Diffusion in Transition Metal Diborides - An Overview

Literature data on (self-)diffusion in transition metal borides are extremely sparse due to the low atomic mobility of the constituents and due to the fact that for B there exist no suitable radioactive tracers and only two stable isotopes with a high natural abundance of 19 % (10B) and 81 % (11B), respectively. The present paper reviews our experiments on the tracer diffusion of transition metals and boron in TiB2, WB2+x, and (TixWyCrz)B2 which were carried out using stable isotopes and secondary ion mass spectrometry (SIMS). For tracer deposition, ion implantation and magnetron sputtering were used. In order to measure boron diffusion, a specially designed experiment was build up where a TiB2 layer was sputtered on an isotope-enriched Ti11B2 bulk ceramic sample. In addition, first results on chemical interdiffusion in the system (TixWyCrz)B2 will be presented. Here, a method based on magnetron sputtered layers and secondary neutral mass spectrometry (SNMS) was used which allows to determine much lower diffusivities (down to 10-19 m2/s) than the conventional EDX line-scan method on cross-sectional samples.

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Tracer Diffusion Coefficients of Li Ions in LixMn2O4 Thin Films Observed by Isotope Exchange Secondary Ion Mass Spectrometry

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.0c06375 ◽

2020 ◽

Vol 124 (42) ◽

pp. 22981-22992

Author(s):

Naoaki Kuwata ◽

Gen Hasegawa ◽

Daiki Maeda ◽

Norikazu Ishigaki ◽

Takamichi Miyazaki ◽

...

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Diffusion Coefficients ◽

Isotope Exchange ◽

Secondary Ion Mass Spectrometry ◽

Tracer Diffusion ◽

Ion Mass Spectrometry ◽

Tracer Diffusion Coefficients ◽

Secondary Ion

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First results of the study of particulate matter samples of the Middle Ural using the secondary ion mass spectrometry

Оптика атмосферы и океана ◽

10.15372/aoo20210604 ◽

2021 ◽

Vol 34 (6) ◽

pp. 414-420

Author(s):

A.A. Shchelkanov ◽

M.A. Kovalenko ◽

A.Ya. Kupryazhkin ◽

Yu.I. Markelov ◽

V.A. Poddubny ◽

...

Keyword(s):

Mass Spectrometry ◽

Particulate Matter ◽

Secondary Ion Mass Spectrometry ◽

Ion Mass Spectrometry ◽

First Results ◽

Secondary Ion

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Measurements of the Diffusion of Iron and Carbon in Single Crystal NiAl using Ion Implantation and Secondary Ion Mass Spectrometry

MRS Proceedings ◽

10.1557/proc-527-227 ◽

1998 ◽

Vol 527 ◽

Author(s):

R. J. Hanrahan ◽

S. P. Withrow ◽

M. Puga-Lambers

Keyword(s):

Mass Spectrometry ◽

Ion Implantation ◽

Single Crystal ◽

Secondary Ion Mass Spectrometry ◽

Tracer Diffusion ◽

Dynamic Strain ◽

Enhanced Diffusion ◽

Ion Mass Spectrometry ◽

Impurity Elements ◽

Secondary Ion

ABSTRACTClassical diffusion measurements in intermetallic compounds are often complicated by low diffusivities or low solubilities of the elements of interest. Using secondary ion mass spectrometry for measurements over a relatively shallow spatial range may be used to solve the problem of low diffusivity. In order to simultaneously obtain measurements on important impurity elements with low solubilities we have used ion implantation to supersaturate a narrow layer near the surface. Single crystal NiAl was implanted with either 12C or both 56Fe and 12C in order to investigate the measurement of substitutional (Fe) versus interstitial (C) tracer diffusion and the cross effect of both substitutional and interstitial diffusion. When C alone was implanted negligible diffusion was observed over the range of times and temperatures investigated. When both Fe and C were implanted together significantly enhanced diffusion of the C was observed, which is apparently associated with the movement of Fe. This supports one theory of dynamic strain aging in Fe alloyed NiAl.

