Structural and Optical Investigation of Mn-Doped ZnS Nanocrystals

2005 ◽  
Vol 475-479 ◽  
pp. 1795-1798 ◽  
Author(s):  
W.Q. Peng ◽  
S.C. Qu ◽  
G.W. Cong ◽  
Z.G. Wang
Keyword(s):  
Visible Spectrum ◽  
Optical Investigation ◽  
X Ray Diffraction ◽  
High Concentration ◽  
Zinc Blende ◽  
Order Of Magnitude ◽  
Zns Nanocrystals ◽  
Average Size ◽  
Mn Doped ◽  
Zinc Blende Structure

Using a solution-based chemical method, we have prepared ZnS nanocrystals doped with high concentration of Mn2+. The X-ray diffraction analysis confirmed a zinc blende structure. The average size was about 3 nm. Photoluminescence spectrum showed room temperature emission in the visible spectrum, which consisted of the defect-related emission and the 4 T1-6 A1 emission of Mn2+ ions. Compared with the undoped sample, the luminescence of the ZnS:Mn sample is enhanced by more than an order of magnitude, which indicated that the Mn2+ ions can efficiently boost the luminescence of ZnS nanocrystals.

Synthesis and Characterization of ZnS: Fe/ZnS Core-Shell Nanocrystals

2011 ◽  
Vol 148-149 ◽  
pp. 900-903
Author(s):  
Li Hua Li ◽  
Yong Jun Gu ◽  
Rui Shi Xie ◽  
Jian Guo Zhu
Keyword(s):  
Chemical Precipitation ◽  
Precipitation Method ◽  
Core Shell ◽  
X Ray Diffraction ◽  
Pl Spectra ◽  
Zinc Blende ◽  
Diffraction Peaks ◽  
Zns Nanocrystals ◽  
Zinc Blende Structure

ZnS:Fe and ZnS:Fe/ZnS core-shell nanocrystals were synthesized by chemical precipitation method. It was found that the ZnS: Fe based nanocrystals possess zinc blende structure. Compared to ZnS: Fe nanocrystals, the intensity of the X-ray diffraction peaks of ZnS: Fe/ZnS nanocrystals reduced and these peaks moved to lower angles. TEM images show that ZnS: Fe based nanocrystals are spheroidal and the average particles size is about 3~4 nm. PL spectra of ZnS: Fe nanocrystals revealed several mission bands, ~406nm, ~444nm, ~416nm, However, PL spectra of ZnS: Fe/ZnS nanocrystals showed several mission bands, ~420nm, ~432nm, ~449nm.

Characterization of ZnSe Nanoparticles Prepared Using Ultrasonic Radiation Method

1998 ◽  
Vol 536 ◽  
Author(s):  
Jianfeng Xu ◽  
Wei Ji ◽  
Sing-Hai Tang ◽  
Wei Huang
Keyword(s):  
Xps Analysis ◽  
Phonon Modes ◽  
Znse Nanoparticles ◽  
Raman Scattering Spectroscopy ◽  
Ultrasonic Radiation ◽  
Radiation Method ◽  
Zinc Blende ◽  
Average Size ◽  
Zinc Blende Structure

AbstractZnSe nanoparticles with an average size of 15 nm were prepared using the ultrasonic radiation method. The characterization was carried out by means of XRD, TEM, XPS and Raman scattering spectroscopy. The experimental results indicate that the as-prepared powders are composed of ZnSe with zinc-blende structure. The high purity of ZnSe particles was confirmed by XPS analysis. In the Raman spectra, TO and LO phonon modes were observed at 205 and 257 cm−1 in the ZnSe nanoparticles.

Structural and photocatalytic properties of Cd1-xZnxS nanocrystals via organic solution method

2016 ◽  
Vol 09 (06) ◽  
pp. 1750009 ◽  
Author(s):  
Xiang Liu ◽  
Hanbin Wang ◽  
Dan Shu ◽  
Yang Li ◽  
Xu Chen ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Solution Method ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Structural Morphology ◽  
Zinc Blende ◽  
Evolution Experiment ◽  
Xrd Patterns ◽  
Zn Ions ◽  
Zinc Blende Structure

