Effect of Methane Flow Rate on the Microstructural and Mechanical Properties of Silicon Carbide Thin Films Deposited by Reactive DC Magnetron Sputtering

2010 ◽  
Vol 66 ◽  
pp. 35-40 ◽  
Author(s):  
Erdem Baskurt ◽  
Tolga Tavşanoğlu ◽  
Yücel Onüralp
Keyword(s):  
Magnetron Sputtering ◽  
High Speed ◽  
Profile Analysis ◽  
High Speed Steel ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
Methane Flow Rate ◽  
Surface Morphologies ◽  
Sic Films

SiC films were deposited by reactive DC magnetron sputtering of high purity (99.999%) Si target. 3 types of substrates, AISI M2 grade high speed steel, glass and Si (100) wafer were used in each deposition. The effect of different CH4 flow rates on the microstructural properties and surface morphologies were characterized by cross-sectional FE-SEM (Field-Emission Scanning Electron Microscope) observations. SIMS (Secondary Ion Mass Spectrometer) depth profile analysis showed that the elemental film composition was constant over the whole film depth. XRD (X-Ray Diffraction) results indicated that films were amorphous. Nanomechanical properties of SiC films were also investigated.

Optical and Tribological Properties of Silicon Carbide Thin Films Grown by Reactive DC Magnetron Sputtering

2011 ◽  
Vol 484 ◽  
pp. 145-151 ◽  
Author(s):  
Tolga Tavşanoğlu ◽  
Erdem Baskurt ◽  
Yücel Onüralp
Keyword(s):  
Magnetron Sputtering ◽  
High Speed ◽  
High Speed Steel ◽  
Gas Mixture ◽  
Microstructural Properties ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
X Ray ◽  
Sic Coatings ◽  
Sic Films

In this study, SiC films were deposited by reactive DC magnetron sputtering of high purity (99.999%) Si target in Ar/CH4 gas mixture. Three types of substrates, AISI M2 grade high speed steel, glass, and Si (100) were used in each deposition. Films were grown with different compositions at 50 oC and 250 oC by varying (0–50 %) CH4/Ar processing gas ratios. Microstructural properties of SiC films were characterized by cross-sectional FE–SEM (Field–Emission Scanning Electron Microscope) observations. XRD (X–Ray Diffractometer) results indicated that films were amorphous. Friction coefficients as low as 0.1 were obtained from SiC coatings against Al2O3 balls, according to the tribological tests. Optical investigations showed that the transparency and opacity of SiC films could easily be tailored by modifying Si and C concentrations in the coatings.

Effects of Tungsten Addition on Mechanical and Tribological Properties of Carbon Nitride Prepared by DC Magnetron Sputtering

2015 ◽  
Vol 642 ◽  
pp. 24-29 ◽  
Author(s):  
Yan Liang Su ◽  
Yue Feng Lin ◽  
Sun Hui Yao ◽  
Chia Jui Hsu
Keyword(s):  
Magnetron Sputtering ◽  
Tribological Properties ◽  
High Speed ◽  
Carbon Nitride ◽  
Indentation Test ◽  
High Speed Steel ◽  
Xrd Analysis ◽  
Tungsten Content ◽  
Dc Magnetron Sputtering ◽  
Glow Discharge Spectroscopy

Carbon nitride coatings doped with tungsten were deposited on high speed steel disks by unbalanced DC magnetron sputtering using nitrogen-argon mixture gas. The coatings were deposited on three different types of interlayer (Ti, Ti/TiN and Ti/TiC), and the tungsten target current was varied from 0 to 0.9 A. Surface morphology of the coatings were measured by roughness testing and scanning electron microscopy (SEM). In addition, the chemical composition and depth profile were analyzed by X-ray Diffraction (XRD) analysis, Raman spectroscopy, and glow discharge spectroscopy (GDS). Finally, the hardness (H) and elasticity (E) were measured by nanoindentation and a Rockwell indentation test, while the tribological properties were tested using a pin-on-disk tribometer. After all, the coatings were measured by cutting testing of tuning inserts and micro-drillers. It is found that all of the coatings are amorphous and have a thickness of approximately 1.5 μm. Moreover, the nitrogen content is around 30 at%, while the tungsten content varies in the range of 0-9 at%. In addition, the hardness values are in the range of 15-20 GPa and the elasticity varies from 236 to 274 GPa. A good correlation is observed between the wear resistance and the indentation adhesion level. Furthermore, it is found that the hardness is not significantly correlated to the tungsten content and the coatings deposited on the Ti/TiC interlayer have greater adhesion. Finally, the coatings generally have a very low coefficient of friction (0.01-0.3) and a wear coefficient as low as 10-6 mm3/Nm, and the CN/TiC coating reduced 41% and 43% of flank wear in the cutting testing of turning inserts and micro-drillers respectively.

