Mechanochemical Polishing of Single Crystal Diamond with Mixture of Oxidizing Agents

2006 ◽  
Vol 315-316 ◽  
pp. 852-855 ◽  
Author(s):  
Cheng Yong Wang ◽  
C. Chen ◽  
Yue Xian Song
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Smooth Surface ◽  
Removal Rate ◽  
Polishing Process ◽  
Iron Plate ◽  
Oxidizing Agents ◽  
Single Crystal Diamond ◽  
Lower Temperature ◽  
And Control

In order to achieve the smooth surface of diamond, several kinds of mixture oxidizing agents have been used to polish the single crystal diamond by a designed polishing apparatus. The existing of graphite and amorphous carbon has been found in the surface of diamond after polishing. The mechanochemical actions of oxidizing agents and the polishing iron plate have been proved. The mixture of oxidizing agents can decrease the polishing temperature so that the super-smooth surface of single crystal diamond can be achieved at lower temperature. The method provided is benefit not only to simplify polishing device and control the polishing process, but also to improve the removal rate and surface roughness.

An Experimental Study of the Polishing Process for MgO Single Crystal Substrate

2007 ◽  
Vol 329 ◽  
pp. 225-230 ◽  
Author(s):  
Ke Wang ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
Ning Hui Wang
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Removal Rate ◽  
Structural Characteristics ◽  
Chemical Properties ◽  
Single Crystal Substrate ◽  
Polishing Process ◽  
Crystal Substrate ◽  
Substrate Surfaces ◽  
Polishing Efficiency

In order to obtain ultra-smooth and damage free substrate surfaces for MgO single-crystal substrate with high polishing efficiency, an experimental investigation based on systemically designed polishing experiments are presented and discussed. Considering the structural characteristics and chemical properties of the MgO single crystal, the experiments use a polishing slurry containing SiO2 abrasives so that the process is performed under a combination of mechanical and chemical actions. The effects of the polishing process parameters, such as polishing pressure, rotational speed of polishing plate, and the flow rate and concentration of the polishing slurry, on the surface roughness and material removal rate (MRR) are analyzed. Finally, a recommendation is made for selecting the appropriate polishing parameters for MgO single crystal substrate, based on which a surface roughness of 0.3nm can be achieved on the MgO substrate in 20min of polishing time.

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

Fundamental Studies on the Mechanisms of Oxide CMP

2000 ◽  
Vol 613 ◽  
Author(s):  
Uday Mahajan ◽  
Seung-Mahn Lee ◽  
Rajiv K. Singh
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Wear Rate ◽  
Removal Rate ◽  
Polished Surface ◽  
Electrostatic Repulsion ◽  
Polishing Process ◽  
Negative Surface ◽  
Negative Surface Charge ◽  
Slurry Stability

ABSTRACTIn this paper, results of studies on the addition of salt to a polishing slurry, in terms of its effect on slurry stability, SiO2 polishing rate and surface roughness of the polished surface are presented. Three salts, viz. LiCl, NaCl and KCl were selected, and three concentrations were tested. Polishing rate measurements using these slurries show that adding salt leads to increased removal rate without affecting surface roughness significantly. Based on these results, we can say that the agglomerates formed by adding salt to the slurry are fairly soft and easily broken during the polishing process. In addition, turbidity and particle size measurements show that significant coagulation of the particles in the slurry occurs only at the highest salt concentration, and is fastest for LiCl and NaCl, with KCl showing the slowest coagulation. From these results, it can be concluded that the enhancement in polish rate is due to increased contact at the wafer-pad-slurry interface, and not due to formation of larger agglomerated particles in the slurry. This is because of reduced electrostatic repulsion between these three surfaces, due to the screening of their negative surface charge by the metal ions in solution, resulting in a higher wear rate.

scholarly journals Fabrication and Characterization of Single-Crystal Diamond Membranes for Quantum Photonics with Tunable Microcavities

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1080
Author(s):  
Julia Heupel ◽  
Maximilian Pallmann ◽  
Jonathan Körber ◽  
Rolf Merz ◽  
Michael Kopnarski ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Membrane Thickness ◽  
Initial Surface ◽  
Crucial Component ◽  
Single Crystal Diamond ◽  
Fabrication And Characterization ◽  
Etching Parameters ◽  
Quantum Photonics

The development of quantum technologies is one of the big challenges in modern research. A crucial component for many applications is an efficient, coherent spin–photon interface, and coupling single-color centers in thin diamond membranes to a microcavity is a promising approach. To structure such micrometer thin single-crystal diamond (SCD) membranes with a good quality, it is important to minimize defects originating from polishing or etching procedures. Here, we report on the fabrication of SCD membranes, with various diameters, exhibiting a low surface roughness down to 0.4 nm on a small area scale, by etching through a diamond bulk mask with angled holes. A significant reduction in pits induced by micromasking and polishing damages was accomplished by the application of alternating Ar/Cl2 + O2 dry etching steps. By a variation of etching parameters regarding the Ar/Cl2 step, an enhanced planarization of the surface was obtained, in particular, for surfaces with a higher initial surface roughness of several nanometers. Furthermore, we present the successful bonding of an SCD membrane via van der Waals forces on a cavity mirror and perform finesse measurements which yielded values between 500 and 5000, depending on the position and hence on the membrane thickness. Our results are promising for, e.g., an efficient spin–photon interface.

