Structural and Optical Properties of SnO2 Films Grown on 6H-SiC by MOCVD

2009 ◽  
Vol 79-82 ◽  
pp. 1539-1542
Author(s):  
Zhen Zhu ◽  
Jin Ma ◽  
Cai Na Luan ◽  
Fan Yang ◽  
Ling Yi Kong
Keyword(s):  
Optical Properties ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Rutile Structure ◽  
Average Transmittance ◽  
Sno2 Thin Films ◽  
Relationship Of

SnO2 thin films have been deposited on 6H-SiC(0001) substrates by metalorganic chemical vapor deposition (MOCVD) system. The structural and optical properties of SnO2 films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometry. The XRD analysis revealed that the prepared samples were SnO2 epitaxial films of rutile structure with a clear relationship of SnO2(100)// 6H-SiC(0001). The average transmittance for the deposited SnO2 samples in the visible range was about 60%.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

scholarly journals Comparison Study of Structural and Optical Properties of InxGa1−xN/GaN Quantum Wells with Different In Compositions

2000 ◽  
Vol 5 (S1) ◽  
pp. 977-983
Author(s):  
Yong-Hwan Kwon ◽  
G. H. Gainer ◽  
S. Bidnyk ◽  
Y. H. Cho ◽  
J. J. Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Recombination Rates ◽  
Satellite Peak ◽  
Interface Quality

The effect of In on the structural and optical properties of InxGa1−xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.

Structural and optical properties of delafossite-type CuAlO2 thin films prepared by RF reactive sputtering

2005 ◽  
Vol 905 ◽  
Author(s):  
B. Yang ◽  
Y. M. Lu ◽  
C. Neumann ◽  
A. Polity ◽  
C. Z. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Reactive Sputtering ◽  
Wavelength Dependence ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Deposition Parameters ◽  
Delafossite Structure ◽  
Average Transmittance

AbstractDelafossite-type CuAlO2 thin films have been deposited by radio frequency (RF) reactive sputtering on sapphire using a CuAlO2 ceramic target. A study of structural and optical properties was performed on films of varying deposition parameters such as substrate temperature and oxygen partial pressure and also post annealing. The crystalline phase in the films was identified to be the delafossite structure by x-ray diffraction. The optical properties, such as the wavelength dependence of the transmittance and the band gap, were determined. The average transmittance is 80% in the wavelength range of 400-1500 nm and the band gap is 3.81 eV.

Structural and Optical Properties of α-Ga2O3 Films Deposited on Sapphire (10‾10) and (01‾12) Substrate by MOCVD

2013 ◽  
Vol 746 ◽  
pp. 369-373 ◽  
Author(s):  
Yu Lv ◽  
Wei Mi ◽  
Cai Na Luan ◽  
Jin Ma
Keyword(s):  
Optical Properties ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Structural And Optical Properties ◽  
Visible Wavelength Range ◽  
Average Transmittance ◽  
Different Temperatures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Ga2O3thin films were grown on sapphire m-cut () and r-cut () orientations substrates at different temperatures by metal-organic chemical vapor deposition. Structural and optical properties of the Ga2O3films were investigated including the influence by annealing for the obtained films. The Ga2O3films on sapphire () and () substrate areα-Ga2O3. The crystallization of the films decreases after annealed at 900 °C. The average transmittance of the samples in the visible wavelength range was over 86% and the optical band gapEgwas about 4.755.15 eV. TheEgof the samples increases after annealing at 900 °C.

Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD

2009 ◽  
Vol 79-82 ◽  
pp. 1535-1538
Author(s):  
Ling Yi Kong ◽  
Fan Yang ◽  
Jin Ma ◽  
Cai Na Luan ◽  
Zhen Zhu
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Atomic Ratio ◽  
Visible Range ◽  
Electrical And Optical Properties ◽  
Average Transmittance ◽  
Gallium Content

Ga2xIn2(1-x)O3 thin films with different gallium content x [x = Ga/(Ga+In) atomic ratio] have been prepared on -Al2O3 (0001) substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of these films have been investigated in detail. The XRD analysis revealed that, as the gallium content increased, the crystalline quality of the films decreased. The highest Hall mobility of the films was 41.32 cm2v−1s−1. The absolute average transmittance of the Ga2xIn2(1-x)O3 thin films in the visible range exceeded 91%. The band gap could be tuned from 3.59 to 4.87 eV as gallium content increased.

Transparent Conducting SnO2:Al Films Prepared on α-Al2O3 (0001) by MOCVD

2014 ◽  
Vol 893 ◽  
pp. 554-557
Author(s):  
Feng Ji ◽  
Yong Liang Tan ◽  
Chang Lv ◽  
Zhen Tai Hou
Keyword(s):  
Absorption Edge ◽  
Chemical Vapor ◽  
Lattice Relaxation ◽  
Atomic Ratio ◽  
Visible Range ◽  
Axis Orientation ◽  
Rutile Structure ◽  
Average Transmittance ◽  
Crystalline Films ◽  
Anneal Temperature

1-10% (atomic ratio of Al/Sn) Aluminium-doped tin oxide (SnO2:Al) single crystalline films were prepared on α-Al2O3(0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The films were annealed in air at 400 °C, 700°C, 800°C and 900°C, respectively. The structural, electrical and optical properties of the samples were investigated. The obtained films were rutile structure with high a-axis orientation. The Hall mobility and carrier concentration of the samples were varied with the Al concentration increasing and different anneal temperature. The average transmittance for the SnO2:Al films in the visible range was over 82% and the absorption edge shifted to the shorter wavelength with Al concentration increasing. The position of Al3+ in the lattice was influenced by anneal temperature. After high temperature annealed, the location of SnO2(200) diffraction peak shifted slightly towards low 2θ direction which was due to the lattice relaxation, and the absorption edge of the films shifted to the shorter wavelength because of the Burstein-Moss effect.

