FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS

2007 ◽  
Vol 556-557 ◽  
pp. 363-366 ◽  
Author(s):  
Jörg Pezoldt ◽  
Christian Förster ◽  
Volker Cimalla ◽  
Florentina Will ◽  
Ralf Stephan ◽  
...  
Keyword(s):  
Residual Stress ◽  
Internal Stress ◽  
Thin Layers ◽  
Quality Factors ◽  
Resonant Frequencies ◽  
Suitable Technique

The resonant frequencies and quality factors of MEMS and NEMS depend critically on the layer quality and the residual stress in the SiC/Si heterostructure. It is demonstrated, that FTIRellipsometry is a suitable technique for monitoring the inhomogeneous residual stress inside SiC/Si heterostructures containing thin layers and their variation with during processing.

scholarly journals Residual Stress and Tribological Performance of ZrN Coatings Produced by Reactive Bipolar Pulsed Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6462
Author(s):  
Anna Maria Laera ◽  
Marcello Massaro ◽  
Domenico Dimaio ◽  
Aleksandar Vencl ◽  
Antonella Rizzo
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Internal Stress ◽  
Duty Cycle ◽  
Ceramic Coatings ◽  
Progressive Increase ◽  
Tribological Performance ◽  
Thin Layers ◽  
Voltage Waveform

In the past few decades, ZrN thin films have been identified as wear resistant coatings for tribological applications. The mechanical and tribological properties of ZrN thin layers depend on internal stress induced by the adopted deposition techniques and deposition parameters such as pressure, temperature, and growth rate. In sputtering deposition processes, the selected target voltage waveform and the plasma characteristics also play a crucial influence on physical properties of produced coatings. In present work, ZrN thin films, obtained setting different values of duty cycle in a reactive bipolar pulsed dual magnetron sputtering plant, were investigated to evaluate their residual stress through the substrate curvature method. A considerable progressive increase of residual stress values was measured at decreasing duty cycle, attesting the significant role of voltage waveform in stress development. An evident correlation was also highlighted between the values of the duty cycle and those of wear factor. The performed analysis attested an advantageous effect of internal stress, having the samples with high compressive stress, higher wear resistance. A downward trend for wear rate with the increase of internal residual stress was observed. The choice of suitable values of duty cycle allowed to produce ceramic coatings with improved tribological performance.

Performance Modification of SiC MEMS

2009 ◽  
Vol 615-617 ◽  
pp. 621-624 ◽  
Author(s):  
Florentina Niebelschütz ◽  
Klemens Brueckner ◽  
Volker Cimalla ◽  
Matthias A. Hein ◽  
Jörg Pezoldt
Keyword(s):  
Residual Stress ◽  
Resonant Frequency ◽  
Epitaxial Growth ◽  
Quality Factor ◽  
Growth Conditions ◽  
Mems Devices ◽  
Quality Factors ◽  
Resonant Frequencies ◽  
Raman Analysis

The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the SiC-layers grown on Si(111) by manipulating the nucleation conditions and growth conditions with Ge deposition prior to the carbonization and epitaxial growth. Previous Raman analysis of the SiC-layers and measured resonant frequencies and quality factors of the processed MEMS show a dependence on the Ge amount at the interface of the Si/SiC heterostructure, which allows to adjust the MEMS properties to the requirements needed for certain applications.

scholarly journals Simple Non-Destructive Method of Ultrathin Film Material Properties and Generated Internal Stress Determination Using Microcantilevers Immersed in Air

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 486 ◽  
Author(s):  
Ivo Stachiv ◽  
Lifeng Gan
Keyword(s):  
Internal Stress ◽  
Quality Factor ◽  
Ultrathin Films ◽  
Material Properties ◽  
Ultrathin Film ◽  
Film Deposition ◽  
Film Material ◽  
Quality Factors ◽  
Resonant Frequencies ◽  
Film Density

