Fabrication of Ni-Based Anode Supported SOFCs by Aqueous Tape Casting

2008 ◽  
Vol 368-372 ◽  
pp. 284-286 ◽  
Author(s):  
Ye Fan Wu ◽  
Hua Long Chen ◽  
Zu Zhi Huang ◽  
Liang Cheng ◽  
Ling Hong Luo
Keyword(s):  
Tape Casting ◽  
High Density ◽  
Sintering Behavior ◽  
Uniform Microstructure

In this paper, the sintering behavior of Ni/YSZ anode and YSZ electrolytes fabricated by aqueous tape casting were studied. This study involved tape casing of Ni/YSZ (8 mol% Y2O3 stabilized ZrO2) anode, and co-sintering of anode supports and electrolytes. At last, thickness of 140 mm (after sintering) with uniform microstructure and ~30% porosity anode and thickness of ~10 0m (after sintering) with high density (> 95%) and electrolyte were achieved.

A Comparative Study on Sintering Behaviour of Low and High Density Pellets of Ni-YSZ by Electrochemical Impedance Spectroscopy

2017 ◽  
Vol 17 ◽  
pp. 237-245
Author(s):  
P. Kuppusami ◽  
T. Dharini ◽  
Ajith Kumar Soman ◽  
A.M. Kamalan Kirubaharan ◽  
Arul Maximus Rabel
Keyword(s):  
Impedance Spectroscopy ◽  
Electrochemical Impedance ◽  
Sintering Temperature ◽  
Systematic Investigation ◽  
High Density ◽  
Oxygen Atmosphere ◽  
Sintering Behavior ◽  
Low Density ◽  
Oxygen Environment ◽  
Ac Impedance Spectra

In this study, a systematic investigation on in-situ sintering behavior of Ni-YSZ (50: 50wt. %) pellets of density of 4.2 (low density) and 4.9 g/cm3 (high density) in ambient and oxygen environment by impedance spectroscopy is presented. X-ray diffraction indicated the formation of cubic phases of NiO and YSZ. The low density pellet sintered for 16 h showed low content of monoclinic phase when compared to high density pellet. The microstructure of the high density pellet revealed finer and homogenous distribution of Ni in YSZ matrix due to longer sintering duration when compared with the low density pellet. AC impedance spectra were recorded for both low and high density pellets during sintering in ambient and oxygen environment in the temperature range 873-1173 K. The results indicate that for both the pellets, the impedance values decreased when sintering temperature increased from 873 to 1173 K in both ambient and oxygen environment. However, the impedance was low while sintering in oxygen atmosphere than in ambient. Besides these observation, impedance of the high density pellet was much lower than that of the low density pellet at all sintering temperature in both ambient and oxygen atmosphere. While the impedance decreased with increasing sintering temperature, the capacitance increased slowly in both the ambient and oxygen atmosphere. The change in the impedance behavior due to grain interior and grain boundaries is explained in relation with the microstructural changes that occur during sintering in different environments.

Sintering behavior and refining grains of high density tin doped indium oxide targets with low tin oxide content

2015 ◽  
Vol 27 (4) ◽  
pp. 3298-3304 ◽  
Author(s):  
Jiwen Xu ◽  
Ling Yang ◽  
Hua Wang ◽  
Guisheng Zhu ◽  
Huarui Xu ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Tin Oxide ◽  
High Density ◽  
Sintering Behavior ◽  
Oxide Content

Cofiring behavior of multilayer inductors based on substituted Y- and M-type hexagonal ferrites

2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000659-000663
Author(s):  
S. Bierlich ◽  
J. T[ouml]pfer ◽  
S. Barth ◽  
B. Pawlowski ◽  
J. M[uuml]ller ◽  
...  
Keyword(s):  
Low Temperature ◽  
Tape Casting ◽  
Magnetic Behavior ◽  
Sintering Behavior ◽  
Hexagonal Ferrites ◽  
Temperature Sinter ◽  
Crystalline Anisotropy ◽  
Zn Concentration ◽  
Ti Substitution ◽  
Soft Ferrites

Sinter-active soft ferrites with adequate permeability profiles are required for the fabrication of multilayer ferrite inductors (MLFI). For MLFI fabrication, a Low Temperature Ceramic Co-firing (LTCC) process is used. Substituted hexagonal ferrites of Y-, and M-type represent an important family of soft ferrites which might operate at high-frequency conditions up to 2 GHz. However, for Ag-based multilayer inductor applications a sinter process at 900°C is required. Low-temperature sinter-ability is provided by the use of sub-micron powders and/or sintering additives. Substituted Y-type hexagonal ferrites Ba2Co2-x-yZnxCuyFe12O22 were obtained after sintering at 1000°C. Substitution of Cu for Co improved the low-temperature sintering behavior. The addition of 5wt.% Bi2O3 guarantees almost complete densification at 900°C. The saturation magnetization and permeability are significantly affected by the Zn-concentration. A maximum permeability of μ′ = 10 and cut-off frequency fg~2GHz was observed for a ferrite with y = 0.4. Co/Ti-substituted M-type BaFe12-2yCoyTiyO19 ferrites can also be used for multilayer inductors. The magneto-crystalline anisotropy changes from uniaxial to planar upon Co/Ti-substitution, and ferrites with y≥1.1 exhibit soft magnetic behavior. Ferrite powders were prepared at 1000°C. The addition of a sintering aid shifts the temperature of maximum shrinkage down to below 900°C and dense samples were obtained after firing at 900°C. A permeability of μ′ = 16 and a resonance frequency of 1 GHz was observed. Substituted M-type ferrites are stable during co-firing at 900°C and show no sign of decomposition, i.e. these materials are LTCC-compatible. Ferrite tapes were prepared by tape casting and multilayer structures were fabricated by screen printing, stacking, lamination and final co-firing. Firing was performed at LTCC conditions i.e. 900°C. We report on the co-firing behavior, microstructure and permeability of monolithic laminates. It is shown, that hexagonal Co2/Zn2Y- and Co/Ti-M-type ferrites are excellent magnetic materials for multilayer inductors.

