Effects of Heat Treatment on Microstructure of Sputter Deposited TiNiPd Film on Si Wafer

2005 ◽  
Vol 475-479 ◽  
pp. 3819-3822 ◽  
Author(s):  
Shi Qiang Qian ◽  
Jian Sheng Wu
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Amorphous State ◽  
Diffraction Experiment ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Amorphous Thin Films ◽  
Sputter Deposited ◽  
Si Wafer

Amorphous thin Films of Ti51.78 Ni22.24Pd25.98 alloys were deposited onto 2 inch diameter n-type (100)Si wafer by r.f. magnetron sputtering. The crystallization temperature from an amorphous state to crystallization of free-standing thin film was found to be 553.1oC, but that of non-free-standing thin film on Si wafer was found to be higher from X-ray diffraction experiment. The film heated 1 h at 550 oC was partly crystallized but at 650 oC was almost whole crystallized. The film heated 1 h at 750 oC quite crystallized and some precipitation appear. Heated 50 h at 450 oC before crystallization the films would be accelerate B19' but restrain B19 formation in succeeding heat-treatment.

Thermal Stability of Amorphous Ni-Nb Thin Films for Use as Diffusion Barriers

1987 ◽  
Vol 108 ◽  
Author(s):  
S. N. Farrens ◽  
J. H. Perepezko ◽  
B. L. Doyle ◽  
S. R. Lee
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Amorphous Thin Films ◽  
Si Substrates ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Thermal Stability Of

ABSTRACTThe interdiffusion and crystallization reactions between amorphous Ni-Nb alloy films and Si substrates and several overlayer metals have been monitored by x-ray diffraction and high resolution Rutherford backscattering spectroscopy. Free standing amorphous thin films of Ni-Nb alloys crystallize in one hour at temperatures between 600–625 °C and show little dependence of the crystallization temperature, Tx, on composition over the range from 30–80 at.% Ni. However, in films that are sputter deposited onto Si substrates Tx tends to increase with increasing Nb composition. Ni60Nb40 samples without overlayers crystallize at 650–700 °C. Enhancement of the thermal stability to 700–750 °C is achieved with a Nb overlayer. In contrast, a Ni overlayer can reduce Tx to 450 °C. At the film/substrate interface silicide formation reactions with Ni from the film contribute to a destabilization of the amorphous alloy. The modification of Tx with Ni, Nb, and other overlayers appears to be related to changes in the reaction kinetics associated with penetration of the overlayer into the film.

scholarly journals Влияние режима получения образцов и термообработки на локальную структуру халькогенидного полупроводника Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=-

2022 ◽  
Vol 56 (3) ◽  
pp. 291
Author(s):  
С.Н. Гарибова ◽  
А.И. Исаев ◽  
С.И. Мехтиева ◽  
С.У. Атаева ◽  
Р.И. Алекперов
Keyword(s):  
Heat Treatment ◽  
Thermal Processing ◽  
Thermal Evaporation ◽  
Amorphous State ◽  
Hexagonal Structure ◽  
Structural Elements ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Matrix ◽  
Close Range

Specifics of "amorphous state - crystal" phase transitions in dependence on the samples obtaining method and thermal processing, as well as changes in the structure and close range order in the arrangement of the atoms of Ge20Sb20.5Te51 chalcogenide semiconductors have been studied by the x-ray diffraction and Raman spectroscopy. It has been shown that Ge20Sb20.5Te51 films obtained by thermal evaporation on an unheated substrate are amorphous; after heat treatment at 220 and 400 °C, transform into a crystalline phase with a cubic and hexagonal structure. The chemical bonds and the main structural elements that form the matrix of the investigated objects, as well as the changes that occur in them during heat treatment, have been determined.

