Влияние термообработки на электрические характеристики полуизолирующих слоев, полученных с помощью облучения n-SiC высокоэнергетическими ионами аргона
2018 ◽
Vol 44
(6)
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pp. 11
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Keyword(s):
AbstractIrradiation of crystalline n -type silicon carbide ( n -SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i -SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i -SiC layers has been studied. The most high-ohmic ion-irradiated i -SiC layers with room-temperature resistivity of no less than 1.6 × 10^13 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 10^7 Ω cm.
2007 ◽
Vol 280-283
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pp. 341-344
2013 ◽
Vol 811
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pp. 72-76
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2012 ◽
Vol 05
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pp. 263-269
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Keyword(s):
2018 ◽
Vol 44
(3)
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pp. 229-231
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2016 ◽
Vol 2016
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pp. 1-7
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