The Effect of Magnetron Co-Sputtering Parameters on the Microhardness of TiZrN Thin Films

2013 ◽  
Vol 791-793 ◽  
pp. 407-410
Author(s):  
Xin Zhao ◽  
Wei Qin ◽  
Guo Dong Zhao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Speed ◽  
High Speed Steel ◽  
Mixed Crystals ◽  
X Ray Diffraction ◽  
Doping Amount ◽  
X Ray

TiZrN thin films have been prepared on high speed steel by using magnetron sputtering. Doping amounts of Zr were adjusted by changing the sputtering time of the Zr target. X-ray diffraction analyses show that TiZrN coatings consist of mixed crystals of TiN, TiZrN phases. The film microhardness first increases and then decreases with the increasing of Zr doping amount. With the same Zr doping amount, the microhardness of the samples will improve with the increasing of doping times.

The Structure and Adhesion of Zr/TiAlN Coatings on High-Speed Steel and Cemented Carbide Substrates

2013 ◽  
Vol 459 ◽  
pp. 46-50 ◽  
Author(s):  
Guang Xian ◽  
Hai Bo Zhao ◽  
Hong Yuan Fan ◽  
Hao Du
Keyword(s):  
High Speed ◽  
High Speed Steel ◽  
Columnar Structure ◽  
Diffraction Peak ◽  
Cemented Carbide ◽  
X Ray Diffraction ◽  
Medium Frequency ◽  
Cross Sectional ◽  
X Ray ◽  
Main Diffraction Peak

Zr/TiAlN coatings as well as single TiAlN coatings were deposited on high-speed steel and cemented carbide substrates by medium frequency magnetron sputtering. The crystal structure and cross-sectional morphology of coatings were evaluated by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The adhesion of coatings to substrate was measured by Rockwell indention tests. These investigations show that the main diffraction peak of Zr/TiAlN and TiAlN coatings are corresponding to the TiN phase. The preferred orientation of out TiAlN coatings is obviously affected by Zr interlayer and substrate materials. The TiAlN coatings both on HSS and cemented carbide substrates exhibit a columnar structure. But, the columnar morphology of Zr/TiAlN on cemented carbide substrate becomes ambiguous and this structure of Zr/TiAlN coatings on HSS substrate even changes to isometric. The Rockwell indention results indicate that the adhesion of TiAlN coatings is significantly improved by adding Zr interlayer both on HSS substrate and cemented carbide substrate.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Hardening of Selective Laser Melted M2 Steel

2021 ◽  
Author(s):  
Mei Yang ◽  
Yishu Zhang ◽  
Haoxing You ◽  
Richard Smith ◽  
Richard D. Sisson
Keyword(s):  
Heat Treatment ◽  
High Speed ◽  
Cutting Tools ◽  
High Speed Steel ◽  
High Hardness ◽  
Steel Part ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heat Treated ◽  
Near Net Shape

Abstract Selective laser melting (SLM) is an additive manufacturing technique that can be used to make the near-net-shape metal parts. M2 is a high-speed steel widely used in cutting tools, which is due to its high hardness of this steel. Conventionally, the hardening heat treatment process, including quenching and tempering, is conducted to achieve the high hardness for M2 wrought parts. It was debated if the hardening is needed for additively manufactured M2 parts. In the present work, the M2 steel part is fabricated by SLM. It is found that the hardness of as-fabricated M2 SLM parts is much lower than the hardened M2 wrought parts. The characterization was conducted including X-ray diffraction (XRD), optical microscopy, Scanning Electron Microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS) to investigate the microstructure evolution of as-fabricated, quenched, and tempered M2 SLM part. The M2 wrought part was heat-treated simultaneously with the SLM part for comparison. It was found the hardness of M2 SLM part after heat treatment is increased and comparable to the wrought part. Both quenched and tempered M2 SLM and wrought parts have the same microstructure, while the size of the carbides in the wrought part is larger than that in the SLM part.

