Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD

2009 ◽  
Vol 79-82 ◽  
pp. 1535-1538
Author(s):  
Ling Yi Kong ◽  
Fan Yang ◽  
Jin Ma ◽  
Cai Na Luan ◽  
Zhen Zhu
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Atomic Ratio ◽  
Visible Range ◽  
Electrical And Optical Properties ◽  
Average Transmittance ◽  
Gallium Content

Ga2xIn2(1-x)O3 thin films with different gallium content x [x = Ga/(Ga+In) atomic ratio] have been prepared on -Al2O3 (0001) substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of these films have been investigated in detail. The XRD analysis revealed that, as the gallium content increased, the crystalline quality of the films decreased. The highest Hall mobility of the films was 41.32 cm2v−1s−1. The absolute average transmittance of the Ga2xIn2(1-x)O3 thin films in the visible range exceeded 91%. The band gap could be tuned from 3.59 to 4.87 eV as gallium content increased.

Preparation and Characterization of IZO Transparent Conducting Films by the Sol-Gel Method

2004 ◽  
Vol 449-452 ◽  
pp. 469-472 ◽  
Author(s):  
Chang Hyun Kim ◽  
Jin Hong Lee ◽  
Byung Ok Park
Keyword(s):  
Sol Gel ◽  
Atomic Ratio ◽  
Visible Range ◽  
Gel Method ◽  
Sol Gel Method ◽  
Indium Zinc Oxide ◽  
Average Transmittance ◽  
Method Effects ◽  
Izo Thin Film

Indium-zinc oxide (IZO), with Zn/(Zn+In)=0.33 - 0.78, films were deposited by the sol-gel method. Effects of Zn/(Zn+In) atomic ratio and annealing temperature on the structural, electrical and optical properties of IZO thin film were investigated. Films of Zn/(Zn+In)=0.33 prepared at 600°C had the lowest resistivity value, 4.48X10-2Ω cm (carrier concentration=3.83X 1018cm-3and mobility=25.54 cm2/Vs), and the structure of these films matched that of Zn2In2O5film. Average optical transmittances of all films were above 80% in the visible range. The highest average transmittance was observed at Zn/(Zn+In)=0.5, with 86.8% in the visible range.

Growth and Characterization of PZT Thin Films

2008 ◽  
Author(s):  
Daqun Bao ◽  
Yi Zhang ◽  
Hang Guo
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Annealing Process ◽  
Pzt Thin Films ◽  
X Ray ◽  
Crystallographic Structures ◽  
Strain Equation

This paper presents the growth and characterization of PZT thin films by using the sol-gel technology. In this paper, we study the influences of annealing process and different substrates on the orientation and crystalline quality of PZT thin films. The crystallographic structures are tested by using X-ray diffractometer (XRD), and the residual stresses of PZT thin films are obtained by calculation from a derived stress-strain equation in XRD analysis. Moreover, surface morphology and microstructure of the films are investigated by using AFM and SEM, and the polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that PZT thin films prepared by using the sol-gel method have good properties and can be used for developing PZT-based micro and nano devices.

Synthesis and Characterization of Deposited NiO Thin Films by Spray Pyrolysis Technique

2019 ◽  
Vol 17 (17) ◽  
pp. 27-32
Author(s):  
Chouaieb Zaouche ◽  
Yacine Aoun ◽  
Said Benramache ◽  
Abdelouahab Gahtar
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Deposition Rate ◽  
Spray Pyrolysis Technique ◽  
Visible Region ◽  
Band Gap Energy ◽  
Electrical And Optical Properties ◽  
Minimum Value ◽  
Average Transmittance

AbstractIn this work, nickel oxide was fabricated on glass substrate at 450 °C by spray pyrolysis technique. The NiO layers were obtained with 0.05M molarity, which were deposited by various deposition rates 20, 40, 60 and 80 ml. The effects of deposition rate on the structural, electrical and optical properties were examined. All fabricated NiO thin films were observed a nanocrystalline a cubic structure with a strong (111) preferred orientation, it is only phase was observed in all deposited NiO. The film elaborated with 60 ml have a minimum value of crystallite size was 15.8 nm. All NiO thin films have an average transmittance is about 70 % in the visible region. The NiO thin films have a verity in the band gap energy from 3.34 to 3.51 eV because the effect of deposition, the minimum value was found at 80 ml, this condition have a lowest Urbach energy. The NiO thin films have an electrical resistivity was decreased from 0.625 to 0.152 (Ω.cm) with increasing the deposition rate from 20 to 80ml. The best results of NiO thin films are obtained in the deposition NiO films by 40 and 80 ml.

Effect of Annealing on Laser-Ablated K3Li2-xNb5+xO15+2x Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 302-304
Author(s):  
Zu Sheng Zhan ◽  
Yan Sheng Gong ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thin Films ◽  
Quartz Substrate ◽  
Substrate Surface ◽  
Visible Range ◽  
Deposition Condition ◽  
Sintered Ceramic ◽  
Post Annealing ◽  
Average Transmittance

In this study, K3Li2-xNb5+xO15+2x (KLN) thin films were prepared by laser-ablated a sintered ceramic target. For an optimum deposition condition, in-situ post annealing method was employed on as-deposited films. XRD measurements showed that KLN films with (310) preferred orientation were obtained on fused quartz substrate. Surface morphology studies indicated that in-situ post annealing could improve the surface quality of KLN thin films. The average transmittance of as-deposited and annealed films in the visible range was nearly 80% to 90%.

