H-SiC(0001). The average transmittance for the deposited SnO2 samples in the visible range was about 60%.

Preparation and Characterization of IZO Transparent Conducting Films by the Sol-Gel Method

2004 ◽  
Vol 449-452 ◽  
pp. 469-472 ◽  
Author(s):  
Chang Hyun Kim ◽  
Jin Hong Lee ◽  
Byung Ok Park
Keyword(s):  
Sol Gel ◽  
Atomic Ratio ◽  
Visible Range ◽  
Gel Method ◽  
Sol Gel Method ◽  
Indium Zinc Oxide ◽  
Average Transmittance ◽  
Method Effects ◽  
Izo Thin Film

Indium-zinc oxide (IZO), with Zn/(Zn+In)=0.33 - 0.78, films were deposited by the sol-gel method. Effects of Zn/(Zn+In) atomic ratio and annealing temperature on the structural, electrical and optical properties of IZO thin film were investigated. Films of Zn/(Zn+In)=0.33 prepared at 600°C had the lowest resistivity value, 4.48X10-2Ω cm (carrier concentration=3.83X 1018cm-3and mobility=25.54 cm2/Vs), and the structure of these films matched that of Zn2In2O5film. Average optical transmittances of all films were above 80% in the visible range. The highest average transmittance was observed at Zn/(Zn+In)=0.5, with 86.8% in the visible range.

Transparent Conducting ZnO:Ga Epitaxial Films Prepared on Epi-GaN/Al2O3 (0001) by MOCVD

2010 ◽  
Vol 160-162 ◽  
pp. 634-639
Author(s):  
Qiao Qun Yu ◽  
Jin Ma ◽  
Cai Na Luan ◽  
Ling Yi Kong ◽  
Zhen Zhu
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Ratio ◽  
Visible Range ◽  
Electrical And Optical Properties ◽  
Average Transmittance ◽  
Gallium Doping ◽  
Metalorganic Chemical Vapour Deposition ◽  
Ga Doping ◽  
Ga Content

High-quality Gallium-doped zinc oxide (ZnO:Ga) films have been prepared on epi-GaN/sapphire (0001) substrates by the metalorganic chemical vapour deposition (MOCVD) method. The relative amount of gallium doping was varied from 0 to 8% (atomic ratio). The structural, electrical and optical properties of the ZnO:Ga films have been investigated in detail, as a function of Ga content. All the prepared samples have the wurtzite structure of pure ZnO with a strong (0002) preferred orientation. The microstructure for the surface of films was markedly influenced by the amount of Ga doping. The resistivity decreases continuously with adding Ga content and reaches to the value of 8.4×10-3 Ω•cm at 8%. The average transmittance for the deposited ZnO:Ga samples in the visible range was over 75%.

Effects of Deposition Rate on the Structural, Morphological and Optical Properties of Brookite TiO2 Films Prepared by MOCVD

2017 ◽  
Vol 898 ◽  
pp. 1787-1795
Author(s):  
Wei Guang Wang ◽  
Ming Xian Wang ◽  
Xian Jin Feng ◽  
Jin Ma
Keyword(s):  
Optical Properties ◽  
Deposition Rate ◽  
Chemical Vapor ◽  
Visible Range ◽  
Organic Chemical ◽  
Epitaxial Relationship ◽  
Crystalline Films ◽  
Metal Organic ◽  
Relationship Of ◽  
Organic Chemical Vapor Deposition

Compared to anatase and rutile TiO2, the brookite TiO2 (b-TiO2) is relatively seldom investigated, because it is difficult to be prepared. In order to explore a scientific and effective approach to prepare high quality b-TiO2 crystalline films, the effects of deposition rate on the properties of b-TiO2 films prepared on yttria-stabilized zirconia (YSZ) (110) substrates by metal organic chemical vapor deposition (MOCVD) were investigated in this study. The structural analyses indicated that the b-TiO2 film prepared with the lowest deposition rate of 1.25 Å/min had the best single crystalline quality for which the epitaxial relationship between the film and substrate was determined as b-TiO2(120) || YSZ(110) with an in-plane epitaxial relationship of b-TiO2[001]|| YSZ[001] and b-TiO2[20]||YSZ[10]. The RMS surface roughness of the obtained films decreased from 7.02 to 1.11 nm as the deposition rate decreased. The average transmittances of all the obtained b-TiO2 films exceeded 90% in the visible range. The optical band gaps increased from 3.54 to 3.63 eV as the deposition rate decreased. Apparently, the deposition rate has a significant influence on the structural, morphological and optical properties. Therefore, it provides a practicable way to manipulate such properties of b-TiO2 films for different applications in the field of transparent optoelectronic devices.

