Study of Fe Diffusion in Cr2O3 by Secondary Ion Mass Spectrometry

2005 ◽  
Vol 237-240 ◽  
pp. 940-945
Author(s):  
Antônio Claret Soares Sabioni ◽  
Anne Marie Huntz ◽  
F. Silva ◽  
François Jomard
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Bulk Diffusion ◽  
Grain Boundary Diffusion ◽  
Iron Diffusion ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Chromia protective layers are used to prevent corrosion by oxidation of many alloys, such as the stainless steels, for instance. To check if chromia is a barrier to the outward diffusion of iron in these alloys, iron diffusion in chromia was studied in both polycrystals and oxide films formed by oxidation of Ni-30Cr alloy in the temperature range 700-1100°C at an oxygen pressure equal to 10-4 atm. An iron film of about 70 nm thick was deposited on the chromia surface, and after the diffusing treatment, the iron depth profiles were established by secondary ion mass spectrometry (SIMS). Using a solution of the Fick’s second law for diffusion from a thick film, effective or bulk diffusion coefficients were determined in a first penetration domain. Then, Le Claire’s and Hart’s models allowed both the bulk diffusion coefficient and the grain boundary diffusion parameter (aDgbd) to be obtained in a second penetration domain. Iron bulk and grain boundary diffusion does not vary significantly according to the nature-microstructure of chromia. The activation energy of grain boundary diffusion is at least equal or even greater than the activation energy of bulk diffusion, probably on account of segregation phenomena. Iron diffusion was compared to cationic self-diffusion and related to the protective character of chromia.

Grain Boundary Diffusion in Cation-Doped Superplastic 3Y-TZP

2006 ◽  
Vol 45 ◽  
pp. 1626-1631
Author(s):  
Marek Boniecki ◽  
Rafał Jakieła ◽  
Zdzislaw Librant ◽  
Wladyslaw Wesolowski ◽  
Danuta Dabrowska ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Grain Boundary ◽  
Diffusion Coefficients ◽  
Boundary Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Tetragonal Zirconia ◽  
Grain Boundary Diffusion ◽  
Depth Profiles ◽  
Secondary Ion

The superplastic flow in tetragonal zirconia polycrystals stabilised 3mol% Y2O3 (3YTZP) is strongly affected by the dopant cations, which segregate at the grain boundary. It is proposed that this flow is controlled by grain boundary diffusion of Zr4+ ions and therefore the dopant cations should change the grain boundary diffusion. In order to prove this thesis the measurements of grain boundary diffusion coefficients were made using Hf4+ ions as tracer. Zirconia samples were doped with 1mol% of Al2O3, SiO2, MgO, MgAl2O4, GeO2 and TiO2. The tracer was deposited on the surface of the zirconia specimens by placing several drops of hafnium nitrate and then drying at 373 K. In this way, thin films of HfO 2 were obtained. The samples were heated in the range 1553 – 1773 K for 1 to 24 h. The concentration versus depth profiles were measured using secondary ion mass spectrometry (SIMS). Calculated hence grain boundary diffusion coefficients were several times bigger for doped samples than for pure 3Y-TZP samples.

Bulk Diffusion of Homovalent Atomic Probes of Scandium, Lanthanum and Thorium in Single Crystals of Tungsten

2010 ◽  
Vol 305-306 ◽  
pp. 1-13 ◽  
Author(s):  
S.M. Klotsman ◽  
G.N. Tatarinova ◽  
Alexander N. Timofeev
Keyword(s):  
Mass Spectrometry ◽  
Melting Point ◽  
Single Crystals ◽  
Periodic Table ◽  
Secondary Ion Mass Spectrometry ◽  
Volume Diffusion ◽  
Bulk Diffusion ◽  
Relaxation Energy ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

The volume diffusion of nonmagnetic homovalent atomic probes (APs) from the IIIB group of the periodic table of the elements (PTE)Sc, La, and Th in Whas been studied by the method of secondary ion mass spectrometry. The Arrhenius dependences have the following parameters: the coefficients DSc - (D0)Sc = (1.4  0.3)10-4 m2s-1 and QSc = (546±4) kJ/mole; the coefficients D¬La - (D0)La = (1.6  0.8)×10-6 m2s-1 and QLa = (41010) kJ/mole; and the coefficients DTh - (D0)Th = 4.4×10-6 m2s-1 and QTh = 447 kJ/mole. It has been found that the coefficients D5dAP(Tm)W of the bulk diffusion of transition 5d APs in W coincide at its melting point (Tm)W. The enthalpies, QWSc,La,Th, of the volume diffusion of nonmagnetic homovalent APs from the IIIB group of PTE increase linearly with decreasing relaxation volumes, , of these APs, which interact with vacancies in W. The sums, (Q + E)WSc,La,Th, of the bulk diffusion enthalpies, QWSc,La,Th, and the relaxation energy, (E)WSc,La,Th, of the environments of homovalent APs diffusing to W are nearly constant.

