Laser Fabrication of Low Resistivity Electrode on Glass

A method for low resistivity resistor on transparent substrate with laser induced plasma assisted by ablation and laser annealing was described. The diffusion distribution for metallization was measured with XPS. The surface profile was analysed with SEM. The minimum resistivity we got was 0.1 /Sq. It demonstrates that the electronic thin film obtained has a very good conductivity. The most important factors for forming electrically conducting films on the transparent substrate are laser fluence, beam scanning and pulse repetition rate. This technology will be useful in the fabrication of LCD electrode, glass defused resistor and circuit on glass.

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Laser annealing of metal oxide thin film transistor

Chinese Journal of Liquid Crystals and Displays ◽

10.37188/yjyxs20203512.1211 ◽

2020 ◽

Vol 35 (12) ◽

pp. 1211-1221

Author(s):

Hong-long NING ◽

◽

Yu-xi DENG ◽

Jian-lang HUANG ◽

Zi-long LUO ◽

...

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Laser Annealing ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Metal Oxide Thin Film

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Atomic emission stratigraphy by laser-induced plasma spectroscopy: Quantitative depth profiling of metal thin film systems

Applied Surface Science ◽

10.1016/j.apsusc.2014.01.125 ◽

2014 ◽

Vol 302 ◽

pp. 189-193 ◽

Cited By ~ 16

Author(s):

Tristan O. Nagy ◽

Ulrich Pacher ◽

Hannes Pöhl ◽

Wolfgang Kautek

Keyword(s):

Thin Film ◽

Depth Profiling ◽

Atomic Emission ◽

Plasma Spectroscopy ◽

Laser Induced Plasma ◽

Metal Thin Film

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Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.161437 ◽

2021 ◽

pp. 161437

Author(s):

J. Antonowicz ◽

P. Zalden ◽

K. Sokolowski-Tinten ◽

K. Georgarakis ◽

R. Minikayev ◽

...

Keyword(s):

Thin Film ◽

Metallic Glass ◽

Laser Annealing ◽

Pulsed Laser ◽

Pulsed Laser Annealing ◽

Ultrashort Pulsed Laser

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Intelligent Profile Measurement for Wide-Area Resist Surface Using Multi-Sensor AFM System

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.381-382.407 ◽

2008 ◽

Vol 381-382 ◽

pp. 407-410

Author(s):

Shu Jie Liu ◽

K. Watanabe ◽

Satoru Takahashi ◽

Kiyoshi Takamasu

Keyword(s):

Thin Film ◽

Semiconductor Industry ◽

Surface Profile ◽

Vertical Direction ◽

Profile Measurement ◽

Measuring Device ◽

Scanning Method ◽

Angle Measuring ◽

Experimental Apparatus ◽

Sensor Errors

In the semiconductor industry, a device that can measure the surface-profile of photoresist is needed. Since the photoresist surface is very smooth and deformable, the device is required to measure vertical direction with nanometer resolution and not to damage it at the measurement. We developed the apparatus using multi-cantilever and white light interferometer to measure the surface-profile of thin film. But, this system with scanning method suffers from the presence of moving stage and systematic sensor errors. So, in this paper, an error separation approach used coupled distance sensors, together with an autocollimator as an additional angle measuring device, was consulted the potentiality for self-calibration of multi-cantilever. Then, according to this method, we constructed the experimental apparatus and do the measurement on the resist film. The results demonstrated the feasibility that the constructed multi-ball-cantilever AFM system combined with an autocollimator could measure the thin film with high accuracy.

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