Deposition and Characterization of Mg Doped CuCrO2 Films by DC Magnetron Sputtering

2014 ◽  
Vol 609-610 ◽  
pp. 255-259
Author(s):  
Su Zhen Wu ◽  
Zan Hong Deng ◽  
Wei Wei Dong ◽  
Jing Zhen Shao ◽  
Xiao Dong Fang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Single Phase ◽  
Nitrogen Atmosphere ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Light Region ◽  
Mg Doped

Single-phase delafossite type Mg-doped copper-chromium oxide thin films were prepared on c-sapphire, quartz glass and n-Si substrates by direct current (DC) magnetron sputtering using a CuCr0.97Mg0.03O2 (CCMO) ceramic target, followed by post annealing at 800 °C in a nitrogen atmosphere. X-ray diffraction (XRD) revealed that the film deposited on c-plane sapphire was highly c-axis oriented, while the films on quartz glass and Si only showed weak (0 1 2) peak. The transparencies of the films on c-sapphire and quartz glass were over 60 % in the visible light region and the direct bandgap of both films were estimated to be 3.16 eV. The in-plane resistivities were 0.24 Ωcm and 7.68 Ωcm for the crystallized films on c-sapphire and quartz glass, respectively. The electrical property of the formed CCMO/n-Si junction was found to be rectifying with a ratio of ~15 at ±2 V.

Characterization of Nanocones Grown During DC Magnetron Sputtering of an ITO Target

2005 ◽  
Vol 879 ◽  
Author(s):  
J.F. Conley ◽  
D. McClain ◽  
J. Jiao ◽  
W. Gao ◽  
D. Evans ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Si Substrates ◽  
Turn On ◽  
Temperature Method ◽  
Conductive Film ◽  
Spherical Ball

AbstractA low temperature method for uniform growth of In2O3 nanostructures on Si wafers that does not require separate catalyst materials or template-assistance is investigated. Nanostructures are uniformly deposited on either bare or SiO2 thin film coated Si substrates via DC magnetron sputtering at 200-400°C using a 90% In2O3 / 10% SnO2 (ITO) target. The nanostructures are approximately 500 nm long, sit atop an accompanying underlying 100 nm conductive film, and are conically shaped, with a diameter of about 80 nm at the base, tapering to a point that is capped with a spherical “ball”. X-ray diffraction (XRD) indicates a cubic In2O3 phase. Field emission from the tips is observed at a base pressure of 10-8 Torr with turn-on fields in a range between 45-75 V/cm and threshold fields from 64-105 V/cm. Nanocone growth is investigated with respect to O2 and Ar flow rates, temperature, power, pressure, wafer rotation, and time.

Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors

2006 ◽  
Vol 153 (2) ◽  
pp. G164 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Kwang-Min Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Tantalum Nitride ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Thin Film Resistors

Deposition And Characterization of CNx Films

1994 ◽  
Vol 339 ◽  
Author(s):  
X. T. Cui ◽  
Z. H. Zhang ◽  
Q. Y. Chen ◽  
F. Romero-Borja ◽  
J. R. Liu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Ir Spectroscopy ◽  
Magnetron Sputtering ◽  
Annealing Effect ◽  
Single Bond ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Bonding Properties

ABSTRACTCNx films with x around 1.0 have been made by inverted cylindrical DC magnetron sputtering. RBS, XPS, IR spectroscopy, ERD and SEM were used to characterize the composition and bonding properties of the films, while X-ray diffraction was used for crystal structure determination. XPS data indicated the existence of the tetrahedral C3N4 phase in the CNx films, which was consistent with the C-N single bond suggested by IR spectra. The annealing effect on CNx films will also be discussed.