Hydrogen Dynamics and Tee Distribution of H Sites in Undoped a-Si:H and a-Ge:H

1991 ◽  
Vol 219 ◽  
Author(s):  
R. Shinar ◽  
X.-L. Wu ◽  
S. Mitra ◽  
J. Shinar
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Long Range ◽  
Secondary Ion Mass Spectrometry ◽  
Ir Studies ◽  
Multiple Trapping ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Trapping Sites

ABSTRACTSecondary ion mass spectrometry and IR studies of long-range hydrogen motion in undoped a-Si:H and a-Ge:H of varying H content and microstructure are reviewed and discussed. In particular, their relation to the multiple trapping (MT) model, the role of microvoids, the significance of the Meyer-Neldel relation (MNR), and the nature of H sites is addressed. It is suggested that while the MT mechanism may be significant in a-Si:H of low H content Cfj, it is largely marginal in films where CH ≥ 10 at.% H and in a-Ge:H. Mono Si-H bonds on microvoid surfaces are apparently deep H trapping sites up to ∼ 400°C, but H is desorbed from such sites in a-Ge:H above 180°C. The MNR between the diffusional activation energy and prefactor is observed among the various a-Si:H and a-Ge:H, but its significance is questionable, and may be due to the MT mechanism only in low H content a-Si:H. The nature of the distribution of H sites is also discussed.

Sr-Diffusion in Ce0.8Gd0.2O2-δ Layers for SOFC Application

2013 ◽  
Vol 1542 ◽  
Author(s):  
Tabea Mandt ◽  
Carsten Korte ◽  
Uwe Breuer ◽  
Alexander Weber ◽  
Mirko Ziegner ◽  
...  
Keyword(s):  
Activation Energy ◽  
Grain Boundary ◽  
Barrier Layer ◽  
Boundary Diffusion ◽  
Bulk Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Activation Energy ◽  
Boundary Density ◽  
Long Term Stability ◽  
Maximum Lifetime

ABSTRACTIn this study Sr2+ diffusion along Ce0.8Gd0.2O2-δ (CGO) grain boundaries is investigated. Model samples with different grain boundary densities were prepared by different thin film tech-niques. Diffusion experiments were performed by annealing and subsequent ToF-SIMS analysis. The activation energy of grain boundary diffusion is determined as 492 kJ/mol, which is 2/3 of the bulk diffusion activation energy 739 kJ/mol, deduced from literature data [1-5].The formation of an electrical blocking SrZrO3 layer due to grain boundary diffusion of Sr2+ through a CGO barrier layer may limit the long term stability of Solid Oxide Fuel Cells based on Zr0.85Y0.15O2-δ electrolytes and La0.58Sr0.4Co0.2Fe0.8O3-δ cathodes. The grain boundary diffusivity and the CGO grain boundary density highly influence the kinetic of the SrZrO3 formation. Aim of this study is to gain data for a prediction of the maximum lifetime of a SOFC system, limited by the increasing cell resistivity due to SrZrO3 formation. Specifications for the CGO barrier layer preparation concerning grain boundary density are determined.

About Fe Diffusion in Cu

2012 ◽  
Vol 323-325 ◽  
pp. 171-176 ◽  
Author(s):  
D. Prokoshkina ◽  
A.O. Rodin ◽  
V. Esin
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Temperature Dependence ◽  
Boundary Diffusion ◽  
Bulk Diffusion ◽  
Grain Boundary Diffusion ◽  
Radiotracer Technique ◽  
Exponential Factor ◽  
Temperature Range

The temperature dependence of the bulk diffusion coefficient of Fe in Cu is determined by EDX in the temperature range from 923 to 1273 K, , m2/s. These results are different from that obtained earlier by radiotracer technique: activation energy is less by 30 kJ/mol and pre-exponential factor is 50 times smaller. Deviations from ideality of investigated solutions do not explain the differences; consequently, the thermodynamical factor would not responsible for such an effect. Fast grain boundary diffusion of Fe in Cu was not observed in the temperature range from 823 to 1073 K.

Applications of Time-OF-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

1990 ◽  
Vol 48 (2) ◽  
pp. 308-309
Author(s):  
Bruno Schueler ◽  
Robert W. Odom
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Structural Information ◽  
Time Of Flight ◽  
Biological Tissues ◽  
Polymer Surfaces ◽  
Tof Sims ◽  
Secondary Ions ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) provides unique capabilities for elemental and molecular compositional analysis of a wide variety of surfaces. This relatively new technique is finding increasing applications in analyses concerned with determining the chemical composition of various polymer surfaces, identifying the composition of organic and inorganic residues on surfaces and the localization of molecular or structurally significant secondary ions signals from biological tissues. TOF-SIMS analyses are typically performed under low primary ion dose (static SIMS) conditions and hence the secondary ions formed often contain significant structural information.This paper will present an overview of current TOF-SIMS instrumentation with particular emphasis on the stigmatic imaging ion microscope developed in the authors’ laboratory. This discussion will be followed by a presentation of several useful applications of the technique for the characterization of polymer surfaces and biological tissues specimens. Particular attention in these applications will focus on how the analytical problem impacts the performance requirements of the mass spectrometer and vice-versa.

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