Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures
2013 ◽
Vol 740-742
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pp. 691-694
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Keyword(s):
This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (DIT) of 1*1011cm-2eV-1under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm.
2014 ◽
Vol 778-780
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pp. 595-598
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2015 ◽
Vol 821-823
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pp. 753-756
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Keyword(s):
2008 ◽
Vol 600-603
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pp. 597-602
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Keyword(s):
Keyword(s):
2002 ◽
Vol 09
(05n06)
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pp. 1637-1640
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2013 ◽
Vol 740-742
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pp. 695-698
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Keyword(s):
2009 ◽
Vol 615-617
◽
pp. 443-446
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2010 ◽
Vol 645-648
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pp. 821-824
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