Study on the Machining Parameters in Polishing Single-Crystal SiC Wafers with SG Films

2013 ◽  
Vol 589-590 ◽  
pp. 457-463 ◽  
Author(s):  
Zhi Du ◽  
Jing Lu ◽  
Cong Fu Fang ◽  
Hui Huang ◽  
Xi Peng Xu
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Smooth Surface ◽  
Sol Gel ◽  
Machining Parameters ◽  
Processing Quality ◽  
Rotating Speed ◽  
Single Crystal Sic ◽  
Sic Wafer ◽  
Diamond Abrasive

In this paper, diamond abrasive SG films were prepared by means of sol-gel technology for polishing single-crystal SiC wafers. The effects of machining parameters on processing quality including pressure, rotating speed and polishing time were investigated, respectively. The results indicated that the surface roughness decreased with increasing polishing time. While for pressure and rotating speed, there were inflections existing. Polishing SiC wafer under optimized machining parameters, an ultra smooth surface with the roughness of 3.7 nm could be achieved using 40 μm diamond grits.

The Performance and Optimization of Slurry on the Double Sided Polishing Process of Silicon Wafer

2007 ◽  
Vol 359-360 ◽  
pp. 324-328
Author(s):  
Wei Li ◽  
Gang Xiang Hu ◽  
Xiao Dong Hu ◽  
Xiao Zhen Hu
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Process Parameters ◽  
Ph Value ◽  
Removal Rate ◽  
Polished Surface ◽  
Polishing Process ◽  
Stock Removal

This study compares the effectiveness of different polishing slurries for Double Sided Polishing process of Silicon wafer in the polished surface roughness and stock removal rate, discusses the mechanism of Double Sided Polishing for silicon wafer with different type slurries, also the influence of the pH value, temperature and concentration of the slurries are discussed in this paper. Furthermore, by the optimization of the process parameters, the ultra-smooth of polished surface of silicon wafer has been got with higher efficient.

An Approach to the Influence of Flotative Abrasive Balls on Polishing Process

2006 ◽  
Vol 532-533 ◽  
pp. 393-396 ◽  
Author(s):  
Yong Dai ◽  
Qian Fa Deng ◽  
Xun Lv ◽  
Ju Long Yuan ◽  
Xun Jie Yu
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Removal Rate ◽  
Great Influence ◽  
Work Piece ◽  
Polishing Process ◽  
Soft Contact ◽  
Ball Diameter ◽  
Experiment Device

Polishing with Flotative Abrasive Balls(FABs) is a kind of soft contact polishing means， and the conventional polishing plate and pad are not needed in this case. The pressure of polishing is the flotage which is the upward force that a fluid exerts on the FABs, but the movement of work piece is similar to that in conventional polishing, the removal rate and quality of polishing is influenced by FAB and its flotage. An experiment device is built up and two kinds of FAB are designed and produced. Some primary experiments are carried out in order to investigate the influences of the size of FABs on the removal rate and surface roughness in polishing with FABs. It is found from the experiments that the grain size and the layers of FAB may have great influence on the removal rate of polishing; the surface roughness is mainly decided by the ball diameter and the layers of FAB. The results of experiments are discussed and analyzed, it indicates that the efficiency and quality depend on flotage and the number of active grains when the velocity of workpiece is assigned.

scholarly journals Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Nian Liu ◽  
Kohki Sugawara ◽  
Naoya Yoshitaka ◽  
Hideaki Yamada ◽  
Daisuke Takeuchi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Removal Rate ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Highly Efficient ◽  
Atomic Force ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Measurement Results

Abstract Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap semiconductor materials such as 4H-SiC (0001) and GaN (0001). In this study, a 20-mm square large mosaic single crystal diamond (SCD) substrate synthesized by microwave plasma chemical vapor deposition (CVD) was polished by PAP. Argon-based plasma containing oxygen was used in PAP to modify the surface of quartz glass polishing plate, and a high material removal rate (MRR) of 13.3 μm/h was obtained. The flatness of SCD polished by PAP measured by an interferometer was 0.5 μm. The surface roughness measured by both scanning white light interferometer (SWLI) (84-μm square) and atomic force microscope (AFM) (5-μm square) was less than 0.5 nm Sq. The micro-Raman spectroscopy measurement results of mosaic SCD substrate processed by PAP showed that residual stress and non-diamond components on the surface after PAP processing were below the detection limit.

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