Dielectrophoretic Assembly of Aluminum Nitride (AlN) Single Nanowire Deep Ultraviolet Photodetector

2019 ◽  
Vol 60 ◽  
pp. 86-93
Author(s):  
Kasif Teker
Keyword(s):  
Low Voltage ◽  
Uv Light ◽  
Fast Response ◽  
Light Sensitivity ◽  
Image Sensors ◽  
Uv Photodetector ◽  
Low Voltage Operation ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
New Applications

High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photodetector has been fabricated utilizing very high-quality AlN nanowires through a very practical dielectrophoretic assembly scheme. The low-voltage (≤ 3 V) operating UV photodetector has selectively shown a high photocurrent response to the 254 nm UV light. Furthermore, the photocurrent transients have been modelled to determine the rise and decay time constants as 7.7 s and 11.5 s, respectively. In consequence, combination of deep UV light selectivity and low voltage operation make AlN nanowires great candidates for the development of compact deep UV photodetectors.

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Specific Detectivity ◽  
Self Powered

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

A High Performance UV Photodetector from Thin Film Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
Robert D. Mckeag ◽  
Michael D. Whitfield ◽  
Simon Sm Chan ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Quantum Efficiency ◽  
Dark Current ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Uv Photodetector ◽  
Deep Uv

ABSTRACTThin film diamond has been used to fabricate a photodetector which displays high sensitivity to deep UV light, with an external quantum efficiency of greater than one, a dark current of less than 0.1nA and which is near ‘blind’ to visible light.

scholarly journals Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties

RSC Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 1394-1402 ◽  
Author(s):  
Xu Han ◽  
Shuanglong Feng ◽  
Yiming Zhao ◽  
Lei Li ◽  
Zhaoyao Zhan ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Fourth Generation ◽  
Ternary Oxide ◽  
Uv Photodetector ◽  
Ultraviolet Detection ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Nanowire Networks ◽  
Uv C

Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted lots of attention for deep UV photodetector applications, as it is blind to the UV-A/B band and only responds to the UV-C band.

scholarly journals High-sensitive and fast response to 255 nm deep-UV light of CH 3 NH 3 PbX 3 (X = Cl, Br, I) bulk crystals

2018 ◽  
Vol 5 (9) ◽  
pp. 180905 ◽  
Author(s):  
Zhaojun Zhang ◽  
Wei Zheng ◽  
Richeng Lin ◽  
Feng Huang
Keyword(s):  
Homeland Security ◽  
Electronic Transport ◽  
Uv Light ◽  
Fast Response ◽  
Important Application ◽  
Bulk Crystals ◽  
High Quality ◽  
Fast Speed ◽  
Deep Uv ◽  
Speed Response

Deep-UV light detection has important application in surveillance and homeland security regions. CH 3 NH 3 PbX 3 (X = Cl, Br, I) materials have outstanding optical absorption and electronic transport properties suitable for obtaining excellent deep-UV photoresponse. In this work, we have grown high-quality CH 3 NH 3 PbX 3 (X = Cl, Br, I) bulk crystals and used them to fabricate photodetectors. We found that they all have high-sensitive and fast-speed response to 255 nm deep-UV light. Their responsivities are 10–10 3 times higher than MgZnO and Ga 2 O 3 detectors, and their response speeds are 10 3 times faster than Ga 2 O 3 and ZnO detectors. These results indicate a new promising route for deep-UV detection.

Liquid core waveguide with fiber optic coupling for remote pollution monitoring in the deep ultraviolet

1998 ◽  
Vol 37 (12) ◽  
pp. 279-284 ◽  
Author(s):  
Mathias Belz ◽  
Peter Dress ◽  
Karl-F. Klein ◽  
William J. O. Boyle ◽  
Hilmar Franke ◽  
...  
Keyword(s):  
Fiber Optic ◽  
Uv Light ◽  
Liquid Core ◽  
Pollution Monitoring ◽  
New Combination ◽  
Long Term Stability ◽  
Liquid Core Waveguide ◽  
Deep Ultraviolet ◽  
Deep Uv

A new combination of silica fibres, highly transparent in the ultraviolet (UV) and showing long term stability, combined with a teflon-coated liquid-core waveguide (LCW) is presented for remote sensing in the deep UV, for monitoring one of the major pollutants, nitrates, in water, but with potentially wider applicability. The arrangement exhibits low spectral loss in the range between wavelengths of 200 nm and 400 nm and can be used for analytical investigations to determine small concentrations of such impurities in water. The operation of the optical system to achieve guidance of UV light below a wavelength of 250 nm for fibre optic sensors is discussed. With an optical pathlength of 203 mm, nitrate concentrations as low as 22 μg/l could be detected.

Development and characterization of photodiode n-ZnO/p-Si by Radio Frecuency Sputtering, a sensor with low voltage operation and its response to visible and UV light

2019 ◽  
Vol 669 ◽  
pp. 364-370 ◽  
Author(s):  
I.R. Chávez-Urbiola ◽  
F.J. Willars-Rodríguez ◽  
R. Ramírez Bon ◽  
P. Vorobiev ◽  
Yu.V. Vorobiev
Keyword(s):  
Low Voltage ◽  
Uv Light ◽  
Low Voltage Operation

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

High resolution at low voltage: A new approach

1989 ◽  
Vol 47 ◽  
pp. 76-77
Author(s):  
Arthur V. Jones
Keyword(s):  
Low Voltage ◽  
Emission Sources ◽  
New Approach ◽  
Design Concepts ◽  
Probe Diameter ◽  
Low Voltage Operation ◽  
Sufficient Intensity ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Immersion Type

With the introduction of field-emission sources and “immersion-type” objective lenses, the resolution obtainable with modern scanning electron microscopes is approaching that obtainable in STEM and TEM-but only with specific types of specimens. Bulk specimens still suffer from the restrictions imposed by internal scattering and the need to be conducting. Advances in coating techniques have largely overcome these problems but for a sizeable body of specimens, the restrictions imposed by coating are unacceptable.For such specimens, low voltage operation, with its low beam penetration and freedom from charging artifacts, is the method of choice.Unfortunately the technical dificulties in producing an electron beam sufficiently small and of sufficient intensity are considerably greater at low beam energies — so much so that a radical reevaluation of convential design concepts is needed.The probe diameter is usually given by

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