Characterization of Nanocones Grown During DC Magnetron Sputtering of an ITO Target

2005 ◽  
Vol 879 ◽  
Author(s):  
J.F. Conley ◽  
D. McClain ◽  
J. Jiao ◽  
W. Gao ◽  
D. Evans ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Si Substrates ◽  
Turn On ◽  
Temperature Method ◽  
Conductive Film ◽  
Spherical Ball

AbstractA low temperature method for uniform growth of In2O3 nanostructures on Si wafers that does not require separate catalyst materials or template-assistance is investigated. Nanostructures are uniformly deposited on either bare or SiO2 thin film coated Si substrates via DC magnetron sputtering at 200-400°C using a 90% In2O3 / 10% SnO2 (ITO) target. The nanostructures are approximately 500 nm long, sit atop an accompanying underlying 100 nm conductive film, and are conically shaped, with a diameter of about 80 nm at the base, tapering to a point that is capped with a spherical “ball”. X-ray diffraction (XRD) indicates a cubic In2O3 phase. Field emission from the tips is observed at a base pressure of 10-8 Torr with turn-on fields in a range between 45-75 V/cm and threshold fields from 64-105 V/cm. Nanocone growth is investigated with respect to O2 and Ar flow rates, temperature, power, pressure, wafer rotation, and time.

Deposition And Characterization of CNx Films

1994 ◽  
Vol 339 ◽  
Author(s):  
X. T. Cui ◽  
Z. H. Zhang ◽  
Q. Y. Chen ◽  
F. Romero-Borja ◽  
J. R. Liu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Ir Spectroscopy ◽  
Magnetron Sputtering ◽  
Annealing Effect ◽  
Single Bond ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Bonding Properties

ABSTRACTCNx films with x around 1.0 have been made by inverted cylindrical DC magnetron sputtering. RBS, XPS, IR spectroscopy, ERD and SEM were used to characterize the composition and bonding properties of the films, while X-ray diffraction was used for crystal structure determination. XPS data indicated the existence of the tetrahedral C3N4 phase in the CNx films, which was consistent with the C-N single bond suggested by IR spectra. The annealing effect on CNx films will also be discussed.

Structural Characterization of Ru-B 4c Multilayers Fabricated By Magnetron Sputtering

1990 ◽  
Vol 208 ◽  
Author(s):  
D. G. Stearns ◽  
R. S. Rosen ◽  
S. P. Vernon
Keyword(s):  
Magnetron Sputtering ◽  
Normal Incidence ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Detailed Structure ◽  
X Ray ◽  
Transmission Electron ◽  
Ultrathin Layers ◽  
Deposition Conditions

ABSTRACTMultilayer structures composed of alternating, ultrathin layers of Ru and B4C have been fabricated using DC magnetron sputtering. These multilayers are potentially important as normal incidence x-ray reflectors at wavelengths above the boron K-absorption edge at 65Å. The detailed structure of the layers has been characterized using x-ray diffraction and high-resolution transmission electron microscopy. It is found that, under optimized deposition conditions, continuous layers can be grown that have smooth and abrupt interfaces. The normal incidence reflectivity at x-ray wavelengths of ∼70Å has been measured, and values as high as 20% have been obtained.

Deposition and Characterization of Mg Doped CuCrO2 Films by DC Magnetron Sputtering

2014 ◽  
Vol 609-610 ◽  
pp. 255-259
Author(s):  
Su Zhen Wu ◽  
Zan Hong Deng ◽  
Wei Wei Dong ◽  
Jing Zhen Shao ◽  
Xiao Dong Fang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Single Phase ◽  
Nitrogen Atmosphere ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Light Region ◽  
Mg Doped

Single-phase delafossite type Mg-doped copper-chromium oxide thin films were prepared on c-sapphire, quartz glass and n-Si substrates by direct current (DC) magnetron sputtering using a CuCr0.97Mg0.03O2 (CCMO) ceramic target, followed by post annealing at 800 °C in a nitrogen atmosphere. X-ray diffraction (XRD) revealed that the film deposited on c-plane sapphire was highly c-axis oriented, while the films on quartz glass and Si only showed weak (0 1 2) peak. The transparencies of the films on c-sapphire and quartz glass were over 60 % in the visible light region and the direct bandgap of both films were estimated to be 3.16 eV. The in-plane resistivities were 0.24 Ωcm and 7.68 Ωcm for the crystallized films on c-sapphire and quartz glass, respectively. The electrical property of the formed CCMO/n-Si junction was found to be rectifying with a ratio of ~15 at ±2 V.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

scholarly journals Fabrication and Characterization of Al/NiO Energetic Nanomultilayers

