Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

2008 ◽  
Vol 600-603 ◽  
pp. 611-614 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Annealing Process ◽  
Extended Defects ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Transmission Electron ◽  
Before And After ◽  
Activation Annealing ◽  
Shallow Groove

Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching analysis and transmission electron microscopy. Nitrogen and phosphorus ions are implanted in the 4H-SiC epilayers and then activation annealing is performed at 1670 °C. Linearly arrayed or clustered extended defects are found to be formed during the implantation/annealing process by comparing X-ray topography images taken before and after the process. It is confirmed that the defect arrays are formed underneath a shallow groove on the surface and consist of a high density of basal-plane Shockley-type stacking faults.

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

2009 ◽  
Vol 615-617 ◽  
pp. 477-480 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Basal Plane ◽  
Defect Formation ◽  
Stacking Faults ◽  
Annealing Process ◽  
Extended Defects ◽  
X Ray ◽  
Substrate Interface ◽  
Aluminum Ions ◽  
Activation Annealing

Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process

2010 ◽  
Vol 645-648 ◽  
pp. 323-326 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Single Layer ◽  
Annealing Treatment ◽  
Annealing Process ◽  
Extended Defect ◽  
Aluminum Ions ◽  
Transmission Electron ◽  
Activation Annealing ◽  
Nitrogen Phosphorus

Condition dependences of defect formation in 4H-SiC epilayer induced by the implantation/annealing process were investigated using synchrotron reflection X-ray topography and transmission electron microscopy. Nitrogen, phosphorus or aluminum ions were implanted in the 4H-SiC epilayers and then activation annealing was performed. To compare the implantation/annealing process, a sample receiving only the annealing treatment without the implantation was also performed. Two different crucibles (conventional and improved) were used in the annealing process. The formation of single layer Shockley-type stacking faults near the surface was found to have no ion-implantation condition or crucible dependence. The formation of BPD half-loops and the glide of pre-existing BPDs showed clear dependence on the crucibles.

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

2008 ◽  
Vol 600-603 ◽  
pp. 267-272 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Masahiro Nagano
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Formation ◽  
Grazing Incidence ◽  
Microscopic Structure ◽  
Threading Dislocation ◽  
Simultaneous Generation ◽  
Burgers Vector ◽  
X Ray ◽  
Transmission Electron

Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazing incidence synchrotron reflection X-ray topography and transmission electron microscopy. Frank-type faults, which are terminated by four Frank partials with a 1/4[0001] type Burgers vector with the same sign on four different basal planes, are confirmed to be formed by conversion of a 1c threading edge dislocation (TSD) in the substrate as well as simultaneous generation of a 1c TSD during epitaxy. The collation between the topography appearance and the microscopic structure and the variety of Frank faults are shown. Formation of carrot defects and threading dislocation clusters are also investigated.

Effects of Plasma Surface Treatment on the Self-forming Barrier Process in Porous SiOCH

2008 ◽  
Vol 1079 ◽  
Author(s):  
Junichi Koike ◽  
Junichi Koike ◽  
Zsolt Tökei
Keyword(s):  
Cross Section ◽  
Deposition Process ◽  
Plasma Damage ◽  
X Ray ◽  
Transmission Electron ◽  
Plasma Surface Treatment ◽  
Diffusion Barrier Layer ◽  
Before And After ◽  
Low K ◽  
Secondary Ion

ABSTRACTSelf-forming barrier process was carried out on a porous low-k material with the Cu-Mn alloys. The effects of various surface treatments were investigated in the sample having a pore size of 0.9 nm and a porosity of 25%. Before and after annealing, samples were analyzed in cross section with transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS). Concentration profile was also analyzed with time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The results indicated the penetration of Cu into the low-k interior during deposition, followed by the segregation of Cu at the low-k/Si interface during subsequent annealing. Although a diffusion barrier layer was formed and no further Cu penetration was not observed during annealing, initial Cu penetration in the deposition process was detrimental and should be prevented by restoring the plasma damage on the low-k surface.

