Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals

2006 ◽  
Vol 527-529 ◽  
pp. 43-46 ◽  
Author(s):  
A. Gupta ◽  
E. Semenas ◽  
Ejiro Emorhokpor ◽  
J. Chen ◽  
Ilya Zwieback ◽  
...  
Keyword(s):  
Single Crystals ◽  
Growth Process ◽  
Large Diameter ◽  
Growth Technique ◽  
Rocking Curve ◽  
X Ray ◽  
The Past ◽  
Type 3 ◽  
Insulating Properties

Over the past year, II-VI has transitioned from 2” to 3” commercial SiC substrates. Large-diameter semi-insulating 6H-SiC and n-type 4H-SiC single crystals are grown using the Advanced PVT growth process. Expansion of boule diameter from 2 to 3 and up to 4.25 inches has been carried out using a specially designed growth technique. Stable semi-insulating properties in 6H-SiC are achieved by precise vanadium compensation. The technique of compensation is optimized to produce a controlled and spatially uniform distribution of vanadium and high and spatially uniform electrical resistivity reaching 10 10 – 1011 ·cm. N-type 3-inch 4H-SiC crystals are grown using doping with nitrogen, and 3-inch 4H-SiC substrates show uniform resistivity of about 0.018 ·cm. The best quality semiinsulating (SI) 3” 6H-SiC substrates demonstrate micropipe density of 3 cm-2, and n-type 3” 4H-SiC substrates - about 1 cm-2. X-ray rocking curve topography of the produced 3” SiC substrates is used for evaluation of their crystal quality.

scholarly journals Synthesis and structural characterization of Fe1-xMexBO3 (Me = Al, Sc) single crystals

2021 ◽  
Vol 2103 (1) ◽  
pp. 012069
Author(s):  
Yu Mogilenec ◽  
K Seleznyova ◽  
S Yagupov ◽  
K Seleznev ◽  
I Nauhatsky ◽  
...  
Keyword(s):  
Single Crystals ◽  
Fluorescence Analysis ◽  
Flux Growth ◽  
X Ray Diffraction ◽  
Growth Technique ◽  
X Ray ◽  
Synthesis Conditions ◽  
Initial Charge ◽  
Crystal Lattice Parameters

Abstract Fe1-xMexBO3 (Me = Al, Sc) single crystals have been synthesized by flux growth technique using B2O3-PbO-PbF2 solvent and approach of identical synthesis conditions. The contents of the diamagnetic ions Me in the initial charge of both compositions were equal, xcharge=0.05. The exact contents and crystal lattice parameters of the synthesized crystals were determined by X-ray fluorescence analysis and X-ray diffraction, respectively.

X-ray characterization of α-Fe2O3 single crystals containing 2.2% and 95% 57Fe

1998 ◽  
Vol 5 (3) ◽  
pp. 952-954
Author(s):  
J. Y. Zhao ◽  
X.-W. Zhang ◽  
M. Ando ◽  
Y. Yoda ◽  
S. Kikuta ◽  
...  
Keyword(s):  
Single Crystals ◽  
Bragg Scattering ◽  
Rocking Curve ◽  
X Ray ◽  
Fe Isotopes ◽  
Integrated Intensity ◽  
Scattering Study

α-Fe2O3 single crystals containing 2.2% and 95% 57Fe isotopes were characterized by means of X-ray topography, the diffraction rocking curve and the integrated intensity. These crystals were revealed to be nearly perfect and suitable for a further nuclear-resonant Bragg-scattering study.

Electrochemical Synthesis and Characterization of La2CuO4+δ Single Crystals

1999 ◽  
Vol 14 (4) ◽  
pp. 1221-1226 ◽  
Author(s):  
D. P. Scarfe ◽  
X. Xiong ◽  
W. J. Zhu ◽  
P. H. Hor ◽  
S. C. Moss ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Single Crystals ◽  
Oxidation Process ◽  
Synthesis And Characterization ◽  
High Quality ◽  
Rocking Curve ◽  
X Ray ◽  
Diffraction Peaks ◽  
Flowing Oxygen

An electrochemical oxidation technique was used to obtain bulk oxidized La2CuO4+δ single crystals from the as-grown crystals. Samples were prepared by galvanostatic oxidation with currents in the range 5–10 μA and with different charging times. Some samples were annealed at 110 °C in flowing oxygen. Small high-quality crystals were obtained from electrochemically oxidized larger crystals that contained microcracks. Transmission x-ray Laue photography and rocking curve measurements for several fundamental diffraction peaks were used to confirm the crystal quality. The Tc and bulk magnetic properties of samples at different stages in the oxidation process are reported. After annealing at 110 °C, a 15 K transition was observed.

X-Ray Rocking Curve Characterization of SiC Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 361-364
Author(s):  
Murugesu Yoganathan ◽  
Ping Wu ◽  
Ilya Zwieback
Keyword(s):  
Growth Process ◽  
Crystal Quality ◽  
Nondestructive Technique ◽  
Lattice Curvature ◽  
Rocking Curve ◽  
X Ray ◽  
Typical Variation

X-ray rocking curve characterization is a relatively fast and nondestructive technique that can be utilized to evaluate the crystal quality of SiC substrates. The contribution of lattice curvature to rocking curve broadening is estimated, and shown to be the major contribution to the measured broadening (FWHM). The feedback on lattice quality is used to optimize our SiC growth process. In the optimized growth runs, the typical variation in rocking curve sample angle Ω across the entire 3” diameter wafer is about 0.2 degrees. Possible mechanisms leading to changes in the lattice curvature are discussed.

Growth and Characterization of Shape-Controlled Single Crystals by a Micro-pulling-down Method

2011 ◽  
Vol 1309 ◽  
Author(s):  
Yuui Yokota ◽  
Hidehiko Tanaka ◽  
Masato Sato ◽  
Valery Chani ◽  
Kazushige Tota ◽  
...  
Keyword(s):  
Single Crystals ◽  
Single Phase ◽  
Circular Tube ◽  
Sapphire Crystal ◽  
Rocking Curve ◽  
High Transparency ◽  
X Ray ◽  
High Crystallinity ◽  
Shape Controlled

ABSTRACTShape-controlled CaF2 and sapphire crystals were grown by a micro-pulling-down (μ-PD) method and the crystallinities were investigated. By the μ-PD method with crucibles which have special configurations, circular tube-shaped CaF2 crystal, square tube-shaped CaF2 crystal and square tube-shaped sapphire crystal with high transparency were obtained. The grown crystals indicated a single phase of CaF2 and Al2O3 in the XRD measurements. X-ray rocking curve of square tube-shaped sapphire indicated the crystal has no mosaic structure in the crystal and it has high crystallinity comparable to crystals grown by Cz method.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

X-ray topo-tomography studies of linear dislocations in silicon single crystals

2018 ◽  
Vol 51 (6) ◽  
pp. 1616-1622 ◽  
Author(s):  
Victor Asadchikov ◽  
Alexey Buzmakov ◽  
Felix Chukhovskii ◽  
Irina Dyachkova ◽  
Denis Zolotov ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
High Resolution ◽  
Single Crystals ◽  
Complete Characterization ◽  
Reconstruction Technique ◽  
Algebraic Reconstruction Technique ◽  
X Ray ◽  
Laboratory Setup ◽  
Simultaneous Algebraic Reconstruction Technique

This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventional laboratory setup and the high-resolution X-ray image-detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi–Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.

Sign in / Sign up

Export Citation Format

Share Document