Experimental Analysis on Surface Profile of Sapphire Wafer after Polishing by Chemical Mechanical Polishing

2017 ◽  
Vol 749 ◽  
pp. 229-233
Author(s):  
Zone Ching Lin ◽  
Wei Shuen Huang ◽  
Hao Yang Ding
Keyword(s):  
Chemical Mechanical Polishing ◽  
Rotational Velocity ◽  
Abrasive Particle ◽  
Central Area ◽  
Surface Profile ◽  
Specific Area ◽  
Mechanical Polishing ◽  
Sapphire Wafer ◽  
Atomic Force ◽  
Surface Profiles

The study mainly explores the surface profile of sapphire wafer after polishing by the method of chemical mechanical polishing (CMP). Pattern-free polishing slurry with SiO2 abrasive particle is used to polish the sapphire wafer. This paper observes the phenomena of surface profile and surface scratches of sapphire wafer under different pressures and different rotational velocities during CMP. The study uses atomic force microscope (AFM) to scan the surface of sapphire wafer focusing on three axial lines of 0∘, 45∘and 90∘from the position of near edge passing the center of sapphire wafer. The study also selects five positions on a specific area to draw the surface profiles on the axial lines of 0∘, 45∘and 90∘. It can be observed that the central area of sapphire wafer has lower depression than other areas because the central area is polished more polishing times. Besides, the depression on the central area of sapphire wafer has a greater depression value and it has more and larger surface scratches when it is polished under a greater down force and at a faster rotational velocity.

Effect of pH on ceria–silica interactions during chemical mechanical polishing

2005 ◽  
Vol 20 (5) ◽  
pp. 1139-1145 ◽  
Author(s):  
Jeremiah T. Abiade ◽  
Wonseop Choi ◽  
Rajiv K. Singh
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Force Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Substrate Interaction ◽  
Atomic Force ◽  
Silica Removal

To understand the ceria–silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle–substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.

Chemical Mechanical Polishing of Transparent Nd:YAG Ceramics

2008 ◽  
Vol 375-376 ◽  
pp. 278-282 ◽  
Author(s):  
Jun Li ◽  
Yong Zhu ◽  
Chuang Tian Chen
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscope ◽  
Chemical Mechanical Polishing ◽  
Brittle Materials ◽  
Mechanical Polishing ◽  
High Quality ◽  
Atomic Force ◽  
Hard And Brittle Materials ◽  
Quality Surface ◽  
High Quality Surface

Transparent Nd:YAG ceramics which are very hard and brittle materials, are very difficult to be polished. There are many micro scratches or damages on the surface after mechanical polishing with Al2O3. In order to remove micro scratches or damages, chemical mechanical polishing (CMP) was adopted to manufacture Nd:YAG ceramics. In the polishing experiment, Pellon and Chemcloth pads were utilized for chemical mechanical polishing of Nd:YAG ceramics. Colloidal SiO2 was selected as the polishing slurry in two different polishing environments, acidity and alkalinity. The surface roughness was determined by using atomic force microscope. In this study, four polishing experimental combinations that each combination contains one of the two pads and one of the two polishing environments were carried out in the optimum polishing condition. Then the high quality surface of transparent Nd:YAG ceramics with the best surface roughness of < 0.2 nm RMS and few micro scratches or damages is obtained by adopting CMP process with Chemcloth pad and colloidal SiO2 in acidic condition.

scholarly journals Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

2021 ◽  
Vol 8 ◽  
Author(s):  
Bing Yan ◽  
Hongyu Liang ◽  
Yongfeng Liu ◽  
Weihua Liu ◽  
Wenhui Yuan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Surface Quality ◽  
Chemical Mechanical Polishing ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
Mechanical Polishing ◽  
High Quality ◽  
X Ray ◽  
Atomic Force

Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate surface quality. In this study, the chemical mechanical polishing of GaSb wafers is investigated by considering the effects of the polishing pad, polishing solution, polishing time and pH buffer on their surface morphology and roughness. The surface morphology and root mean square (RMS) roughness of the free-standing wafers are characterized using a white light interferometer, a laser interferometer and an atomic force microscope. X-ray tomography is employed to measure the surface crystalline quality and strain defects of the samples subjected to the polishing treatments. The results show that with the optimum polishing condition, the polished GaSb wafers demonstrate high-quality surfaces without haze, scratches or strain defect regions. The peak to valley value is 5.0 μm and the RMS roughness can be controlled at less than 0.13 nm. A buffer layer grown on the GaSb surface with molecular beam epitaxy is examined via atomic force microscopy and high-resolution X-ray diffraction, which show a low RMS roughness of 0.159 nm, a well-controlled two-dimensional growth mode and a full width half maximum of the Bragg diffraction peak of 14.2”, indicating high-quality GaSb wafers. Thus, this work provides useful guidelines for achieving GaSb wafers with high-quality surfaces that show significant promise for substrate applications.

Research on Chemical Mechanical Polishing for Silicon Nitride Ceramics

2008 ◽  
Vol 375-376 ◽  
pp. 283-287
Author(s):  
Cong Rong Zhu ◽  
Ju Long Yuan ◽  
Qin Xu ◽  
Bing Hai Lv
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Research Result ◽  
Surface Profile ◽  
Mechanical Polishing ◽  
Machining Process ◽  
Good Thermal Stability ◽  
Nitride Ceramics ◽  
Ultra Precision ◽  
Small Density

Silicon nitride ceramics materials have excellent properties such as small density, high rigidity, high Young's modulus, high wearability, good thermal stability and chemical stability, which make it become one of the most appropriate materials for rollers of high precision bearing. Chemical Mechanical Polishing (CMP) technology is employed to have an ultra-precision machining process for silicon nitride ceramics materials workpiece and the effects of workpiece surface roughness in different abrasive are discussed in this research. The XRD and SEM technology are used to take phase analysis and surface profile detection for the finishing workpiece polished with CeO2 abrasive. The chemical reaction mechanism and the material remove mechanism of silicon nitride ceramics materials in CMP process with CeO2 abrasive are both analysed and discussed in this paper. The research result shows that an extremely smooth surface of silicon nitride ceramics materials workpiece with roughness 5nm Ra is obtained after CMP process with polyurethane polishing pad and CeO2 abrasive.

scholarly journals Simulation on Chemical Mechanical Polishing using Atomic Force Microscope

2005 ◽  
Vol 71 (701) ◽  
pp. 280-285 ◽  
Author(s):  
Atsushi MIYOSHI ◽  
Koei MATSUKAWA ◽  
Hiroshi MATSUO ◽  
Tadayuki SAKAI ◽  
Masaru NOZUE
Keyword(s):  
Atomic Force Microscope ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Atomic Force
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