Nanostructured YSZ Thin Film for Application as Electrolyte in an Electrode Supported SOFC

2012 ◽  
Vol 727-728 ◽  
pp. 873-878
Author(s):  
Cibele Melo Halmenschlager ◽  
Matias de Angelis Korb ◽  
Roberto Neagu ◽  
Carlos Pérez Bergmann ◽  
Célia de Fraga Malfatti
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Treatment Process ◽  
Precursor Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Solvent Influence ◽  
Different Temperatures ◽  
Spray Pyrolysis Process ◽  
Fast Increase

The development of solid oxide fuel cell with thin film concepts for an electrode supported design based on the yttria-stabilized zirconia has demonstrated favourable results due to its high chemistry stability in oxidization and environment reduction. The spray pyrolysis process was investigated in order to obtain dense thin films of YSZ on different substrates. The precursor solution was obtained by zirconium and yttrium salt dissolutions in a mixture of water and glycerine in several ratios to study the solvent influence. The substrate was initially heated at 600 °C and during the deposition it ranged from 260-350°C, finishing at a fast increase in temperature of 600°C. The heat treatment was carried out in four different temperatures: 700 °C, 750 °C, 800 °C, and 900 °. The precursors were characterized by thermal analysis. The microstructures of the films were studied using scanning electron microscopy and X-ray diffraction. The results obtained showed that the films obtained were crystalline before the heat treatment process and have shown ionic conductivity above 800°C.

The Effect of Cold-Working on the Crystallization Temperature of Thin-Film Shape Memory Effect TiNi.

1993 ◽  
Vol 308 ◽  
Author(s):  
John S. Madsen ◽  
A. Peter Jardine
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystallization Temperature ◽  
Minimum Temperature ◽  
Cold Working ◽  
Vacuum Furnace ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Cold Worked

ABSTRACTThe minimum temperature for the crystallization of amorphous TiNi on substrates is of interest in developing thin-film SME material while minimizing chemical interactions with the substrate. Using 20 micron thick free standing TiNi material annealed in a vacuum furnace, X-Ray diffraction of the thin-films indicated that the crystallization occured within 20 minutes at 510°C, 490°C and 480°C. At 450°C, crystallization kinetics were significantly slower, and the foils were fulling crystallized after annealing for 7.5 hrs. To further lower the crystallization temperature, cold working of the foil by rolling was introduced and full crystallization was observed after 7.5 hours annealing at 400°C in a cold-worked foil. Cold working and annealing at 400°C and 350°C for 7.5 hrs did not observably promote lower crystallization temperatures.

Preparation of Bioactive Nanophase Titania Ceramics by Alkali-Heat Treatment

2005 ◽  
Vol 288-289 ◽  
pp. 215-218 ◽  
Author(s):  
Qi Feng Yu ◽  
Bang Cheng Yang ◽  
Yao Wu ◽  
Xing Dong Zhang
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Sodium Titanate ◽  
Apatite Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heat Treated ◽  
Naoh Solution ◽  
Bonelike Apatite ◽  
Scanning Electron

In this study, alkali-heat treatment in NaOH solution and heat treatment, which could form amorphous sodium titanate on nanophase titania ceramics surface by conditioning the process, was employed to modify the structure and bioactivity of biomedical titania ceramics. After the nanophase titania ceramics was subjected to alkali-heat treatment, thin film X-ray diffraction and scanning electron microscopy results showed the titania ceramics surfaces were covered by porous sodium titanate. In fast calacification solution (FCS), the alkali-heat treated titania ceramics could induce bonelike apatite formation on its surface. Our results showed that induction of apatite-forming ability on titania ceramics could be attained by alkali-heat treatment. So it was an effective way to prepare bioactive titania ceramics by combining sintering and alkali-heat treatment.

Characterization of Silicide Formation of LPCVD-W By Means of Rutherford Backscatrering Spectrometry and X-Ray Diffractometry

1989 ◽  
Vol 168 ◽  
Author(s):  
S.-L. Zhang ◽  
R. Buchta ◽  
M. Östling
Keyword(s):  
Heat Treatment ◽  
Film Thickness ◽  
Reference Sample ◽  
X Ray Diffraction ◽  
Simple Method ◽  
X Ray ◽  
Si Substrates ◽  
History Of ◽  
Compensation Technique ◽  
Sputter Deposited