Residual Stress Analysis in Different Thickness TiN Coatings on High-Speed-Steel Substrates

2011 ◽  
Vol 239-242 ◽  
pp. 2331-2335 ◽  
Author(s):  
Fang Mei ◽  
Guang Zhou Sui ◽  
Man Feng Gong
Keyword(s):  
Residual Stresses ◽  
High Speed ◽  
Thermal Stresses ◽  
High Speed Steel ◽  
X Ray Diffraction ◽  
Tin Coatings ◽  
Compressive Stresses ◽  
M2 High Speed Steel ◽  
Steel Substrates ◽  
Different Thickness

TiN coatings were deposited on AISI M2 high-speed-steel (HSS) substrates by multi-arc ion plating technique. The thickness of substrate was 1.0 mm and five thicknesses of TiN coatings were 3.0, 5.0, 7.0, 9.0 and 11.0 μm, respectively. X-ray diffraction (XRD) has been used for measuring residual stresses. The stresses along five different directions (Ψ=0°, 20.7°, 30°, 37.8° and 45°) have been measured by recording the peak positions of TiN (220) reflection for each 2θ at different tilt angles Ψ. Residual compressive stresses present in the TiN coatings. Furthermore, the results revealed that the value of the residual stresses in TiN coatings was high. While the coatings thickness changed from 3 to 11 μm, the residual stresses varied from -3.22 to -2.04 GPa, the intrinsic stresses -1.32 to -0.14 GPa, the thermal stresses -1.86 to -1.75 GPa. The residual stresses in TiN coatings showed a nonlinear change. When the coatings thickness was about 8 μm, the residual stresses in TiN coatings reached to the maximum value.

Stress of Platinum Thin Films Deposited by Dc Magnetron Sputtering Using Argon/Oxygen Gas Mixture

1996 ◽  
Vol 441 ◽  
Author(s):  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Dong-Su Lee ◽  
Yong Eui Lee ◽  
Dong-Yeon Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Oxygen Incorporation ◽  
Oxygen Fraction ◽  
Oxygen Gas ◽  
Pt Films ◽  
Excessive Oxygen

AbstractPt thin films were deposited by a DC magnetron sputtering with Ar/O2 gas mixtures. Due to the oxygen incorporation into the Pt films, deposition rate and resistivity of as-deposited Pt thin films increased with oxygen fraction in the sputtering gas. No peaks from crystalline Pt oxides were observed by x-ray diffraction (XRD) and excessive oxygen incorporation into Pt lead to an amorphous Pt oxide formation. More oxygen could be incorporated in the Pt thin films deposited at lower temperatures and at higher total pressures. Incorporated oxygen was completely removed after an annealing at 800 °C for an hour in air ambient, as the resistivity of the Pt thin films recovered their bulk resistivity values. Tensile stress of the Pt films decreased with oxygen incorporation, and approached a saturation level at high resistivity of the films, presumably due to the formation of amorphous Pt oxides.

Microstresses in Molybdenum Nitride Thin Films Deposited by Reactive DC Magnetron Sputtering

2005 ◽  
Vol 490-491 ◽  
pp. 589-594 ◽  
Author(s):  
Yao Gen Shen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Growth ◽  
Nitrogen Addition ◽  
Molybdenum Nitride ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Complete Relaxation

Thin films of molybdenum nitride (MoNx with 0≤x≤0.35) were deposited on Si(100) at room temperature using reactive DC magnetron sputtering. The residual stress of films was measured as a function of sputtering pressure, nitrogen incorporation, and annealing temperature by wafer curvature-based technique. It was found that the stress of the films was strongly related to their microstructure, which depended mainly on the incorporation of nitrogen in the films. The film stresses without nitrogen addition strongly depended on the argon pressure and changed from highly compressive to highly tensile in a relatively narrow pressure range of 0.8-1.6 Pa. For pressures exceeding ~5.3 Pa, the stress in the film was nearly zero. Cross-sectional transmission electron microscopy indicated that the compressively stressed films contained a dense microstructure without any columns, while the films having tensile stress had a very columnar microstructure. High sputtering-gas pressure conditions yielded dendritic-like film growth, resulting in complete relaxation of the residual tensile stresses. It was also found that the asdeposited film was poorly ordered in structure. When the film was heated at ~775 K, crystallization occurred and the stress of the film drastically changed from –0.75 to 1.65 GPa. The stress development mechanism may be due to volumetric shrinkage of the film during crystallization.

scholarly journals The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 253 ◽  
Author(s):  
Wei-Chun Chen ◽  
Chao-Te Lee ◽  
James Su ◽  
Hung-Pin Chen
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Film Structure ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
X Ray

Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.

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