scholarly journals Measuring complex for determining the characteristics of high-voltage silicon carbide Schottky diodes in impulse modes

2021 ◽  
pp. 67-73
Author(s):  
Vitaliy Zotin ◽  
Alexander Drakin ◽  
Sergei Rybalka ◽  
Andrey Demidov ◽  
Evgeniy Kulchenkov
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Schottky Diodes ◽  
Reverse Voltage ◽  
Current Rise ◽  
Measuring Complex ◽  
Rise Rate ◽  
First Time

This paper describes a developed automated research measuring complex that allows one to determine the parameters of currents, voltages and power of silicon carbide Schottky diodes when applied reverse voltage impulses with amplitudes from 400 to 1000 V. The research measuring complex was tested on DDSH411A91 («GRUPPA KREMNY EL») and C3D1P7060Q (Cree/Wolfspeed) silicon carbide Schottky diodes and allows to determine their maximum values of the rate of rise of reverse voltage dV/dt (877 V/ns and 683 V/ns). Also, the maximum values of the current rise rate dI/dt were determined for DDSH411A91 (3.24 A/ns) and C3D1P7060Q (3.72 A/ns) diodes. For the first time it was established that, when a reverse voltage impulse with an amplitude of 1000 V is applied, the maximum values of instantaneous fullpower reach 1419 VA for the DDSH411A91 diode and 1638 VA for the C3D1P7060Q diode.

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

2007 ◽  
pp. 873-876 ◽  
Author(s):  
Konstantin V. Vassilevski ◽  
I. Nikitina ◽  
A.B. Horsfall ◽  
Nicolas G. Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Schottky Diodes

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

2007 ◽  
Vol 556-557 ◽  
pp. 865-868
Author(s):  
Gheorghe Brezeanu ◽  
M. Brezeanu ◽  
F. Udrea ◽  
G. Amaratunga ◽  
C. Boianceanu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Plate Technique ◽  
First Time

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.

scholarly journals Высоковольтные (1600 V) размыкатели тока с субнаносекундным (150 ps) быстродействием на основе 4H-SiC

2018 ◽  
Vol 44 (3) ◽  
pp. 3
Author(s):  
П.А. Иванов ◽  
О.И. Коньков ◽  
Т.П. Самсонова ◽  
А.С. Потапов
Keyword(s):  
Silicon Carbide ◽  
Drift Velocity ◽  
High Voltage ◽  
Measured Current ◽  
Breakdown Time ◽  
P Type ◽  
Short Time ◽  
First Time

AbstractHigh-voltage (1600 V) diodes based on epitaxial 4 H -SiC p ^++– p ^+– n _0– n ^+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4 H -SiC of p type is experimentally estimated for the first time: v _ sp = 3 × 10^6 cm/s.

scholarly journals SILICON CARBIDE SCHOTTKY BARRIER DIODE

2005 ◽  
Vol 15 (04) ◽  
pp. 821-866 ◽  
Author(s):  
Jian H. Zhao ◽  
Kuang Sheng ◽  
Ramon C. Lebron-Velilla
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Gas Sensors ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes ◽  
Performance Parameters ◽  
Development History ◽  
The Status

This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes

2020 ◽  
Vol 46 (3) ◽  
pp. 287-289 ◽  
Author(s):  
V. V. Kozlovski ◽  
O. Korol’kov ◽  
K. S. Davidovskaya ◽  
A. A. Lebedev ◽  
M. E. Levinshtein ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
High Power ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Irradiation Temperature

scholarly journals High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 790-794 ◽  
Author(s):  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
Paul Annus ◽  
Raul Land ◽  
Toomas Rang
Keyword(s):  
Vertical Integration ◽  
High Voltage ◽  
Recovery Time ◽  
Analytical Approach ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Estimation Of Parameters ◽  
Reverse Voltage ◽  
Zero Bias ◽  
Reverse Recovery Time

In the present work we have considered the prototype of the high-voltage diode stack made on the basis of commercial SiC Schottky diodes. Implementation of vertical integration for four diode chips yielded stack with the reverse current of 25 μA under reverse voltage of 6 kV. The capacitance of the stack at zero bias is reduced more than three times in comparison with initial diodes. Reverse recovery time of the stack was 8.0 ns. This paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture.

scholarly journals О защите высоковольтных мезаструктурных 4H-SiC-приборов от поверхностного пробоя: прямая фаска

2020 ◽  
Vol 54 (2) ◽  
pp. 207
Author(s):  
Н.М. Лебедева ◽  
Н.Д. Ильинская ◽  
П.А. Иванов
Keyword(s):  
Numerical Simulation ◽  
Silicon Carbide ◽  
Electric Field ◽  
Field Distribution ◽  
High Voltage ◽  
Electric Field Distribution ◽  
Schottky Diodes ◽  
Dry Etching ◽  
Edge Termination ◽  
Protection Method

Abstract The prospects for the protection of high-voltage 4 H -SiC-devices from edge breakdown via the formation of mesa structures with inclined walls (negative beveling) are considered. Numerical simulation of the spatial electric-field distribution in high-voltage (~1500V) reverse-biased mesa-epitaxial p ^+– p – n _0– n ^+ 4 H -SiC diodes is performed. It is shown that negative beveling with small angles of less than 10° from the plane of the p – n _0 junction makes it possible to reduce severalfold the surface edge electric field as compared to that in the bulk. A combined protection method is suggested as the edge-termination technique for 4 H -SiC diodes with a p ^+– n _0– n ^+ structure, Schottky diodes with an n _0 blocking base, and bipolar n ^+– p – n _0 transistors via the implantation of boron along with negative beveling. The possibility of fabricating mesa structures with inclined walls via the photolithography and dry etching of silicon carbide is briefly discussed.

High-Voltage Capacitive Nonlinear Transmission Lines for RF Generation Based on Silicon Carbide Schottky Diodes

2019 ◽  
Vol 47 (1) ◽  
pp. 566-573 ◽  
Author(s):  
Lucas R. Raimundi ◽  
Jose O. Rossi ◽  
Elizete G. Lopes Rangel ◽  
Leandro C. Silva ◽  
Edl Schamiloglu
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Transmission Lines ◽  
Schottky Diodes ◽  
Nonlinear Transmission Lines ◽  
Nonlinear Transmission

scholarly journals Влияние температуры протонного облучения на характеристики мощных высоковольтных карбид-кремниевых диодов Шоттки

2020 ◽  
Vol 46 (6) ◽  
pp. 35
Author(s):  
В.В. Козловский ◽  
O. Корольков ◽  
К.С. Давыдовская ◽  
A.А. Лебедев ◽  
М.Е. Левинштейн ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Radiation Resistance ◽  
Schottky Diodes ◽  
Irradiation Temperature ◽  
Ohmic Resistance ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
First Time

For the first time, the effect of irradiation at high temperature (“hot irradiation”) by protons on the capacitance – voltage and current – ​​voltage characteristics of silicon carbide based semiconductor devices was studied. We investigated commercial high-voltage (blocking voltage of 1700 V) integrated 4H-SiC Schottky diodes. Irradiation was carried out by protons with an energy of 15 MeV at temperatures of 20-400 ° C. It has been established that the most sensitive to radiation parameter determining the radiation resistance of devices is the ohmic resistance of the base, which increases monotonically with increasing radiation dose D. It is shown that during “hot” irradiation, the radiation resistance of diodes significantly exceeds the resistance of diodes in low-temperature (“cold”) irradiation . It was concluded that, with increasing irradiation temperature, the rate of formation of deep centers in the upper half of the band gap of silicon carbide decreases.

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