The Dynamic Characteristics of Al Gate CuPc Thin Film Transistor
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We have fabricated Au/CuPc/Al/CuPc/Au organic thin film transistor (OTFTs) using vacuum deposition with CuPc thin films of stable chemical property and semi conductive Al gate thin film electrode. The static and dynamic characteristics were tested at room temperature. The test results show that the switching speed of the OTFT is ton=2.68ms, toff= 1.32ms, amplification bandwidth is 400Hz, and the cutoff frequency fc=400Hz when inputting 100Hz small square wave signal. Our OTFT has submicron conductive channel, shows operation characteristics of high frequency, high speed and high current density. Good static and dynamic characteristics of OTFT can be obtained by controlling appropriate Al gate film thickness and CuPc film thickness.
2006 ◽
Vol 24
(4)
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pp. 1228-1232
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2016 ◽
Vol 63
(5)
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pp. 2057-2065
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Keyword(s):
2015 ◽
Vol 62
(7)
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pp. 2313-2319
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