Ordering and microwave dielectric properties of Ba(Ni1/3Nb2/3)O3 ceramics

1997 ◽  
Vol 12 (2) ◽  
pp. 518-525 ◽  
Author(s):  
In-Tae Kim ◽  
Yoon-Ho Kim ◽  
Su Jin Chung
Keyword(s):  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Nucleation And Growth ◽  
Annealing Process ◽  
Network Analyzer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microwave Dielectric ◽  
Transmission Electron ◽  
Rich Liquid

Ordering and microwave dielectric properties of Ba(Ni1/3Nb2/3)O3 have been investigated using x-ray diffraction, transmission electron microscopy, energy-dispersive spectroscopy, and a network analyzer. Samples sintered at 1400 °C for 2 h were disordered and showed the presence of Nb-rich liquid phase at grain boundary junctions. Degree of ordering increased with following annealing at 1300 °C. Growth of the ordered region during the annealing process was discussed in terms of nucleation and growth. A long-range order parameter was calculated using structure factor. Measurements of microwave dielectric properties showed that permittivity and temperature coefficient of resonant frequency decreased with ordering, and quality factor increased with ordering. The correlation between microwave dielectric properties and ordering was discussed in terms of covalency of bonding, inhomogeneous charge distribution, and defects concentration.

Characterization of Ni-P and Ni-P-Al2O3 Heat Treated Layers

2017 ◽  
Vol 1143 ◽  
pp. 26-31
Author(s):  
Lucica Balint ◽  
Gina Genoveva Istrate
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Corrosion Resistance ◽  
Composite Coatings ◽  
Treatment Temperature ◽  
Initial State ◽  
X Ray ◽  
Transmission Electron ◽  
Heat Treated ◽  
Before And After

Research has shown the relationship among hardness, usage and corrosion resistance Ni-P-Al2O3 composite coatings on steel support heat treated. The electroless strips were heat treated at 200°C, 300°C, 400°C, 500°C and 600°C. Further studies on corrosion, hardness and usage revealed changes in properties, compared to the initial state, both on the strips coated with Ni-P and the ones coated with Ni-P-Al2O3 composite. The samples have been studied before and after the heat treatment via Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Energy Dispersive X-ray Analysis (EDX) and X-Ray Diffraction (XRD). The results show that untreated Ni-P layers exhibit strong corrosion resistance, while hardness and usage increase with heat treatment temperature, with a peak at 400 °C. Using suspended particles co-deposition, led to new types of layers, some with excellent hardness and usage properties. Corrosion resistance increase with heat treatment. Coating layers can be adjusted to the desired characteristics, by selecting proper parameters for the expected specific results.

Electrical and Structural Properties of MeV Si+ Ion Implantation in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Aditya Agarwal ◽  
S. Koveshnikov ◽  
K. Christensen ◽  
G. A. Rozgonyi
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Structural Defects ◽  
Extended Defects ◽  
Device Layer ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Si Ion Implantation

AbstractThe electrical properties of residual MeV ion implantation damage in Si after annealing from 600 to 1100°C for 1 hour have been investigated using Deep Level Transient Spectroscopy, Capaciatance-Voltage, and Current-Voltage measurements. These data have been correlated with structural defects imaged by Transmission Electron Microscopy. It is shown that at least 4 deep levels are associated with the buried layer of extended defects after annealing at 800, 900, 1000 and 1100°C. Additionally, for the wafer annealed at 800°C at least 5 more deep level centers are present in the device layer above the buried defects.

Secondary Defect Formation And Gettering in Mev Self-Implanted Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
R. A. Brown ◽  
O. Kononchuk ◽  
Z. Radzimski ◽  
G. A. Rozgonyi ◽  
F. Gonzalez
Keyword(s):  
Defect Formation ◽  
Extended Defects ◽  
Near Surface ◽  
Projected Range ◽  
Annealing Conditions ◽  
Float Zone ◽  
Transmission Electron ◽  
Secondary Defect ◽  
Secondary Ion

AbstractSecondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.

scholarly journals Nanocrystal Formation Via Yttrium Ion Implantation into Sapphire

1995 ◽  
Vol 396 ◽  
Author(s):  
E. M. Hunt ◽  
J. M. Hampikian ◽  
D. B. Poker
Keyword(s):  
Ion Implantation ◽  
Face Centered Cubic ◽  
Near Surface ◽  
X Ray ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Face Centered ◽  
Amorphous Surface ◽  
Yttrium Ion ◽  
Nanosized Crystals

AbstractIon implantation has been used to form nanocrystals in the near surface of single crystal A12O3. The ion fluence was 5 x 1016 Y+/cm2, and the implant energies investigated were 100, 150, and 170 keV. The morphology of the implanted region was investigated using transmission electron microscopy, x-ray energy dispersive spectroscopy, Rutherford backscattering spectroscopy and ion channeling. The implantation causes the formation of an amorphous surface layer which contains spherical nanosized crystals with a diameter of ∼13 nm. The nanocrystals are randomly oriented and exhibit a face-centered cubic structure with a lattice pmeter of ∼4.1 A ± .02 A. Preliminary chemical analysis shows that these nanocrystals are rich in aluminum and yttrium and poor in oxygen relative to the amorphous matrix.

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