Preparation of high-density garnet thin sheet electrolytes for all-solid-state Li-Metal batteries by tape-casting technique

2019 ◽  
Vol 791 ◽  
pp. 923-928 ◽  
Author(s):  
Kangning Gao ◽  
Minghui He ◽  
Yiqiu Li ◽  
Yipeng Zhang ◽  
Jun Gao ◽  
...  
Keyword(s):  
Solid State ◽  
Thin Sheet ◽  
Tape Casting ◽  
High Density ◽  
Casting Technique

Fabrication of high-density In2Ga2ZnO7 sputtering target with uniform microstructure

2021 ◽  
Vol 121 ◽  
pp. 105342
Author(s):  
Jiang-An Liu ◽  
Chen-Hui Li ◽  
Yang Zou ◽  
Liang Hu ◽  
Yu-Sheng Shi
Keyword(s):  
High Density ◽  
Uniform Microstructure

Wet forming, sintering behavior, and dielectric properties of BaTi0.8Zr0.2O3

1996 ◽  
Vol 11 (12) ◽  
pp. 3071-3076 ◽  
Author(s):  
Yoshihiro Hirata ◽  
Takahiro Kawazoe
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Lattice Parameter ◽  
Sintering Behavior ◽  
Ferroelectric State ◽  
Uniform Microstructure ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Diffuse Phase

Density, grain size, lattice parameter, and dielectric properties were measured on BaTi0.8Zr0.2O3 sintered at 1100–1600 °C. The hydrothermally prepared BaTi0.8Zr0.2O3 particles of 128 nm diameter were consolidated by filtration of 2-methoxyethanol suspensions and subsequently compressed by isostatic pressing under a pressure of 294 MPa to form a uniform microstructure of high density (52% of the theoretical density). These green compacts were sintered to a relative density of above 99% in the temperature range from 1350 to 1600 °C where rapid grain growth to above 30 μm occurred. Increase of sintering temperature was accompanied by the increase of lattice parameter and dielectric constant of BaTi0.8Zr0.2O3 at room temperature. The sintered BaTi0.8Zr0.2O3 showed a diffuse phase transition from paraelectric (higher temperature) to ferroelectric state (lower temperature) at 32 °C.

Pressureless Sintering and Properties of Boron Carbide-Titanium Diboride Composites by In Situ Reaction

2012 ◽  
Vol 525-526 ◽  
pp. 321-324 ◽  
Author(s):  
Ai Dong Liu ◽  
Ying Jie Qiao ◽  
Ying Ying Liu
Keyword(s):  
Flexural Strength ◽  
Boron Carbide ◽  
Titanium Diboride ◽  
Sintering Temperature ◽  
High Density ◽  
Sintering Behavior ◽  
Pressureless Sintering ◽  
In Situ Reaction

Pressureless sintering to obtain high density boron carbide-titanium diboride composites by in-situ reaction was studied. Pressureless sintering behavior of this material was investigated between 1800-2150 .The effects of composition, sintering temperature and tine were examined. Density up to 98.5% T.D. was reached at 2150. Maximum values of flexural strength (502 MPa), hardness (33 Gpa) and fracture toughnes (4.6 MPa·m1/2) were observed in the specimens containing 15 vol.% TiB2.

scholarly journals The Effect of Mo and Dispersoids on Microstructure, Sintering Behavior, and Mechanical Properties of W-Mo-Ni-Fe-Co Heavy Tungsten Alloys

Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 111 ◽  
Author(s):  
Chun-Liang Chen ◽  
Sutrisna
Keyword(s):  
High Hardness ◽  
Sintering Behavior ◽  
Binder Phase ◽  
Tungsten Alloys ◽  
Dispersed Particles ◽  
Uniform Microstructure ◽  
Milling Method ◽  
Oxide Particles ◽  
Growth Promoting ◽  
Y2o3 Addition

W-Mo-Ni-Fe-Co heavy tungsten alloys were fabricated by mechanical alloying. The effects of Mo and oxide dipsersoids on the characteristics and properties of the model alloys were investigated. In this study, the W-Mo matrix and γ-Ni(Fe,Co) binder phase were further synthesized with Y2O3 by a secondary ball milling method. The results suggest that the microstructure and sintering behavior of the model alloys are strongly influenced by the dispersed oxide particles. The model alloys with the Y2O3 addition demonstrate grain refinement and uniform microstructure. The dispersed particles could act as an inhibitor for diffusion of tungsten atoms and grain growth, promoting the formation of solid state during sintering. Consequently, good densification, high hardness, and elastic modulus of alloys can be achieved.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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