Uniform CdxZn[Formula: see text]S nanocrystals with size between 4[Formula: see text]nm and 9[Formula: see text]nm were fabricated by an organic chemical method. The structural, morphology as well as optical properties of the samples were investigated by X-ray diffraction (XRD), TEM, and UV–Vis absorbance techniques. The XRD patterns of CdxZn[Formula: see text]S nanocrystals indicated that the solid solution possesses cubic zinc-blende structure. By tuning the composition of Zn ions in the alloy, the band gap of CdxZn[Formula: see text]S can be modulated from 2.10[Formula: see text]eV to 3.17[Formula: see text]eV. Photocatalytic hydrogen evolution was investigated under visible-light ([Formula: see text][Formula: see text]nm) irradiation with Na2S/Na2SO3 as the electron donor. It is found that Cd[Formula: see text]Zn[Formula: see text]S nanocrystals have the highest photoactivity with a H2 evolution rate of 1.52[Formula: see text]mmol/h[Formula: see text][Formula: see text][Formula: see text]g. The CdxZn[Formula: see text]S nanoparticles exhibit stable activity in a cycled hydrogen evolution experiment.

scholarly journals Synthesis and Fluorescence Property of Mn-Doped ZnSe Nanowires

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Dongmei Han ◽  
Chunfeng Song ◽  
Xiaoyu Li
Keyword(s):  
Heavy Metal Ions ◽  
Average Length ◽  
Water Soluble ◽  
Absorbance Spectrum ◽  
Zinc Blende ◽  
Single Well ◽  
Znse Nanowires ◽  
Absorbance Peak ◽  
Mn Doped ◽  
Zinc Blende Structure

Water-soluble Mn-doped ZnSe luminescent nanowires were successfully prepared by hydrothermal method without any heavy metal ions and toxic reagents. The morphology, composition, and property of the products were investigated. The experimental results showed that the Mn-doped ZnSe nanowires were single well crystallized and had a zinc blende structure. The average length of the nanowires was about 2-3 μm, and the diameter was 80 nm. With the increase ofMn2+-doped concentration, the absorbance peak showed large difference. The UV-vis absorbance spectrum showed that the Mn-doped ZnSe nanowires had a sharp absorption band appearing at 360 nm. The PL spectrum revealed that the nanowires had two distinct emission bands centered at 432 and 580 nm.

Fluorescence Enhancement of ZnS Nanocrystals via Ultraviolet Irradiation

2014 ◽  
Vol 556-562 ◽  
pp. 27-31
Author(s):  
Ling Ling Peng ◽  
Bi Tao Liu ◽  
Tao Han
Keyword(s):  
Ultraviolet Irradiation ◽  
Surface Defects ◽  
Irradiation Time ◽  
Chemical Precipitation ◽  
Precipitation Method ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Zns Nanocrystals

ZnS nanocrystals were prepared via chemical precipitation method and characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) and photoluminescence (PL) spectra. The results indicated that the ZnS nanocrystals have cubic zinc blende structure and diameter is 3.68 nm as demonstrated by XRD. The morphology of nanocrystals is spherical measured by TEM which shows the similar particle size. The photoluminescence spectrum peaking at about 424 nm was due mostly to the trap-state emission, and a satellite peak at 480nm ascribed to the dangling bond of S in the surface of ZnS nanocrystals. The emission intensity of ZnS was enhanced after ultraviolet irradiation, the enhancement of the Photoluminescence intensity was due to the elimination of the surface defects after ultraviolet irradiation, for the growth of the coated shell on ZnS nonacrystals, the Photoluminescence intensity was increased as ultraviolet irradiation time growth, finally tends to be stable for the surface state of nanocrystals steady.

Structural and Optical Investigation of Mn-Doped ZnS Nanocrystals

2005 ◽  
pp. 1795-1798
Author(s):  
W.Q. Peng ◽  
S.C. Qu ◽  
G.W. Cong ◽  
Z.G. Wang
Keyword(s):  
Optical Investigation ◽  
Zns Nanocrystals ◽  
Mn Doped

Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2467-2470 ◽  
Author(s):  
J. C. Caylor ◽  
M. S. Sander ◽  
A. M. Stacy ◽  
J. S. Harper ◽  
R. Gronsky ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Zinc Blende Structure

Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C and a bulk CoSb3 target with 0.75 at.% excess Sb. An InSb (a0 = 4 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb3 with a = 0 4 0.9034 nm) on the basis of a presumed 45° rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001)CoSb3 ∥ (001)InSb; [100]CoSb3 ∥ [110]InSb.

