Analysis of SiC Islands Formation during First Steps of Si Carbonization Process

2005 ◽  
Vol 483-485 ◽  
pp. 555-558 ◽  
Author(s):  
David Méndez ◽  
A. Aouni ◽  
Daniel Araújo ◽  
Etienne Bustarret ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Carbon Source ◽  
Electron Diffraction Pattern ◽  
Attenuated Total Reflectance ◽  
Total Reflectance ◽  
Carbonization Process ◽  
Transmission Electron ◽  
Three Samples

The effect of the temperature at which the carbon source is introduced in the reactor on the early stages of the carbonization process is analyzed here. Three samples heated up to 1150°C with propane introduction temperatures (Tintro) of 725, 1030 and 1100°C are analyzed by transmission electron microscopy and attenuated total reflectance. The size of the SiC nuclei increases with Tintro. There is also an effect on the strain of the resulting carbonization layer. The electron diffraction pattern of the sample with the highest Tintro shows a fully relaxed 3C-SiC layer, while no evidence of SiC relaxation is present in low Tintro samples where the SiC islands seems to be pseudomorphic.

Microstructure of Bonding Interface in Explosively Welded Metal/Ceramic Clad

2010 ◽  
Vol 638-642 ◽  
pp. 3775-3780 ◽  
Author(s):  
Seiichiro Ii ◽  
Chihiro Iwamoto ◽  
Shinobu Satonaka ◽  
Kazuyuki Hokamoto ◽  
Masahiro Fujita
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Nitride ◽  
Electron Diffraction ◽  
Electron Diffraction Pattern ◽  
Explosive Welding ◽  
Bonding Interface ◽  
X Ray ◽  
Transmission Electron ◽  
Metal Ceramic

Bonding interface in aluminum (Al) and silicon nitride (Si3N4) clad fabricated by explosive welding has been investigated by transmission electron microscopy (TEM). The nanocrystalline region was clearly observed at the interface between Al and Si3N4. Electron diffraction pattern and energy dispersive X-ray spectroscopy (EDS) measurements across the interface revealed that this nanocrystalline region consist of the only aluminum.

Polytypoids in high Tc thallium based superconducting materials

1990 ◽  
Vol 5 (8) ◽  
pp. 1620-1624
Author(s):  
A. K. Singh ◽  
M. A. Imam ◽  
K. Sadananda ◽  
S. B. Qadri ◽  
E. F. Skelton ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Electron Diffraction Pattern ◽  
Stacking Faults ◽  
Superconducting Materials ◽  
Superconducting Properties ◽  
High Tc ◽  
Transmission Electron

Several high Tc compounds containing Tl (thallium) were prepared starting from different initial compositions. Superconducting properties and the structure were determined for each sample. Electron diffraction and transmission electron microscopy showed the existence of polytypic high Tc compounds with the same a- and b-axes but different c-axis values. The c-axis appears to increase approximately in integral multiples of 0.15 nm with varying composition and is associated with the insertion of Cu–Ca or Cu–Tl layers in each unit cell. Several random stacking faults were also noted, which give rise to diffuse streaking in the electron diffraction pattern.

Epitaxial Growth of SrTiO3 Thin Films on TiN/Si Substrates Using RF Sputtering

2006 ◽  
Vol 966 ◽  
Author(s):  
Chun Wang ◽  
Mark H Kryder
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Electron Diffraction Pattern ◽  
Rf Sputtering ◽  
Epitaxial Relationship ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTEpitaxial SrTiO3 (001) thin films with a TiN template layer have been deposited on Si(001) single crystal substrates by RF sputtering. The deposited SrTiO3 films show a surface with roughness of 0.66nm. The orientation relationship was determined to be SrTiO3(001)[110]∥TiN(001)[110]∥Si(001)[110]. The microstructure and interface of the multilayer was studied using high resolution transmission electron microscopy (TEM). The electron diffraction pattern confirmed the epitaxial relationship between each layer.

PH Dependence of the Size and Shape of the Gold Nanoparticles Prepared by Macromolecules

2013 ◽  
Vol 634-638 ◽  
pp. 2228-2231
Author(s):  
Chun Rong Wang ◽  
Xian Zai Yan ◽  
Li Li Yu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gold Nanoparticles ◽  
Electron Diffraction ◽  
Electron Diffraction Pattern ◽  
Ph Dependence ◽  
Gold Nanostructures ◽  
Size And Shape ◽  
Transmission Electron ◽  
Shape Changes

The effect of the pH of the preparing solution on the size and shape of gold nanoparticles was studied in the solution containing soybean peptides or β-cyclodextrin (β-CD) as reducing agent. The resulting gold nanostructures were characterized by transmission electron microscopy (TEM), XRD and UV-vis spectra. Different shape of gold nanoparticles such as nanoplates, networked nanowires and spheres were prepared by changing the pH of solution. Electron diffraction pattern showed that the shape changes from plate or network to sphere as the pH of solution is increasing.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Laser-Induced Oxidation and Crystallization of Thin Amorphous Sputtered Cr Films

1983 ◽  
Vol 29 ◽  
Author(s):  
M. I. Birjega ◽  
C. A. Constantin ◽  
M. Dinescu ◽  
I. Th. Florescu ◽  
I. N. Mihailescu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Laser Irradiation ◽  
Dwell Time ◽  
Free Standing ◽  
Transmission Electron Diffraction ◽  
Oxidation Processes ◽  
Transmission Electron ◽  
Power Densities

ABSTRACTThe crystallization and oxidation processes of thin, free-standing (FS), sputtered Cr films under the action of cw CO2 laser irradiation were studied by transmission electron microscopy (TEM) and transmission electron diffraction (TED). The crystallization is induced at power densities above 28.65 W cm−2, dwell time of 1 s, and the oxidation at power densities of 48.1 W cm−2 and longer dwell times.

Structural transformation of a kaolinite and calcite mixture to gehlenite and anorthite

2003 ◽  
Vol 18 (2) ◽  
pp. 475-481 ◽  
Author(s):  
Karfa Traoré ◽  
Philippe Blanchart
Keyword(s):  
Electron Microscopy ◽  
Phase Diagram ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Low Temperature ◽  
Orientation Relationship ◽  
Interlayer Spacing ◽  
Direct Transition ◽  
Transmission Electron ◽  
Successive Phase

Kaolinite mixed with calcite was sintered at low temperature (1100 °C; 5 °C/min). The successive phase transformations are metakaolinite to gehlenite and then anorthite, although the available phase diagram indicates a direct anorthite recrystallization. Transmission electron microscopy and electron diffraction studies of nanocrystallites revealed that the transformation path is favored by the structural similarities of phases. In particular, the pseudolayers of gehlenite have a major orientation relationship with the initial metakaolinite layers. The gehlenite axis, [001]G, is parallel to the metakaolinite axis, [001]A. This direct transition is favored by the existence of Si tetrahedral units and 4–fold–coordinated Al in both structures. Ca atoms, initially in the interlayer spacing of metakaolinite, remain in the interlayers of gehlenite. During the second transformation step, anorthite recrystallizes from gehlenite with axis [020]A parallel to [210]G. It is proposed that this orientation relationship is favored by the orientation and shape of Ca-atom channels through both structures, along [001]G and [100]A axes.

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