AbstractTungsten disilicide (WSi2 ) was formed by annealing 185 nm and 750 nm thick LPCVD-W films deposited on <100>-Si substrates. The thickness of the formed WSi2 was observed by Rutherford backscattering measurements (RBS) to increase parabolically with the annealing time. This agrees with the behavior reported in the literature for sputter deposited or evaporated W films. However, a higher stlicide growth rate was found in this work. An activation energy of 2.6 eV/atom was measured, which is smaller than those for sputter deposited or evaporated W films. The crystal structures of the formed WSi2 and the unreacted W films were analyzed using X-ray diffraction (XRD) technique. The thermal history of the samples was found to play an important role for the crystal structure of the unreacted W and formed WSi2. The as-deposited W films became more oriented to the <100> direction with increasing film thickness, while the unreacted W films on top of the formed WSi2, from the samples annealed at temperatures from 700 to 800°C, became more <100> direction dominated with decreasing W film thickness. The preferred orientation of the grown WSi2 films also varied with the silicidation conditions. These observations indicate that the simple method of determining W film thickness by comparing the W diffraction peak heights of the remaining W films after heat treatment to a reference sample will unavoidably introduce large errors. A compensation technique was suggested where both the W and WSi2 diffraction signals were used. A parameter x, a function of reacted W thickness, was introduced to fit the compensation procedure. The conclusion of this study is that attention should be paid to the orientation change of W and WSi2 films during heat treatment if XRD is employed to study the kinetics of WSi2 formation.

Improvement of beamline 4B9A and results of an X-ray diffraction experiment

1998 ◽  
Vol 5 (3) ◽  
pp. 503-505
Author(s):  
D. W. Wang ◽  
H. Y. Jiang ◽  
Z. H. Wu ◽  
X. S. Wu ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Photon Energy ◽  
Tetragonal Symmetry ◽  
Second Phase ◽  
Diffraction Experiment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cylindrical Mirror ◽  
Diffraction Patterns ◽  
Maximum Photon

4B9A is a focusing and monochromatic photon beam at the BSRF, which was constructed in 1990. During the second phase of the BSRF program, the surface of the cylindrical mirror has been coated with Pt, covering the original Ni, and the monochromator has been upgraded. The maximum photon energy extends to 11 keV and the intensity has increased about tenfold with respect to the previous intensity at 6 keV. Synchrotron X-ray diffraction patterns for the Hg-1223 (HgBa2Ca2Cu3O8+δ) superconducting bulk and thin film have been measured at 1.54014 Å. Results indicate that the bulk and film can be indexed as possessing tetragonal symmetry; lattice parameters a = 3.856 Å and c = 15.851 Å for the bulk Hg-1223 compound, and a = 3.8517 Å and c = 15.8511 Å for the film. Their structures are similar.

Microstructure and Mechanical Properties of Combinatorially Prepared Thin Film Aluminum-Silicon Nanocomposites

2006 ◽  
Vol 977 ◽  
Author(s):  
Charles H. Olk ◽  
Michael Lukitsch ◽  
Daad B Haddad
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Structural Phase ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystallite Sizes ◽  
Amorphous Si ◽  
Sputter Deposited ◽  
Combinatorial Methods

Abstracte have undertaken the exploration of the AlxSi1-x systems to discover new alloys with enhanced properties. We describe the mechanical properties of thin film AlxSi1-x alloys determined through indentation experiments. Combinatorial methods were used to systematically control thin film microstructure through variations in composition and growth temperature. Discrete libraries of compositionally graded films have been sputter deposited onto silicon substrates to produce two structural phase regions: amorphous Al-Si and amorphous Si plus crystalline Al. The mechanical properties of the thin films were determined by analyzing the load-displacement traces based on the Oliver-Pharr method. X-ray diffraction was used to investigate the microstructures and determine the crystallite sizes.

Mounting of crystals for macromolecular crystallography in a free-standing thin film

1990 ◽  
Vol 23 (5) ◽  
pp. 387-391 ◽  
Author(s):  
T.-Y. Teng
Keyword(s):  
Thin Film ◽  
Optical Monitoring ◽  
Thin Wire ◽  
Macromolecular Crystallography ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Viscous Material ◽  
X Ray ◽  
Uniform Background ◽  
Diffraction Patterns

A method for mounting single crystals in macromolecular crystallographic studies is described in which the crystal is suspended in a thin film. The film is formed from a mixture of the crystallization buffer and a hydrophilic viscous material, confined within a thin-wire loop by surface tension. Compared with conventional crystal mounting methods, this method greatly simplifies and speeds the mounting procedure, is well suited to shock freezing and to optical monitoring of the crystals, deforms fragile crystals less and gives a lower and more uniform background in the X-ray diffraction patterns.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

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