The Dynamic Characteristics of Al Gate CuPc Thin Film Transistor

2014 ◽  
Vol 981 ◽  
pp. 830-833
Author(s):  
Ze Ying Wang ◽  
Dong Xing Wang ◽  
Yong Shuang Zhang ◽  
Yue Yue Wang ◽  
Jing Hua Yin ◽  
...  

We have fabricated Au/CuPc/Al/CuPc/Au organic thin film transistor (OTFTs) using vacuum deposition with CuPc thin films of stable chemical property and semi conductive Al gate thin film electrode. The static and dynamic characteristics were tested at room temperature. The test results show that the switching speed of the OTFT is ton=2.68ms, toff= 1.32ms, amplification bandwidth is 400Hz, and the cutoff frequency fc=400Hz when inputting 100Hz small square wave signal. Our OTFT has submicron conductive channel, shows operation characteristics of high frequency, high speed and high current density. Good static and dynamic characteristics of OTFT can be obtained by controlling appropriate Al gate film thickness and CuPc film thickness.

2006 ◽  
Vol 24 (4) ◽  
pp. 1228-1232 ◽  
Author(s):  
Huiping Jia ◽  
Srinivas Gowrisanker ◽  
Gaurang K. Pant ◽  
Robert M. Wallace ◽  
Bruce E. Gnade

Author(s):  
Eric N. Dattoli ◽  
Kevin Baler ◽  
Wei Lu

High-performance transparent and flexible thin film transistors (TFTs) were fabricated on glass and plastic substrates using alligned SnO2 nanowires as the channel material. High densities of crystalline SnO2 nanowires were dry-transferred directly onto the glass/plastic substrates, followed by low-temperature patterning of the source/drain and gate electrodes. Transparent TFTs fabricated on glass substrates show excellent electrical properties and optical transmittance. Excellent mechanical flexibility can be further obtained under cyclic tension experiments in devices fabricated on plastic substrates. The charge carrier mobility was estimated to be as high as 160 cm2/V·s — two orders of magnitude higher than that of conventional amorphous-silicon or organic TFTs. Cutoff frequency > 70 MHz and on/off ratio > 106 have also been demonstrated. The low-cost nanowire growth and dry-transfer processes make this approach a cost-effective means to fabricate transparent and/or flexible TFTs on non-conventional substrates.


2016 ◽  
Vol 63 (5) ◽  
pp. 2057-2065 ◽  
Author(s):  
T. K. Maiti ◽  
L. Chen ◽  
H. Zenitani ◽  
H. Miyamoto ◽  
M. Miura-Mattausch ◽  
...  

Carbon ◽  
2021 ◽  
Vol 178 ◽  
pp. 506-514
Author(s):  
Meiyu He ◽  
Jiayue Han ◽  
Xingwei Han ◽  
Jun Gou ◽  
Ming Yang ◽  
...  

Author(s):  
Koichiro Asano ◽  
Yui Sasaki ◽  
Qi Zhou ◽  
Riho Mitobe ◽  
Wei Tang ◽  
...  

We herein report an extended gate-type organic thin-film transistor (OTFT)-based polyamine sensor and its application for pattern recognition. The extended-gate electrode was functionalized with a complex of copper(II) ions and...


2003 ◽  
Author(s):  
Toshihide Kamata ◽  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  

2021 ◽  
Vol 278 ◽  
pp. 116825
Author(s):  
Zhuozhi Yao ◽  
Ting-Jung Chang ◽  
David Wentzlaff ◽  
Barry P. Rand

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