Transparent Conducting SnO2:Zn Films Prepared on Sapphire by MOCVD

2009 ◽  
Vol 79-82 ◽  
pp. 771-774
Author(s):  
Zhen Guo Song ◽  
Feng Ji ◽  
Jin Ma ◽  
Ti Ning ◽  
Xu An Pei ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Visible Region ◽  
Optical Transmittance ◽  
Atomic Ratio ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Sapphire Substrates ◽  
Transparent Conducting ◽  
Zn Content ◽  
Crystalline Films

1-10% {atomic ratio of Zn/(Zn+Sn)} zinc-doped tin oxide (SnO2:Zn) films were successfully prepared on sapphire substrates by MOCVD method. The structural, optical and electrical properties of the SnO2:Zn films were investigated. The obtained films were high quality crystalline films with high a-axis orientation. The optical transmittance of the SnO2:Zn films with the thickness 1-1.4μm was about 80% in visible region. The Hall mobility and carrier concentration of the SnO2:Zn films varied with the Zn content increasing.

Solvent-Free Powder Synthesis and MOF-CVD Thin Films of the Mesoporous Metal-Organic Framework MAF-6

2019 ◽  
Author(s):  
Timothée Stassin ◽  
Ivo Stassen ◽  
Joao Marreiros ◽  
Alexander John Cruz ◽  
Rhea Verbeke ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metal Organic Framework ◽  
Chemical Vapor ◽  
Uptake Capacity ◽  
Powder Synthesis ◽  
Crystalline Films ◽  
Metal Organic ◽  
Mesoporous Metal ◽  
First Time ◽  
Organic Framework

A simple solvent- and catalyst-free method is presented for the synthesis of the mesoporous metal-organic framework (MOF) MAF-6 (RHO-Zn(eIm)2) based on the reaction of ZnO with 2-ethylimidazole vapor at temperatures ≤ 100 °C. By translating this method to a chemical vapor deposition (CVD) protocol, mesoporous crystalline films could be deposited for the first time entirely from the vapor phase. A combination of PALS and Kr physisorption measurements confirmed the porosity of these MOF-CVD films and the size of the MAF-6 supercages (diam. ~2 nm), in close agreement with powder data and calculations. MAF-6 powders and films were further characterized by XRD, TGA, SEM, FTIR, PDF and EXAFS. The exceptional uptake capacity of the mesoporous MAF-6 in comparison to the microporous ZIF-8 is demonstrated by vapor-phase loading of a molecule larger than the ZIF-8 windows.

scholarly journals Preparation of Glass Plate-Supported Nanostructure ZnO Thin Film Deposited by Sol-Gel Spin-Coating Technique and Its Photocatalytic Degradation to Monoazo Textile Dye

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Degradation ◽  
Spin Coating ◽  
Sol Gel ◽  
Glass Plate ◽  
Zno Thin Films ◽  
Visible Range ◽  
Textile Dye ◽  
Axis Orientation

Glass plate-supported nanostructure ZnO thin films were deposited by sol-gel spin coating. Films were preheated at275∘Cfor 10 minutes and annealed at 350, 450, and550∘Cfor 80 minutes. The ZnO thin films were transparent ca 80–90% in visible range and revealed that absorption edges at about 370 nm. Thec-axis orientation improves and the grain size increases which was indicated by an increase in intensity of the (002) peak at34.4∘in XRD corresponding to the hexagonal ZnO crystal. The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of some operational parameters such as the number of layer and reusability of ZnO nanostructure thin film were examined. The results showed that the five-layer coated glass surfaces have a very high photocatalytic performance.

Multi-Component ZnO-In2O3-SnO2Thin Films Deposited by RF Magnetron Co-Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 119-122 ◽  
Author(s):  
Chang Sik Son ◽  
Jae Sung Hur ◽  
Byoung Hoon Lee ◽  
Sang Yul Back ◽  
Jeong Seop Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Visible Range ◽  
Rf Power ◽  
Working Pressure ◽  
Average Transmittance ◽  
Sno2 Thin Films ◽  
Ar Gas ◽  
Sputtering System ◽  
High Chemical Stability

Multi-component ZnO-In2O3-SnO2 thin films have been prepared by RF magnetron co-sputtering using targets composed of In4Sn3O12(99.99%) [1] and ZnO(99.99%) at room temperature. In4Sn3O12 contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / ( RF1 + RF2 )] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied 0~100W respectively. The thicknesses of the films were 350~650nm. The composition concentrations of the each film were measured with EPMA and AES. The low resistivity of 1-2 × 10-3 and an average transmittance above 80% in the visible range were attained for the films over a range of δ (0.3 ≤ δ ≤ 0.5). The films also showed a high chemical stability with time and a good uniformity.

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