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Diffusion of Boron in Silicon and Silicon-Germanium in the Presence of Carbon

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.237-240.998 ◽

2005 ◽

Vol 237-240 ◽

pp. 998-1003

Author(s):

Mudith S.A. Karunaratne ◽

Janet M. Bonar ◽

Jing Zhang ◽

Peter Ashburn ◽

Arthur F.W. Willoughby

Keyword(s):

Mass Spectrometry ◽

Diffusion Coefficients ◽

Silicon Germanium ◽

Molecular Beam ◽

Secondary Ion Mass Spectrometry ◽

Concentration Profiles ◽

Boron Diffusion ◽

Coated Surfaces ◽

Secondary Ion ◽

Strained Sige

Boron diffusion in Si and strained SiGe with and without C was studied. Using gassource molecular beam epitaxy (MBE), B containing epitaxial layers of: (i) Si, (ii) Si containing 0.1% C, (iii) SiGe with 11% Ge and (iv) SiGe with 11% Ge and with a 0.1% C, were grown on substrates. These samples were then rapid thermal annealed (RTA) at 940, 1000 and 1050°C in an O2 ambient. Self-interstitial-, vacancy- and non-injection conditions were achieved by annealing bare, Si3N4- and Si3N4+SiO2-coated surfaces, respectively. Concentration profiles of B, Ge and C were obtained using Secondary-Ion Mass Spectrometry (SIMS). Diffusion coefficients of B in each type of matrix were extracted by computer simulation. We find that B diffusivity is reduced by both Ge and C. The suppression due to C is much larger. In all materials, a substantial enhancement of B diffusion was observed due to self-interstitial injection compared to non-injection conditions. These results indicate that B diffusion in all four types of layers is mediated primarily by interstitialcy type defects.

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Tracer diffusion coefficients of Li+ ions in c-axis oriented LixCoO2 thin films measured by secondary ion mass spectrometry

Physical Chemistry Chemical Physics ◽

10.1039/d0cp04598e ◽

2021 ◽

Vol 23 (3) ◽

pp. 2438-2448

Author(s):

Gen Hasegawa ◽

Naoaki Kuwata ◽

Yoshinori Tanaka ◽

Takamichi Miyazaki ◽

Norikazu Ishigaki ◽

...

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Discharge Rate ◽

Tracer Diffusion ◽

Lithium Diffusion ◽

Ion Mass Spectrometry ◽

Key Factor ◽

Li Ion ◽

Tracer Diffusion Coefficients ◽

Secondary Ion

Lithium diffusion is a key factor in determining the charge/discharge rate of Li-ion batteries. Herein, we study the tracer diffusion coefficient of lithium ions in the c-axis oriented LiCoO2 thin film using secondary ion mass spectrometry (SIMS).

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A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.453 ◽

2008 ◽

Vol 600-603 ◽

pp. 453-456

Author(s):

Margareta K. Linnarsson ◽

J. Isberg ◽

Adolf Schöner ◽

Anders Hallén

Keyword(s):

Mass Spectrometry ◽

Silicon Carbide ◽

Ion Implantation ◽

Secondary Ion Mass Spectrometry ◽

Synthetic Diamond ◽

Group Iv ◽

Boron Diffusion ◽

Group Iv Semiconductors ◽

Secondary Ion ◽

Silicon Silicon

The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.

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Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

MRS Proceedings ◽

10.1557/proc-148-163 ◽

1989 ◽

Vol 148 ◽

Cited By ~ 20

Author(s):

E.D. Marshall ◽

S.S. Lau ◽

C.J. Palmstrøm ◽

T. Sands ◽

C.L. Schwartz ◽

...

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Solid Phase ◽

Cross Sectional ◽

Ohmic Behavior ◽

Transmission Electron ◽

Solid Phase Regrowth ◽

Ohmic Contact Formation ◽

Secondary Ion

ABSTRACTAnnealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.

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Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

MRS Proceedings ◽

10.1557/proc-810-c8.9 ◽

2004 ◽

Vol 810 ◽

Cited By ~ 1

Author(s):

Lilya Ihaddadene-Lecoq ◽

Jerome Marcon ◽

Kaouther Ketata

Keyword(s):

Mass Spectrometry ◽

Ion Implantation ◽

Secondary Ion Mass Spectrometry ◽

Crystalline Silicon ◽

Low Energy ◽

Concentration Profiles ◽

Boron Diffusion ◽

Boron Difluoride ◽

Secondary Ion ◽

Trap Interstitial

ABSTRACTWe have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

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