Recent progress in nanotechnology has enabled to design the advanced functional micro-/nanostructures utilizing the unique properties of ultrathin films. To ensure these structures can reach the expected functionality, it is necessary to know the density, generated internal stress and the material properties of prepared films. Since these films have thicknesses of several tens of nm, their material properties, including density, significantly deviate from the known bulk values. As such, determination of ultrathin film material properties requires usage of highly sophisticated devices that are often expensive, difficult to operate, and time consuming. Here, we demonstrate the extraordinary capability of a microcantilever commonly used in a conventional atomic force microscope to simultaneously measure multiple material properties and internal stress of ultrathin films. This procedure is based on detecting changes in the static deflection, flexural and torsional resonant frequencies, and the corresponding quality factors of the microcantilever vibrating in air before and after film deposition. In contrast to a microcantilever in vacuum, where the quality factor depends on the combination of multiple different mechanical energy losses, in air the quality factor is dominated just by known air damping, which can be precisely controlled by changing the air pressure. Easily accessible expressions required to calculate the ultrathin film density, the Poisson’s ratio, and the Young’s and shear moduli from measured changes in the microcantilever resonant frequencies, and quality factors are derived. We also show that the impact of uncertainties on determined material properties is only minor. The validity and potential of the present procedure in material testing is demonstrated by (i) extracting the Young’s modulus of atomic-layer-deposited TiO2 films coated on a SU-8 microcantilever from observed changes in frequency response and without requirement of knowing the film density, and (ii) comparing the shear modulus and density of Si3N4 films coated on the silicon microcantilever obtained numerically and by present method.

scholarly journals Simple and Versatile Analytical Method for Monitoring the Deposition of Thin Layers by Optical Measurement and Calculation of Residual Stress

2021 ◽  
Vol 725 ◽  
pp. 138635
Author(s):  
Quentin Hatte ◽  
Mireille Richard-Plouet ◽  
Pierre-Yves Jouan ◽  
Pascal Casari ◽  
Pierre-Antoine Dubos
Keyword(s):  
Residual Stress ◽  
Analytical Method ◽  
Optical Measurement ◽  
Thin Layers

Analysis of a circular microstrip antenna on isotropic or uniaxially anisotropic substrate using neurospectral approach

2013 ◽  
Vol 33 (1/2) ◽  
pp. 567-580 ◽  
Author(s):  
Sami Bedra ◽  
Siham Benkouda ◽  
Tarek Fortaki
Keyword(s):  
Resonant Frequency ◽  
Quality Factor ◽  
Microstrip Antenna ◽  
Numerical Results ◽  
Spectral Domain ◽  
Quality Factors ◽  
Resonant Frequencies ◽  
Content Type ◽  
Anisotropic Substrate ◽  
Circular Microstrip Antenna

Purpose – The paper aims to propose an artificial neural network (ANN) in conjunction with spectral domain formulation for fast and accurate determination of the resonant frequency and quality factor of circular microstrip antenna printed on isotropic or anisotropic substrate. This neurospectral approach reduces the problem complexity. Design/methodology/approach – The moment method implemented in the spectral domain provides good accuracy but its computational cost is high due to the evaluation of the slowly decaying integrals and the iterative nature of the solution process. The paper introduces the electromagnetic knowledge combined with ANN in the analysis of circular microstrip antenna on isotropic or uniaxially anisotropic substrate to reduce the complexity of the spectral approach and to minimize the CPU time necessary to obtain the numerical results. Findings – The resonant frequency results obtained from the neural model are in very good agreement with the experimental and theoretical results available in the literature. Finally, numerical results for the substrate anisotropy effect on the resonant frequency, quality factor and radiation pattern are also presented. Originality/value – The paper develops fast and accurate model based on ANN technique to calculate the resonant frequencies and quality factors of circular microstrip antennas. ANN is used to model the relationship between the parameters of the microstrip antenna and the resonant frequencies and quality factors obtained from the spectral domain approach. This relatively simple model allows designers to predict accurately the resonant frequencies and quality factors for a given design without having to develop or run the spectral method codes themselves. The main advantages of the method are: less computing time than the spectral model, results with accuracy equivalent to that of full-wave models and cost effectiveness, since the client can use a simple PC for implementation. Another advantage of the proposed ANN model is that it takes into account the uniaxial anisotropy in the substrate without increasing the network size. This is done by combining ANN with electromagnetic knowledge.