Structural Characterization of Ru-B 4c Multilayers Fabricated By Magnetron Sputtering

1990 ◽  
Vol 208 ◽  
Author(s):  
D. G. Stearns ◽  
R. S. Rosen ◽  
S. P. Vernon
Keyword(s):  
Magnetron Sputtering ◽  
Normal Incidence ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Detailed Structure ◽  
X Ray ◽  
Transmission Electron ◽  
Ultrathin Layers ◽  
Deposition Conditions

ABSTRACTMultilayer structures composed of alternating, ultrathin layers of Ru and B4C have been fabricated using DC magnetron sputtering. These multilayers are potentially important as normal incidence x-ray reflectors at wavelengths above the boron K-absorption edge at 65Å. The detailed structure of the layers has been characterized using x-ray diffraction and high-resolution transmission electron microscopy. It is found that, under optimized deposition conditions, continuous layers can be grown that have smooth and abrupt interfaces. The normal incidence reflectivity at x-ray wavelengths of ∼70Å has been measured, and values as high as 20% have been obtained.

Characterization of Ti–Zr–V thin films deposited by DC and unipolar pulsed DC magnetron sputtering

Vacuum ◽  
2021 ◽  
Vol 188 ◽  
pp. 110200
Author(s):  
Sihui Wang ◽  
Wei Wei ◽  
Yonghao Gao ◽  
Haibin Pan ◽  
Yong Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Pulsed Dc Magnetron Sputtering

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Deposition and Characterization of Aluminium Thin film Coatings using DC Magnetron Sputtering Process

2018 ◽  
Vol 5 (1) ◽  
pp. 2696-2704 ◽  
Author(s):  
M. Muralidhar Singh ◽  
G. Vijaya ◽  
M.S. Krupashankara ◽  
B.K. Sridhara ◽  
T.N. Shridhar
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Film Coatings ◽  
Thin Film Coatings

scholarly journals Fabrication and Characterization of Al/NiO Energetic Nanomultilayers

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
YiChao Yan ◽  
Wei Shi ◽  
HongChuan Jiang ◽  
Jie Xiong ◽  
WanLi Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Metallic Oxide ◽  
Promising Candidate ◽  
X Ray ◽  
Thermal Boundary Conductance ◽  
Fabrication And Characterization

The redox reaction between Al and metallic oxide has its advantage compared with intermetallic reaction and Al/NiO nanomutlilayers are a promising candidate for enhancing the performance of energetic igniter. Al/NiO nanomutlilayers with different modulation periods are prepared on alumina substrate by direct current (DC) magnetron sputtering. The thicknesses of each period are 250 nm, 500 nm, 750 nm, 1000 nm, and 1500 nm, respectively, and the total thickness is 3 μm. The X-ray diffraction (XRD) and scanning electron microscope (SEM) results of the as-deposited Al/NiO nanomutlilayers show that the NiO films are amorphous and the layered structures are clearly distinguished. The X-ray photoelectron spectroscopy (XPS) demonstrates that the thickness of Al2O3increases on the side of Al monolayer after annealing at 450°C. The thermal diffusion time becomes greater significantly as the amount of thermal boundary conductance across the interfaces increases with relatively smaller modulation period. Differential scanning calorimeter (DSC) curve suggests that the energy release per unit mass is below the theoretical heat of the reaction due to the nonstoichiometric ratio between Al and NiO and the presence of impurities.

Effect of Methane Flow Rate on the Microstructural and Mechanical Properties of Silicon Carbide Thin Films Deposited by Reactive DC Magnetron Sputtering

2010 ◽  
Vol 66 ◽  
pp. 35-40 ◽  
Author(s):  
Erdem Baskurt ◽  
Tolga Tavşanoğlu ◽  
Yücel Onüralp
Keyword(s):  
Magnetron Sputtering ◽  
High Speed ◽  
Profile Analysis ◽  
High Speed Steel ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
Methane Flow Rate ◽  
Surface Morphologies ◽  
Sic Films

SiC films were deposited by reactive DC magnetron sputtering of high purity (99.999%) Si target. 3 types of substrates, AISI M2 grade high speed steel, glass and Si (100) wafer were used in each deposition. The effect of different CH4 flow rates on the microstructural properties and surface morphologies were characterized by cross-sectional FE-SEM (Field-Emission Scanning Electron Microscope) observations. SIMS (Secondary Ion Mass Spectrometer) depth profile analysis showed that the elemental film composition was constant over the whole film depth. XRD (X-Ray Diffraction) results indicated that films were amorphous. Nanomechanical properties of SiC films were also investigated.

Sign in / Sign up

Export Citation Format

Share Document