Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties

2009 ◽  
Vol 615-617 ◽  
pp. 443-446 ◽  
Author(s):  
Owen J. Guy ◽  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Michal Lodzinski ◽  
A. Castaing ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Physical Nature ◽  
Interface State ◽  
Electron Beam Evaporation ◽  
Layer Transfer ◽  
Mos Devices ◽  
State Densities ◽  
Scanning Electron

This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (LT) are reported. The physical nature of Si/SiC structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally, thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC.

Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices

2007 ◽  
Vol 556-557 ◽  
pp. 509-512 ◽  
Author(s):  
Owen J. Guy ◽  
T.E. Jenkins ◽  
Michal Lodzinski ◽  
A. Castaing ◽  
S.P. Wilks ◽  
...  
Keyword(s):  
Silicon Layer ◽  
Physical Nature ◽  
Interface State ◽  
Ion Scattering ◽  
Device Structure ◽  
Mos Devices ◽  
Blocking Voltage ◽  
State Densities ◽  
Medium Energy Ion Scattering ◽  
Recent Variation

The high density of interface states of thermally grown oxides on silicon carbide has prompted research into alternative oxidation methods and post oxidation anneals. One such alternative is oxidation of a deposited sacrificial silicon layer. A recent variation of this technique is a partial oxidation of the deposited Si layer, so that a thin Si layer remains between the SiO2 and SiC layers. If the SiO2/Si interface has lower interface state densities than the SiO2/SiC interface, the SiO2/Si/SiC hetero-structure could yield improved channel mobilities in MOS devices. Moreover, by correct optimization of the MOSFET device structure, breakdown can be designed to occur in the bulk SiC layer, thus maintaining a high blocking voltage. Post oxidation annealing in N2O is another technique often used to reduce interface state densities. However, little is known about the chemical and physical nature of these N2O oxidized dielectrics. Ellipsometric and Medium Energy Ion Scattering (MEIS) investigations of conventional SiO2/SiC interfaces compared with SiO2/Si/SiC hetero-junction structures and N2O oxidized samples are reported.

Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

Reduced interface state densities for remote microwave plasma silicon nitride

1992 ◽  
Vol 70 (10-11) ◽  
pp. 795-798 ◽  
Author(s):  
D. Landheer ◽  
J. A. Bardwell ◽  
I. Sproule ◽  
J. Scott-Thomas ◽  
W. Kwok ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Field Effect Transistors ◽  
Chemical Vapour ◽  
Depth Profiling ◽  
Interface State ◽  
State Density ◽  
Fixed Charge ◽  
Silicon Substrates ◽  
Plasma Chemical Vapour Deposition ◽  
State Densities

The interface state density and fixed charge density of films of a-Si3N4:H deposited on silicon substrates by remote microwave plasma chemical vapour deposition have been studied as a function of deposition and annealing temperature. Interface state densities (Dit as low as 9 × 1010 cm−2 eV−1 have been obtained for films deposited at 215 °C and annealed for 15 min at 500 °C. The films exhibited positive fixed charge levels (QN/q)> 1013 cm−2, increasing slightly with deposition temperature and decreasing slightly with annealing at temperatures from 500 to 700 °C. Fourier transform infrared spectroscopy and Auger depth profiling were used to study the impurities in the films and at the interface. Metal–insulator–silicon field effect transistors made with these films showed room temperature effective channel hole mobilities of 37 cm2 V−1 s−1.

The Effect of Solvent on the Morphology of Indium Oxide Deposited by Aerosol-assisted Chemical Vapour Deposition

2013 ◽  
Vol 66 (10) ◽  
pp. 1274 ◽  
Author(s):  
Iman A. Hassan ◽  
Arnold Ratnasothy ◽  
Davinder S. Bhachu ◽  
Sanjayan Sathasivam ◽  
Claire J. Carmalt
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Indium Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Oxide Films ◽  
Chemical Vapour ◽  
Film Morphology ◽  
Scanning Electron ◽  
Indium Oxide Films

Aerosol-assisted chemical vapour deposition (AACVD) reactions of InMe3 and a mono-functional or donor-functional alcohol have been investigated and the resulting film morphology studied using scanning electron microscopy. AACVD of InMe3 and 6 equivalents of the donor-functionalized alcohol HOCH2CH2NMe2 in toluene resulted in the deposition of transparent indium oxide films, with a slight brown tinge, at 450°C. In contrast, AACVD of InMe3 and 6 equivalents of MeOH in toluene resulted in no film growth. However, use of methanol as both the solvent and oxygen source via AACVD of InMe3 in MeOH at a range of temperatures (350–500°C) afforded crystalline transparent indium oxide films. Similarly, AACVD of InMe3 and 6 equivalents of HOCH2CH2NMe2 in MeOH resulted in transparent indium oxide films with better substrate coverage. The indium oxide films were analyzed by a range of techniques including scanning electron microscopy, glancing-angle X-ray powder diffraction, UV-visible spectroscopy, and wavelength dispersive analysis of X-rays, which confirmed the formation of cubic In2O3 with band-gaps in the range 3.51–3.60 eV. Scanning electron microscopy showed a variation in film morphology and indicated that both temperature and the use of methanol influenced the resulting microstructure. Sheet resistance and Hall effect measurements indicate that the films deposited at 450°C are suitable candidates for transparent conducting oxide materials.

Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

2013 ◽  
Vol 740-742 ◽  
pp. 691-694 ◽  
Author(s):  
Christian T. Banzhaf ◽  
Michael Grieb ◽  
Achim Trautmann ◽  
Anton J. Bauer ◽  
Lothar Frey
Keyword(s):  
Silicon Dioxide ◽  
Dielectric Breakdown ◽  
Interface State ◽  
Oxide Semiconductor ◽  
Breakdown Field ◽  
Flat Band ◽  
Mos Devices ◽  
State Densities ◽  
Mos Structures

This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (DIT) of 1*1011cm-2eV-1under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm.

scholarly journals PENGARUH KATALIS Co DAN Fe TERHADAP KARAKTERISTIK CARBON NANOTUBES DARI GAS ASETILENA DENGAN MENGGUNAKAN PROSES CATALYTIC CHEMICAL VAPOUR DEPOSITION (CCVD)

REAKTOR ◽  
2013 ◽  
Vol 14 (3) ◽  
pp. 234
Author(s):  
Tutuk Djoko Kusworo ◽  
Desmile Yusufina ◽  
Atyaforsa Atyaforsa
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Scanning Electron Microscopy ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Active Components ◽  
Nano Technology ◽  
Product Weight ◽  
Scanning Electron

EFFECT OF Co AND Fe ON CARBON NANOTUBES CHARACTERISTICS FROM ACETYLENE USING CATALYTIC CHEMICAL VAPOUR DEPOSITION (CCVD) PROCESS. Carbon Nanotubes (CNTs) is one of the most well known nano-technology applications which the most of attracting the attention of researchers, because it has more advantages than other materials. The application of the CNT has extended into various aspects, such as electronics, materials, biology and chemistry. This research uses a system of Catalytic Chemical Vapour Deposition (CCVD), which aims to determine the influence of Co and Fe as a catalyst and zeolite 4A as a support catalyst with acetylene gas (C2H2) as carbon source in the synthesis of Carbon Nanotubes (CNTs). In this experiment, used the ratio of acetylene gas and flow rate of N2 gas is 1:1 by weight of the catalyst Co/Zeolite and Fe/Zeolite amounted to 0.5 grams at the operating temperature of 700oC for 20 minutes. N2 gas serves to minimize the occurrence of oxidation reaction (explosion) when operating. From analysis result by Scanning Electron Microscopy (SEM) shows the CNTs formed a type of MWNT with different of diameter size and product weight, depending on the size of the active component concentration on the catalyst. The larger of active components produced CNTs with larger diameter, whereas product weight syntheses result smaller. Use of the catalyst Fe/Zeolite produce CNTs with a diameter larger than the catalyst Co/Zeolite.  Carbon Nanotubes (CNTs) merupakan salah satu aplikasi nanoteknologi yang paling terkenal dan banyak menarik perhatian para peneliti, karena memiliki beberapa kelebihan daripada material lainnya. Aplikasi dari CNT telah merambah ke berbagai aspek, seperti bidang elektronika, material, biologi dan kimia. Penelitian ini menggunakan sistem Catalytic Chemical Vapour Deposition (CCVD) yang bertujuan untuk mengetahui pengaruh variasi Cobalt (Co) dan Ferrum (Fe) sebagai katalis dan zeolit tipe 4A sebagai penyangga katalis dengan gas asetilen (C2H2) sebagai sumber karbon dalam sintesis carbon nanotubes (CNTs). Pada penelitian ini digunakan perbandingan laju alir gas asetilen dan gas N2 yaitu 1:1 dengan berat katalis Co/Zeolit  dan Fe/Zeolit masing-masing sebesar 0,5 gram pada suhu operasi 700 oC selama 20 menit. Dari hasil analisa Scanning Electron Microscopy (SEM) menunjukkan CNTs yang dihasilkan pada penelitian ini memiliki tipe Multi Walled Nano Tube (MWNT) dengan ukuran diameter dan berat produk yang berbeda, tergantung dari besarnya konsentrasi komponen aktif pada katalis. Semakin besar konsentrasi komponen aktif akan dihasilkan CNTs dengan diameter yang semakin  besar, sedangkan berat produk semakin kecil. Penggunaan katalis Fe/Zeolit dengan kalsinasi akan menghasilkan CNTs dengan diameter yang lebih besar daripada katalis Co/Zeolit.

Cutting Performances of Boron Doped Diamond-Coated Milling Tools in Machining Graphite

2011 ◽  
Vol 697-698 ◽  
pp. 458-461 ◽  
Author(s):  
Liang Wang ◽  
X.L. Lei ◽  
Bin Shen ◽  
Fang Hong Sun ◽  
Z.M. Zhang ◽  
...  
Keyword(s):  
Tool Life ◽  
Vapour Deposition ◽  
High Efficiency ◽  
Flank Wear ◽  
Chemical Vapour ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Hot Filament ◽  
Milling Tools ◽  
Scanning Electron

In this investigation, conventional microcrystalline diamond (MCD) and boron doped diamond (BDD) films are deposited onto commercially available cemented tungsten carbide (WC-Co) Ball-nose endmills by using hot filament chemical vapour deposition (HFCVD). The quality and properties of the as-deposited diamond film are characterized by field emission scanning electron microscope (FESEM) and Raman spectroscopy. Milling tests of graphite materials using MCD, BDD coated and uncoated tool are carried out. Experiment results reveal that BDD films possess higher adhesive strength to the substrate than that of MCD films, and the BDD coated mills allow to be given smaller flank wear and longer tool life, when compared with MCD coated and uncoated WC-Co tools. Cutting performances of WC-Co mills in graphite milling are greatly improved by BDD coating, and typically more than 10 times the tool life is obtained. The research results are of great significance for high efficiency and quality machining of graphite materials.

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