X-ray Residual Stress Analysis of Zn-Ni Alloy Electroplating Layers

1989 ◽  
Vol 33 ◽  
pp. 171-175
Author(s):  
Toshihiko Sasaki ◽  
Makoto Kuramoto ◽  
Yasuo Yoshioka
Keyword(s):  
Residual Stress ◽  
Corrosion Resistance ◽  
Stress Analysis ◽  
Stress Measurement ◽  
Thin Layers ◽  
High Corrosion Resistance ◽  
Ray Method ◽  
X Ray ◽  
Ni Alloy ◽  
Residual Stress Analysis

Zn-Ni-alloy electroplated steels are one of the surface-treated materials with a high corrosion resistance and are mostly used for automobiles. It is said that the corrosion resistance is more than four times as great as that of Zn-plated steels. Concerning x-ray stress measurement, Kyono et al reported the result of measurement on y (552) planes and showed that the sin2φ diagram was severely curved.X-ray stress analysis in surface-treated materials will become more important. Some problems, however, remain to be studied when we apply the x-ray method to thin layers. For example, the effective x-ray penetration depth may be different from that in ordinary materials. And complex gradients of stresses and compositions may exist.

scholarly journals Mathematical and numerical framework for metasurfaces using thin layers of periodically distributed plasmonic nanoparticles

2016 ◽  
Vol 472 (2193) ◽  
pp. 20160445 ◽  
Author(s):  
Habib Ammari ◽  
Matias Ruiz ◽  
Wei Wu ◽  
Sanghyeon Yu ◽  
Hai Zhang
Keyword(s):  
Boundary Condition ◽  
Spectral Properties ◽  
Thin Layers ◽  
Optical Scattering ◽  
Plasmonic Nanoparticles ◽  
Type Operator ◽  
Impedance Boundary Condition ◽  
Resonant Frequencies ◽  
Impedance Boundary ◽  
Conducting Plate

In this paper, we derive an impedance boundary condition to approximate the optical scattering effect of an array of plasmonic nanoparticles mounted on a perfectly conducting plate. We show that at some resonant frequencies the impedance blows up, allowing for a significant reduction of the scattering from the plate. Using the spectral properties of a Neumann–Poincaré type operator, we investigate the dependency of the impedance with respect to changes in the nanoparticle geometry and configuration.

Electrofluidic Assembly of Nanoelectromechanical Systems

2001 ◽  
Vol 687 ◽  
Author(s):  
Stephane Evoy ◽  
Ben Hailer ◽  
Martin Duemling ◽  
Benjamin R. Martin ◽  
Thomas E. Mallouk ◽  
...  
Keyword(s):  
Nanoelectromechanical Systems ◽  
Quality Factors ◽  
Top Down ◽  
High Quality ◽  
Resonant Frequencies ◽  
Surface Machining ◽  
Sensor Applications ◽  
Surface Assembly ◽  
Manufacturing Technologies ◽  
20 Nm

AbstractRecent advances in surface nanomachining have allowed the fabrication of mechanical structures with dimensions reaching 20 nm, and resonant frequencies in the 100s of MHz. Structural issues prevent the “top-down” surface machining of high-quality NEMS resonators. Such systems are alternatively to be bestowed by “bottom-up” manufacturing technologies. We report the surface assembly of RF-range NEMS. Using electrofluidic assembly, we have successfully positioned Rh mechanical beams onto specific sites of a silicon circuit. With diameters as small as 250 nm and lengths varying from 2 to 3 [.proportional]m, preliminary results show mechanical resonances ranging from 5 MHz to 80 MHz, and quality factors reaching 500. We also report the development of nanostructured NEMS for sensor applications, and present strategies for their deployment in integrative nanosystems.

scholarly journals Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on and Silicon

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1072
Author(s):  
Sergio Sapienza ◽  
Matteo Ferri ◽  
Luca Belsito ◽  
Diego Marini ◽  
Marcin Zielinski ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Young’S Modulus ◽  
Defect Density ◽  
Young's Modulus ◽  
Complete Characterization ◽  
Thin Layers ◽  
Silicon Substrates ◽  
Mems Fabrication ◽  
Clamped Beams

3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young’s modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on <100> and <111> oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young’s modulus can be obtained by Hooke’s law. From these measurements, it has been observed that Young’s modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young’s modulus were obtained in this work, even for very thin layers (thinner than 1 mm), and this can give the opportunity to realize very sensitive strain sensors.

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