Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator
Keyword(s):
Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.
2004 ◽
Vol 43
(4B)
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pp. 2036-2040
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2007 ◽
Vol 46
(6A)
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pp. 3324-3329
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2008 ◽
Vol 47
(2)
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pp. 824-832
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2011 ◽
Vol 50
(10R)
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pp. 106701
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2015 ◽
Vol 32
(11)
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pp. 117302
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2011 ◽
Vol 50
(10)
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pp. 106701
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2000 ◽
Vol 18
(1)
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pp. 533
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2008 ◽
Vol 2
(1)
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pp. 56-61
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