Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography
Keyword(s):
We calculated thehydrogen silsesquioxane (HSQ) resistprofiles with different contrast developers (γ from 1.9 to 8.1) to reveal the effect of resist contrast on pattern resolution performance. Based on our home-made development modeling, the suitable energy deposition distribution (EDD) regions for various developers were determined by evaluating the quality of simulated patterns. High contrast TMAH 2.3 wt%/NaCl 4 wt% developer was demonstrated that it is suitable to form very fine dot arrays with a size of 7 nm. Low contrast developer has the limitation of forming fine pattern with sufficient height. The simulation results indicated that increasing developer contrast is benefit to improve pattern resolution.
1976 ◽
Vol 34
◽
pp. 572-573
Keyword(s):
Keyword(s):
1973 ◽
Vol 31
◽
pp. 302-303
1968 ◽
Vol 26
◽
pp. 326-327
1990 ◽
Vol 48
(3)
◽
pp. 14-15
Keyword(s):
Keyword(s):