Study on Fixed-Abrasive Lapping SiC Crystal Substrate Based on Diamond Particle

2014 ◽  
Vol 1017 ◽  
pp. 520-525
Author(s):  
Jian Xiu Su ◽  
Xue Ming Zhang ◽  
Su Fang Fu ◽  
Song Zhan Fan ◽  
Zhen Ling Liu
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Diamond Particle ◽  
Sample Surface ◽  
Single Crystal Substrate ◽  
Study Results ◽  
Surface Flatness ◽  
Crystal Substrate ◽  
Fixed Abrasive ◽  
Free Abrasive

Silicon carbide substrate has been widely used in semiconductor lighting (LED), integrated circuit and microelectronic, optoelectronic devices. According to the former study, a series of the fixed abrasive lapping platen has been developed. The material removal rate (MRR), surface roughness and surface flatness of lapping SiC single crystal substrate (0001) C surface are studied using fixed abrasive lapping. Compared with the results of the free abrasive lapping, the surface flatness of SiC single crystal substrate (0001) C surface after lapping with the fixed abrasive lapping is better than that of the free abrasive lapping, the MRR of lapping with the fixed abrasive lapping platen is higher than that of the free abrasive lapping and the surface roughness (Ra) of lapping with the fixed abrasive lapping is lower than that of the free abrasive lapping. The study results show that there are some scratches on the sample surface after lapping with the fixed abrasive lapping. There are some hills and pits on the sample surface after lapping with the free abrasive, but without scratches. The height difference of the surface profile lapping with the free abrasive is much larger than that of fixed abrasive lapping. The research results can provide a reference for studying the fixed abrasive lapping platen, the lapping process and lapping mechanism.

Study on 6H-SiC Crystal Substrate (0001) C Surface in FA-CMP Based on Diamond Particle

2015 ◽  
Vol 727-728 ◽  
pp. 244-247
Author(s):  
Zhu Qing Zhang ◽  
Kang Lin Xing
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Diamond Particle ◽  
Mechanical Polishing ◽  
Crystal Substrate ◽  
Fixed Abrasive ◽  
Free Abrasive

Through experimental study on the role of the free abrasive in chemical mechanical polishing, in this paper, four different types of abrasive which were chosen were used for the research of material removal rate(MRR) and surface quality of SiC single crystal . Finally ,Diamond abrasive which is considered was the most suitable for chemical mechanical polishing(CMP) abrasive of SiC Crystal Substrate. With diamond Particle polish pad polishing, it is draw a comparison result on the influence of the free abrasive and consolidation abrasive for the material removal rate and surface quality of 6H-SiC. The results showed that: the MRR is 140nm / min, the material removal rate if fixed abrasive chemical mechanical polishing(FA-CMP) more than three times that of traditional CMP, fixed abrasive chemical mechanical polishing pad, are involved in a large proportion of micro abrasive cutting, can greatly improve the material removal efficiency. And results from the test procedure, the FA-CMP surface has scratches after more technical problems for the polishing pad, the surface damage is relatively free of abrasive chemical mechanical polishing is more serious.

An Experimental Study of the Polishing Process for MgO Single Crystal Substrate

2007 ◽  
Vol 329 ◽  
pp. 225-230 ◽  
Author(s):  
Ke Wang ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
Ning Hui Wang
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Removal Rate ◽  
Structural Characteristics ◽  
Chemical Properties ◽  
Single Crystal Substrate ◽  
Polishing Process ◽  
Crystal Substrate ◽  
Substrate Surfaces ◽  
Polishing Efficiency

In order to obtain ultra-smooth and damage free substrate surfaces for MgO single-crystal substrate with high polishing efficiency, an experimental investigation based on systemically designed polishing experiments are presented and discussed. Considering the structural characteristics and chemical properties of the MgO single crystal, the experiments use a polishing slurry containing SiO2 abrasives so that the process is performed under a combination of mechanical and chemical actions. The effects of the polishing process parameters, such as polishing pressure, rotational speed of polishing plate, and the flow rate and concentration of the polishing slurry, on the surface roughness and material removal rate (MRR) are analyzed. Finally, a recommendation is made for selecting the appropriate polishing parameters for MgO single crystal substrate, based on which a surface roughness of 0.3nm can be achieved on the MgO substrate in 20min of polishing time.

Microstructure and enhanced in-plane ferroelectricity of Ba0.7Sr0.3TiO3 thin films grown on MgAl2O4 (001) single-crystal substrate

2006 ◽  
Vol 89 (23) ◽  
pp. 232906 ◽  
Author(s):  
X. Y. Zhou ◽  
T. Heindl ◽  
G. K. H. Pang ◽  
J. Miao ◽  
R. K. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Effect of r-Al2O3 Single-Crystal Substrate on Growth of Ti1– xVxO2 Particles under Hydrothermal Conditions

2020 ◽  
Vol 65 (3) ◽  
pp. 299-304
Author(s):  
O. N. Makarevich ◽  
A. V. Ivanov ◽  
A. I. Gavrilov ◽  
A. M. Makarevich ◽  
O. V. Boytsova
Keyword(s):  
Single Crystal ◽  
Single Crystal Substrate ◽  
Hydrothermal Conditions ◽  
Crystal Substrate

scholarly journals Donor/Acceptor Photovoltaic Cells Fabricated on p-Doped Organic Single-Crystal Substrates

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2068 ◽  
Author(s):  
Yusuke Yabara ◽  
Seiichiro Izawa ◽  
Masahiro Hiramoto
Keyword(s):  
Single Crystal ◽  
Photovoltaic Cells ◽  
Photocurrent Density ◽  
Iron Chloride ◽  
Single Crystal Substrate ◽  
Organic Single Crystal ◽  
Crystal Substrate ◽  
Donor Acceptor ◽  
Doping Technique ◽  
P Type

In this study, the operation of donor/acceptor photovoltaic cells fabricated on homoepitaxially grown p-doped rubrene single-crystal substrates is demonstrated. The photocurrent density is dominated by the sheet conductivity (σ□) of the p-type single-crystal layer doped to 100 ppm with an iron chloride (Fe2Cl6) acceptor. A 65 μm thick p-type rubrene single-crystal substrate is expected to be required for a photocurrent density of 20 mA·cm−2. An entire bulk doping technique for rubrene single crystals is indispensable for the fabrication of practical organic single-crystal solar cells.

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