Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals

2008 ◽  
Vol 573-574 ◽  
pp. 269-277 ◽  
Author(s):  
Fuccio Cristiano ◽  
El Mehdi Bazizi ◽  
Pier Francesco Fazzini ◽  
Simona Boninelli ◽  
Ray Duffy ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
High Temperatures ◽  
Rapid Thermal Annealing ◽  
Silicon Surface ◽  
Experimental Results ◽  
Extended Defects ◽  
Initial Number ◽  
Temperature Ramp ◽  
Recombination Length ◽  
Very High

In this paper, we investigate the evolution of extended defects during a millisecond Flash anneal after a preamorphising implant. The experimental results, supported by predictive simulations, indicate that during the ultra-fast temperature ramp-up and rump-down occurring in a millisecond Flash anneal, the basic mechanisms that control the growth and evolution of extended defects are not modified with respect to the relatively slower annealing processes, such as “soak” and “spike” Rapid Thermal Annealing. In addition, we have observed a decrease in the number of trapped interstitials in the End-Of-Range (EOR) defects when decreasing the Ge+ amorphisation energy from 30 keV down to 2 keV. This result is ascribed to two concomitant phenomena: (i) the increase of the initial number of interstitials, Ni, created by the amorphisation step, when the implant energy is decreased and (ii) the efficient interstitial annihilation at the silicon surface, whose recombination length, Lsurf, is in the nanometer range even at the very high temperatures employed in millisecond Flash anneals.

scholarly journals Improved Silicon Surface Passivation of APCVD Al2O3 by Rapid Thermal Annealing

2016 ◽  
Vol 92 ◽  
pp. 317-325 ◽  
Author(s):  
Lachlan E. Black ◽  
Thomas Allen ◽  
Keith R. McIntosh ◽  
Andres Cuévas
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Silicon Surface Passivation

Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects

1999 ◽  
Vol 568 ◽  
Author(s):  
Aditya Agarwal ◽  
Hans-J. Gossmann ◽  
Anthony T. Fiory
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Driving Forces ◽  
Recent Experimental Data ◽  
Enhanced Diffusion ◽  
Temperature Ramp ◽  
Rate Effects ◽  
Low Energies ◽  
Ultra Shallow Junctions ◽  
P Type

ABSTRACTOver the last couple of years rapid thermal annealing (RTA) equipment suppliers have been aggressively developing lamp-based furnaces capable of achieving ramp-up rates on the order of hundreds of degrees per second. One of the driving forces for adopting such a strategy was the experimental demonstration of 30nm p-type junctions by employing a ramp-up rate of ≈400°C/s. It was subsequently proposed that the ultra-fast temperature ramp-up was suppressing transient enhanced diffusion (TED) of boron which results from the interaction of the implantation damage with the dopant. The capability to achieve very high temperature ramp-rates was thus embraced as an essential requirement of the next generation of RTA equipment.In this paper, recent experimental data examining the effect of the ramp-up rate during spike-and soak-anneals on enhanced diffusion and shallow junction formation is reviewed. The advantage of increasing the ramp-up rate is found to be largest for the shallowest, 0.5-keV, B implants. At such ultra-low energies (ULE) the advantage arises from a reduction of the total thermal budget. Simulations reveal that a point of diminishing return is quickly reached when increasing the ramp-up rate since the ramp-down rate is in practice limited. At energies where TED dominates, a high ramp-up rate is only effective in minimizing diffusion if the implanted dose is sufficiently small so that the TED can be run out during the ramp-up portion of the anneal; for larger doses, a high ramp-up rate only serves to postpone the TED to the ramp-down duration of the anneal. However, even when TED is minimized at higher implant energies via high ramp-up rates, the advantage is unobservable due to the rather large as-implanted depth. It appears then that while spike anneals allow the activation of ULE-implanted dopants to be maximized while minimizing their diffusion the limitation imposed by the ramp-down rate compromises the advantage of very aggressive ramp-up rates.

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

Anatase and rutile TiO2 monodisperse microspheres by rapid thermal annealing: A method to avoid sintering at high temperatures

2015 ◽  
Vol 141 ◽  
pp. 203-206 ◽  
Author(s):  
Carmen R. Tubío ◽  
Francisco Guitián ◽  
José Ramón Salgueiro ◽  
Alvaro Gil
Keyword(s):  
Thermal Annealing ◽  
High Temperatures ◽  
Rapid Thermal Annealing ◽  
Rutile Tio2

Defect Control During Epitaxial Regrowth by Rapid Thermal Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
H. Baumgart ◽  
G. K. Celler ◽  
D. J. Lischner ◽  
McD. Robinson ◽  
T. T. Sheng
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Laser Annealing ◽  
Solid Phase ◽  
Good Control ◽  
Temperature Gradients ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Incoherent Light ◽  
Defect Control

ABSTRACTRapid Thermal Annealing (RTA) with tungsten halogen lamps provides excellent regrowth of silicon layers damaged by ion implantation. In addition to minimizing dopant redistribution, the inherent advantage of this technique is good control of temperature gradients. The latter is instrumental in reducing the density of extended defects in the annealed samples. In contrast, solid phase laser annealing, which involves steep temperature gradients, always leaves interstitial dislocation loops and point defect clusters. We present a comparative study of crystal quality following laser processing and incoherent light annealing as well as furnace annealing of As, P and B ion implanted Si wafers.

Ripple Pyrometry for Rapid Thermal Annealing

1994 ◽  
Vol 342 ◽  
Author(s):  
A. T. Fiory ◽  
A.K. Nanda
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Experimental Results ◽  
Wafer Temperature

ABSTRACTRipple pyrometry was proposed by Accufiber as a method for measuring wafer temperature in lamp-heated ovens. The technique obtains the wafer temperature from the wafer emittance radiation by simultaneously determining the effective emittance of the wafer and suppressing the interference from reflected lamp radiation. This paper reviews the technique for rapid thermal annealing and presents experimental results on silicon wafers instrumented with thermocouples and on processing blanket-film monitor wafers.

Stress Gradients in SIO2 Thin Films Prepared by Thermal Oxidation and Subjected to Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
C.H. Bjorkman ◽  
J.T. Fitch ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Thermal Oxidation ◽  
Thermal Annealing ◽  
High Temperatures ◽  
Rapid Thermal Annealing ◽  
Thin Layers ◽  
Stress Gradients ◽  
Beam Bending ◽  
Thermally Grown

ABSTRACTWe have studied stress gradients in thermally grown SiO2 thin films and relaxation of the stress by rapid thermal annealing. These properties were examined by incrementally etching back the SiO2 films and performing infrared spectroscopy and beam-bending measurements at each thickness. The thickness-averaged values measured were then deconvoluted to obtain stress values for thin layers of the SiO2 films. We observed steep stress gradients close to the Si/SiO2 interface for wet oxides which were similar to those previously studied in dry oxides. The stress gradients were steeper for films grown or annealed at high temperatures. In addition, we have been able to show that thin films (= 200 Å) relax more freely than thicker films (= 1000 Å), in which oxide close to the interface is prevented from relaxing by the oxide on top of it.

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