An Experimental Study of the Polishing Process for MgO Single Crystal Substrate

2007 ◽  
Vol 329 ◽  
pp. 225-230 ◽  
Author(s):  
Ke Wang ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
Ning Hui Wang
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Removal Rate ◽  
Structural Characteristics ◽  
Chemical Properties ◽  
Single Crystal Substrate ◽  
Polishing Process ◽  
Crystal Substrate ◽  
Substrate Surfaces ◽  
Polishing Efficiency

In order to obtain ultra-smooth and damage free substrate surfaces for MgO single-crystal substrate with high polishing efficiency, an experimental investigation based on systemically designed polishing experiments are presented and discussed. Considering the structural characteristics and chemical properties of the MgO single crystal, the experiments use a polishing slurry containing SiO2 abrasives so that the process is performed under a combination of mechanical and chemical actions. The effects of the polishing process parameters, such as polishing pressure, rotational speed of polishing plate, and the flow rate and concentration of the polishing slurry, on the surface roughness and material removal rate (MRR) are analyzed. Finally, a recommendation is made for selecting the appropriate polishing parameters for MgO single crystal substrate, based on which a surface roughness of 0.3nm can be achieved on the MgO substrate in 20min of polishing time.

Mechanochemical Polishing of Single Crystal Diamond with Mixture of Oxidizing Agents

2006 ◽  
Vol 315-316 ◽  
pp. 852-855 ◽  
Author(s):  
Cheng Yong Wang ◽  
C. Chen ◽  
Yue Xian Song
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Smooth Surface ◽  
Removal Rate ◽  
Polishing Process ◽  
Iron Plate ◽  
Oxidizing Agents ◽  
Single Crystal Diamond ◽  
Lower Temperature ◽  
And Control

In order to achieve the smooth surface of diamond, several kinds of mixture oxidizing agents have been used to polish the single crystal diamond by a designed polishing apparatus. The existing of graphite and amorphous carbon has been found in the surface of diamond after polishing. The mechanochemical actions of oxidizing agents and the polishing iron plate have been proved. The mixture of oxidizing agents can decrease the polishing temperature so that the super-smooth surface of single crystal diamond can be achieved at lower temperature. The method provided is benefit not only to simplify polishing device and control the polishing process, but also to improve the removal rate and surface roughness.

Study on Fixed-Abrasive Lapping SiC Crystal Substrate Based on Diamond Particle

2014 ◽  
Vol 1017 ◽  
pp. 520-525
Author(s):  
Jian Xiu Su ◽  
Xue Ming Zhang ◽  
Su Fang Fu ◽  
Song Zhan Fan ◽  
Zhen Ling Liu
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Diamond Particle ◽  
Sample Surface ◽  
Single Crystal Substrate ◽  
Study Results ◽  
Surface Flatness ◽  
Crystal Substrate ◽  
Fixed Abrasive ◽  
Free Abrasive

Silicon carbide substrate has been widely used in semiconductor lighting (LED), integrated circuit and microelectronic, optoelectronic devices. According to the former study, a series of the fixed abrasive lapping platen has been developed. The material removal rate (MRR), surface roughness and surface flatness of lapping SiC single crystal substrate (0001) C surface are studied using fixed abrasive lapping. Compared with the results of the free abrasive lapping, the surface flatness of SiC single crystal substrate (0001) C surface after lapping with the fixed abrasive lapping is better than that of the free abrasive lapping, the MRR of lapping with the fixed abrasive lapping platen is higher than that of the free abrasive lapping and the surface roughness (Ra) of lapping with the fixed abrasive lapping is lower than that of the free abrasive lapping. The study results show that there are some scratches on the sample surface after lapping with the fixed abrasive lapping. There are some hills and pits on the sample surface after lapping with the free abrasive, but without scratches. The height difference of the surface profile lapping with the free abrasive is much larger than that of fixed abrasive lapping. The research results can provide a reference for studying the fixed abrasive lapping platen, the lapping process and lapping mechanism.

scholarly journals Study on the Mechanism of Solid-Phase Oxidant Action in Tribochemical Mechanical Polishing of SiC Single Crystal Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1547
Author(s):  
Wanting Qi ◽  
Xiaojun Cao ◽  
Wen Xiao ◽  
Zhankui Wang ◽  
Jianxiu Su
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Material Removal ◽  
Solid Phase ◽  
Removal Rate ◽  
Single Crystal Substrate ◽  
Surface Material ◽  
Reaction Products ◽  
Point Temperature ◽  
Crystal Substrate

Na2CO3—1.5 H2O2, KClO3, KMnO4, KIO3, and NaOH were selected for dry polishing tests with a 6H-SiC single crystal substrate on a polyurethane polishing pad. The research results showed that all the solid-phase oxidants, except NaOH, could decompose to produce oxygen under the frictional action. After polishing with the five solid-phase oxidants, oxygen was found on the surface of SiC, indicating that all five solid-phase oxidants can have complex tribochemical reactions with SiC. Their reaction products are mainly SiO2 and (SiO2)x. Under the action of friction, due to the high flash point temperature of the polishing interface, the oxygen generated by the decomposition of the solid-phase oxidant could oxidize the surface of SiC and generate a SiO2 oxide layer on the surface of SiC. On the other hand, SiC reacted with H2O and generated a SiO2 oxide layer on the surface of SiC. After polishing with NaOH, the SiO2 oxide layer and soluble Na2SiO3 could be generated on the SiC surface; therefore, the surface material removal rate (MRR) was the highest, and the surface roughness was the largest, after polishing. The lowest MRR was achieved after the dry polishing of SiC with KClO3.

Study on Slurry of SiC Crystal Substrate (0001) C Surface in CMP Based on Silica Sol (SiO2 Abrasive)

2014 ◽  
Vol 983 ◽  
pp. 214-217
Author(s):  
Zhu Qing Zhang ◽  
Hai Feng Cheng ◽  
Jian Xiu Su
Keyword(s):  
Surface Roughness ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Orthogonal Design ◽  
Substrate Material ◽  
Silica Sol ◽  
Single Crystal Substrate ◽  
Test Results ◽  
Crystal Substrate

SiC single crystal substrate has been become an indispensable substrate material in the field of semiconductor lighting. But, there is no report on the commercial slurry of chemical mechanical polishing (CMP) SiC substrate. In this paper, according to orthogonal design, the composition selection and optimization of CMP slurry based on silica sol (SiO2 abrasive) had been done in CMP SiC crystal substrate (0001) C surface by tests. The CMP slurry based on silica sol for SiC crystal substrate (0001) C surface had been obtained. According to the CMP test results, the material removal rate (MRR) is about 15nm/min and the surface roughness Ra is about 0.2nm.

Microstructure and enhanced in-plane ferroelectricity of Ba0.7Sr0.3TiO3 thin films grown on MgAl2O4 (001) single-crystal substrate

2006 ◽  
Vol 89 (23) ◽  
pp. 232906 ◽  
Author(s):  
X. Y. Zhou ◽  
T. Heindl ◽  
G. K. H. Pang ◽  
J. Miao ◽  
R. K. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Substrate ◽  
Crystal Substrate
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