Effects of Deposition Rate on the Structural, Morphological and Optical Properties of Brookite TiO2 Films Prepared by MOCVD

2017 ◽  
Vol 898 ◽  
pp. 1787-1795
Author(s):  
Wei Guang Wang ◽  
Ming Xian Wang ◽  
Xian Jin Feng ◽  
Jin Ma
Keyword(s):  
Optical Properties ◽  
Deposition Rate ◽  
Chemical Vapor ◽  
Visible Range ◽  
Organic Chemical ◽  
Epitaxial Relationship ◽  
Crystalline Films ◽  
Metal Organic ◽  
Relationship Of ◽  
Organic Chemical Vapor Deposition

Compared to anatase and rutile TiO2, the brookite TiO2 (b-TiO2) is relatively seldom investigated, because it is difficult to be prepared. In order to explore a scientific and effective approach to prepare high quality b-TiO2 crystalline films, the effects of deposition rate on the properties of b-TiO2 films prepared on yttria-stabilized zirconia (YSZ) (110) substrates by metal organic chemical vapor deposition (MOCVD) were investigated in this study. The structural analyses indicated that the b-TiO2 film prepared with the lowest deposition rate of 1.25 Å/min had the best single crystalline quality for which the epitaxial relationship between the film and substrate was determined as b-TiO2(120) || YSZ(110) with an in-plane epitaxial relationship of b-TiO2[001]|| YSZ[001] and b-TiO2[20]||YSZ[10]. The RMS surface roughness of the obtained films decreased from 7.02 to 1.11 nm as the deposition rate decreased. The average transmittances of all the obtained b-TiO2 films exceeded 90% in the visible range. The optical band gaps increased from 3.54 to 3.63 eV as the deposition rate decreased. Apparently, the deposition rate has a significant influence on the structural, morphological and optical properties. Therefore, it provides a practicable way to manipulate such properties of b-TiO2 films for different applications in the field of transparent optoelectronic devices.

scholarly journals Impact of Al2O3 and Dy2O3 Substitution on the Physical, Structural, and Radiation Shielding Properties of Li2O-B2O3 Glass System

2021 ◽  
Vol 50 (10) ◽  
pp. 3127-3138
Author(s):  
Aljewaw O.B. ◽  
Karim M.K.A ◽  
Zaid M.H.M ◽  
Halimah M.K. ◽  
Noor N.M ◽  
...  
Keyword(s):  
Optical Properties ◽  
Xrd Analysis ◽  
Radiation Shielding ◽  
Glass System ◽  
Diffraction Spectrum ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Prepared Glass ◽  
Nir Absorption ◽  
Shielding Properties

A new series of lithium-borate glass systems (23Li2O-72B2O3 in mol%) were synthesized with the substitution of Al2O3 (5 mol.%) as a modifier and doped with 0.3 and 0.5 mol% of Dy2O3. Four series of glasses (S1, S2, S3 and S4) were synthesized via the conventional melt-quenching technique and characterized by using UV-Visible-NIR absorption spectrometer and Fourier transform infrared (FTIR) spectroscopy. The current investigation gives further insight on the structural and optical properties of the samples. The diffraction spectrum obtained from the X-ray Diffraction (XRD) analysis shows no typical peaks in the glass system, which indicates its amorphous phase. The optical properties of Al3+ and Dy3+ ions were evaluated and found that there is a pivot effect for the addition of Al2O3 and Dy2O3 for the glass system. Notably, the sample S2 shows different behaviours for physical, structural, and optical properties compared with other prepared glass samples that can be attributed to the increment of Al2O3. Besides, the physical and ionizing shielding features were investigated for current glass samples. The radiation shielding properties were examined within the energy range of 0.015 until 15 MeV. The sample S4 has the optimum radiation shielding features as a result of the addition of Dy2O3. Hence, the composition attributes a new glass system that can be used in various applications such as radiation dosimeter and photon shielding materials.

Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions

1999 ◽  
Vol 595 ◽  
Author(s):  
Yong-Hwan Kwon ◽  
G. H. Gainer ◽  
S. Bidnyk ◽  
Y. H. Cho ◽  
J. J. Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Recombination Rates ◽  
Satellite Peak ◽  
Interface Quality

AbstractThe effect of In on the structural and optical properties of InxGa1−xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.

scholarly journals Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells

2021 ◽  
Vol 11 (18) ◽  
pp. 8639
Author(s):  
Zhiwei Li ◽  
Yugang Zeng ◽  
Yue Song ◽  
Jianwei Zhang ◽  
Yinli Zhou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Lattice Relaxation ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Peak Energy ◽  
Metal Organic ◽  
The Relationship

InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.

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