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
YiChao Yan ◽  
Wei Shi ◽  
HongChuan Jiang ◽  
Jie Xiong ◽  
WanLi Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Metallic Oxide ◽  
Promising Candidate ◽  
X Ray ◽  
Thermal Boundary Conductance ◽  
Fabrication And Characterization

The redox reaction between Al and metallic oxide has its advantage compared with intermetallic reaction and Al/NiO nanomutlilayers are a promising candidate for enhancing the performance of energetic igniter. Al/NiO nanomutlilayers with different modulation periods are prepared on alumina substrate by direct current (DC) magnetron sputtering. The thicknesses of each period are 250 nm, 500 nm, 750 nm, 1000 nm, and 1500 nm, respectively, and the total thickness is 3 μm. The X-ray diffraction (XRD) and scanning electron microscope (SEM) results of the as-deposited Al/NiO nanomutlilayers show that the NiO films are amorphous and the layered structures are clearly distinguished. The X-ray photoelectron spectroscopy (XPS) demonstrates that the thickness of Al2O3increases on the side of Al monolayer after annealing at 450°C. The thermal diffusion time becomes greater significantly as the amount of thermal boundary conductance across the interfaces increases with relatively smaller modulation period. Differential scanning calorimeter (DSC) curve suggests that the energy release per unit mass is below the theoretical heat of the reaction due to the nonstoichiometric ratio between Al and NiO and the presence of impurities.

EPITAXIAL GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON BY R.F. MAGNETRON SPUTTERING

1991 ◽  
Vol 05 (27) ◽  
pp. 1829-1835 ◽  
Author(s):  
Q.X. SU ◽  
L. LI ◽  
Y.Y. ZHAO ◽  
Y.Z. ZHANG ◽  
P. XU
Keyword(s):  
Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Processing Conditions ◽  
Full Width ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Si Substrates ◽  
Zirconia Films ◽  
Scanning Electron

Yttria-stabilized Zirconia(YSZ) films were deposited on (100)Si substrates by R.F. magnetron sputtering method. X-ray diffraction analysis showed that the best YSZ films were cubic in structure and was grown epitaxially with (100) orientation. The (200) peak of YSZ films was 0.8° of the full width at half of the maximum, X-ray diffraction based on Seemann-Bohlin focusing geometry showed no peaks. The morphology of the YSZ films was observed by scanning electron microscopy. The effects of the processing conditions (such as substrate temperature, oxygen partial pressure, etc.) on the structure of the film were also discussed.

The Study of Al-N Codoped ZnO Thin Films Prepared by DC Magnetron Sputtering

2015 ◽  
Vol 754-755 ◽  
pp. 591-594
Author(s):  
Haslinda Abdul Hamid ◽  
M.N. Abdul Hadi
Keyword(s):  
Magnetron Sputtering ◽  
Structural Investigation ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oxygen Gas ◽  
Film Roughness

The codoped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 °C and 600 °C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by scanning electron microscopy (SEM), atomic force microscopy and x-ray diffraction (XRD). Film roughness and grain shape were found to be correlated with the annealing temperatures.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

scholarly journals Synthesis Growth and Characterization of Mn doped La1.8Sr0.20CuO4

2011 ◽  
Vol 8 (1) ◽  
pp. 97-100
Author(s):  
Manish Verma ◽  
N. P. Lalla ◽  
D. M. Phase ◽  
V. K. Ahire
Keyword(s):  
Electron Microscopy ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Phase Purity ◽  
Reaction Method ◽  
X Ray ◽  
Temperature Method ◽  
Mn Doped ◽  
Scanning Electron

Polycrystalline samples of La1.8Sr0.20Cu1-yMnyO4 (0≤y≤0.15) were synthesized by solid state reaction method. The phase purity was confirmed by powder X-ray diffraction. The scanning electron microscopy was done on the La1.8Sr0.20Cu1-yMnyO4 (0≤y≤0.15) samples. The superconductivity and Transition temperature were studied by four probe resistivity temperature method. The transition temperatures were measured nearly 37 k and were unchanged on Mn doping at Cu site in La1.8Sr0.20CuO4.

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