A Facile Method to Preparation of Amphiphilic Perylene Tetracarboxylic Diimide/ZnS Hybrid Nanocomposites and Improved Semiconducting Property

2014 ◽  
Vol 936 ◽  
pp. 295-299 ◽  
Author(s):  
Jin Gang Song ◽  
Hong Yan Wang ◽  
Nian Shuai An ◽  
Yan Li Chen
Keyword(s):  
Organic Semiconductors ◽  
Hybrid Nanocomposites ◽  
Organic Template ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Order Of Magnitude ◽  
Zns Nanocrystals ◽  
Semiconducting Property ◽  
Scanning Electron

A self-assembled film of an amphiphilic perylene tetracarboxylic diimide derivative (N-hexane-N'-(1-phenyl-4-aminoethanol)-1,7-di (4-tert-butylphenoxy) perylene-3,4;9,10-tetracarboxylate diimide, HH-PDI) has been used as the organic template to produce the first example of monodispersed nanoparticles of HH-PDI/ZnS composites. The HH-PDI pure film and HH-PDI/ZnS nanocomposites were characterized by UV-vis absorption, X-ray diffraction (XRD), scanning electron microscopy (SEM) and current-voltage (I-V) measurements. Experimental results revealed the film crystallinity and general molecular order for HH-PDI molecules in the nanocomposites are improved effectively in comparison with those in the pure film due to the introduction of ZnS nanocrystals. The electrical conductivity of the HH-PDI/ZnS nanocomposites (6.6×10-5 S cm-1) is more than ca. 2 order of magnitude higher than that of (3.6×10-7 S cm-1). The present result provides an efficient way to improve the performance of organic semiconductors through introducing inorganic semiconducting nanocrystals.

A Study of the Photoluminescence and Reflectivity Spectra of MOCVD Grown MnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
M. Di Blasio ◽  
L. Aigouy ◽  
M. Averous ◽  
J. Calas ◽  
P. Tomasini ◽  
...  
Keyword(s):  
Energy Gap ◽  
Stokes Shift ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende ◽  
Reflectivity Spectra ◽  
Different Temperatures ◽  
First Time ◽  
Zinc Blende Structure

Photoluminescence (PL) experiments at 2K are performed on MOCVD grown MnSe. The precursors used in the growth stage are methylpentacarbonylmanganese and diethylselenide. Pyrolysis of the percursors is realized inside a gradient reactor under a constant H2 flux, between 280-55°TC. The compound is epitaxially grown on various substrates (Si, InP, GaSb, GaAs, ZnTe/GaAs, etc.). On some of these samples the compound presents a zinc blende structure, while in the other samples rock salt formation has been identified. The first substrate is used because of its interest in Si technology, while the others are used because MnSe can be grown in the zinc blende phase for very thin layers. For the first time x-ray diffraction data has allowed us to determine the lattice constant of zincblende MnSe (aMnse (oct)=5.818Å), confirming the close approximation (a ∼ 5.9Å) used from the Zn1-xMnxSe alloy. These compounds have visible Mn++ transitions at 2.12-5eV; other features are also visible at 2.3-4, 2.7, and 3.0eV. The energy gap transition of tetrahedral thin film layers of MnSe is seen for the first time in PL spectra. A temperature dependant PL study is performed on MnSe in the 2-200K range. Reflectivity experiments are used to attempt to identify the internal manganese transitions. A qualitative PL analysis of the samples grown at different temperatures and on different substrates is provided. A Stokes shift is encountered when the results are compared.

Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction

2015 ◽  
Vol 22 (1) ◽  
pp. 67-75 ◽  
Author(s):  
Martin Köhl ◽  
Philipp Schroth ◽  
Andrey A. Minkevich ◽  
Jean-Wolfgang Hornung ◽  
Emmanouil Dimakis ◽  
...  
Keyword(s):  
Interplanar Spacing ◽  
Stacking Sequence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Mean Diameter ◽  
Order Of Magnitude ◽  
Focused Beam

In GaAs nanowires grown along the cubic [111]cdirection, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111)cGa (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X-ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18–25 nm. The measurements are performed with a nano-focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111)cGa (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.

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