Transparent Conducting ZnO:Ga Epitaxial Films Prepared on Epi-GaN/Al2O3 (0001) by MOCVD

2010 ◽  
Vol 160-162 ◽  
pp. 634-639
Author(s):  
Qiao Qun Yu ◽  
Jin Ma ◽  
Cai Na Luan ◽  
Ling Yi Kong ◽  
Zhen Zhu
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Ratio ◽  
Visible Range ◽  
Electrical And Optical Properties ◽  
Average Transmittance ◽  
Gallium Doping ◽  
Metalorganic Chemical Vapour Deposition ◽  
Ga Doping ◽  
Ga Content

High-quality Gallium-doped zinc oxide (ZnO:Ga) films have been prepared on epi-GaN/sapphire (0001) substrates by the metalorganic chemical vapour deposition (MOCVD) method. The relative amount of gallium doping was varied from 0 to 8% (atomic ratio). The structural, electrical and optical properties of the ZnO:Ga films have been investigated in detail, as a function of Ga content. All the prepared samples have the wurtzite structure of pure ZnO with a strong (0002) preferred orientation. The microstructure for the surface of films was markedly influenced by the amount of Ga doping. The resistivity decreases continuously with adding Ga content and reaches to the value of 8.4×10-3 Ω•cm at 8%. The average transmittance for the deposited ZnO:Ga samples in the visible range was over 75%.

Structural and Optical Properties of SnO2 Films Grown on 6H-SiC by MOCVD

2009 ◽  
Vol 79-82 ◽  
pp. 1539-1542
Author(s):  
Zhen Zhu ◽  
Jin Ma ◽  
Cai Na Luan ◽  
Fan Yang ◽  
Ling Yi Kong
Keyword(s):  
Optical Properties ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Rutile Structure ◽  
Average Transmittance ◽  
Sno2 Thin Films ◽  
Relationship Of

SnO2 thin films have been deposited on 6H-SiC(0001) substrates by metalorganic chemical vapor deposition (MOCVD) system. The structural and optical properties of SnO2 films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometry. The XRD analysis revealed that the prepared samples were SnO2 epitaxial films of rutile structure with a clear relationship of SnO2(100)// 6H-SiC(0001). The average transmittance for the deposited SnO2 samples in the visible range was about 60%.

Investigation of Structural, Optical an Electrical Characterization of AZO Films Used for Solar Cells

2016 ◽  
Vol 703 ◽  
pp. 214-218
Author(s):  
Chao Song ◽  
Zhen Xu Lin ◽  
Yi Zhang ◽  
Xiang Wang ◽  
Yan Qing Guo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quartz Substrate ◽  
Electrical Characterization ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Electrical And Optical Properties ◽  
Average Transmittance ◽  
Diffraction Peaks

Transparent conductive Al-doped ZnO (AZO) thin films used as transparent conductive oxide (TCO) electrode layers for thin film solar cells were deposited on quartz substrate by radio frequency (RF) magnetron sputtering. After deposition, the samples were annealed at various temperatures. The structural, electrical, and optical properties of these films have been analyzed as a function of the annealing temperature. All of these samples exhibit strong (002) diffraction peaks and the average transmittance in visible range is about 85%. The crystallinity of films together with some changes of the electrical resistance has been improved after thermal annealing. The best characteristics have been obtained at 400 °C, where the lowest resistivity is 2.4×10-3 Ω cm and the optical band gap is 3.22 eV.

Transparent Conducting SnO2:Al Films Prepared on α-Al2O3 (0001) by MOCVD

2014 ◽  
Vol 893 ◽  
pp. 554-557
Author(s):  
Feng Ji ◽  
Yong Liang Tan ◽  
Chang Lv ◽  
Zhen Tai Hou
Keyword(s):  
Absorption Edge ◽  
Chemical Vapor ◽  
Lattice Relaxation ◽  
Atomic Ratio ◽  
Visible Range ◽  
Axis Orientation ◽  
Rutile Structure ◽  
Average Transmittance ◽  
Crystalline Films ◽  
Anneal Temperature

1-10% (atomic ratio of Al/Sn) Aluminium-doped tin oxide (SnO2:Al) single crystalline films were prepared on α-Al2O3(0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The films were annealed in air at 400 °C, 700°C, 800°C and 900°C, respectively. The structural, electrical and optical properties of the samples were investigated. The obtained films were rutile structure with high a-axis orientation. The Hall mobility and carrier concentration of the samples were varied with the Al concentration increasing and different anneal temperature. The average transmittance for the SnO2:Al films in the visible range was over 82% and the absorption edge shifted to the shorter wavelength with Al concentration increasing. The position of Al3+ in the lattice was influenced by anneal temperature. After high temperature annealed, the location of SnO2(200) diffraction peak shifted slightly towards low 2θ direction which was due to the lattice relaxation, and the absorption edge of the films shifted to the shorter wavelength because of the Burstein-Moss effect.

scholarly journals Structural and Magnetic Properties of Ni81Fe19Thin Film Grown on Si(001) Substrate via Single Graphene Layer

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Gui-fang Li ◽  
Shibin Liu ◽  
Shanglin Yang ◽  
Yongqian Du
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Structural Investigation ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Magnetic Thin Films ◽  
Structural And Magnetic Properties

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.

Dependence of Film Thickness on Properties of Al Doped ZnO Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2305-2311
Author(s):  
Ying Ge Yang ◽  
Dong Mei Zeng ◽  
Hai Zhou ◽  
Wen Ran Feng ◽  
Shan Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electrical Parameter ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Thickness Effect ◽  
Visible Range ◽  
Glass Substrates ◽  
Doped Zno

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.

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