Bistable Technology in Flat Panel Display: Principle and Progress

2010 ◽  
Vol 428-429 ◽  
pp. 206-211 ◽  
Author(s):  
Zi Qiang Huang
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Liquid Crystals ◽  
Thin Film Transistor ◽  
Manufacturing Cost ◽  
High Grade ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Display Devices ◽  
Light Interference

Active matrices often related with high grade display devices, due to application of the storage elements, typically thin film transistor (TFT). Because of the complex procedures in the manufacturing TFT, investment of the high value manufacturing equipments and clarification plants is necessary, hence increasing the manufacturing cost of the flat panel, and more importantly, causing the pollution of water and air. As the contribution of TFT array merely exists in supplying storage function for the pixels of the display panel, large efforts have been made to find suitable cells that have bistable effect, so as to substitute the effect of TFT. As the bistable cell is just the storage pixel, one could construct a bistable cell to skip the needs of TFT active matrices. The paper is to introduce currently available bistable display devices in the following field: liquid crystal bistable displays with cholesteric liquid crystals, which is an example to introduce the bistable technology; iMod display devices based on mechanic induced bistable and light interference, which shows the possibility to construct bistable display; and the display based on solid powder movement in air or in vacuum, so called liquid powder displays, which shows how to improve the existed display.

Electrically active organic and polymeric materials for thin-film-transistor technologies

1996 ◽  
Vol 11 (6) ◽  
pp. 1581-1592 ◽  
Author(s):  
Andrew J. Lovinger ◽  
Lewis J. Rothberg
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Polymeric Materials ◽  
Drain Current ◽  
Current Status ◽  
Flat Panel Display ◽  
Semiconducting Materials ◽  
Flat Panel ◽  
Technological Potential ◽  
Potential Alternative

Organic and polymeric materzials have seen a tremendous growth in research in the last five years as potential electroactive elements in thin-film-transistor (TFT) applications. These are driven by the increasing interest in flat-panel-display applications, for which organic and polymeric materials offer strong promise in terms of properties, processability, cost, and compatibility with eventual lightweight, flexible plastic displays. In this review we summarize the current status of our knowledge on the science of these organic and polymeric semiconducting materials. Most of these are based on linear thiophenes, especially a-hexathienyl, which has elicited by far the most attention. Mobility values in the 10−2–10−1 cm2/Vs and especially source-drain current on/off ratios of up to 106 make this a highly promising potential alternative to amorphous silicon. Other thienyl compounds are also discussed, as are polymeric analogues. A brief discussion of technological potential, limitations, and problems that need to be overcome is given at the end.

scholarly journals Optical Detection of Protrusive Defects on Thin-film Transistor

2018 ◽  
Author(s):  
Fu-Ming Tzu ◽  
Jung-Hua Chou
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Cost Effective ◽  
Liquid Crystal Displays ◽  
Maximum Error ◽  
Color Filter ◽  
Depth Of Field ◽  
Fast Method ◽  
Flat Panel Display ◽  
Flat Panel

Protrusive defects on the color filter of thin-film transistor (TFT) liquid crystal displays (LCDs) frequently damage the valuable photomask. An fast method using side-view illuminations associated with digital charge-couple devices (CCDs) to detect the protrusive defect in the four substrates, which are the black matrix (BM), red, green, and blue. Between the photomask and substrate, the depth of field (DOF) is normally 300 μm for the proximity-type aligner; we select the four substrates to evaluate the detectability in the task. The experiment is capable of detecting measurements of 300 μm and even lower than 100 μm can be assessed successfully. The maximum error of the measurement is within 6% among the four samples. Furthermore, the uncertainty analysis of three standard deviations is conducted. Thus, the method is cost-effective to prevent damage for valuable photomasks in the flat panel display industry.

Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB06 ◽  
Author(s):  
Tong-Hun Hwang ◽  
Ik-Seok Yang ◽  
Oh-Kyong Kwon ◽  
Min-Ki Ryu ◽  
Choon-Won Byun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Flat Panel Display ◽  
Zinc Oxide Thin Film ◽  
Flat Panel ◽  
Indium Gallium

Morphology Evolution and Luminescence Properties of YF3: Sm Nano-/Microcrystals

2012 ◽  
Vol 463-464 ◽  
pp. 112-118
Author(s):  
Feng Tao ◽  
Geng Zhu ◽  
Zhi Jun Wang ◽  
Feng Pan ◽  
Yu Feng Sun ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Growth Mechanism ◽  
Room Temperature ◽  
Red Light ◽  
Environmentally Friendly ◽  
Morphology Evolution ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Display Devices ◽  
Potential Applications

Abstract. Recently, there has been increasting interest in the doping of nano-/microcrystal hosts with Sm3+. However, very few examples of Sm3+doped YF3-based nanophosphors have been reported. In this paper, a variety of uniform YF3:Sm nano-/microcrystals have been successfully prepared by a facile, effective, and environmentally friendly hydrothermal method. The morphology evolution process has been investigated by quenching the reaction at different time. Based on the results, a possible growth mechanism is presented in detail. The as-obtained YF3:Sm nano-/microcrystals show strong yellow and red light emissions under room temperature, which is quite different from those reported previously and might find potential applications in fields such as light phosphor powers and advanced flat panel display devices.

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