Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
2010 ◽
Vol 645-648
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pp. 1159-1162
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Lateral normally-on dual gates MESFETs withstanding a drain/source voltage in excess of 200V have been fabricated on semi-insulating 4H-SiC substrate. This paper reports on the fabrication, DC characterization and in-circuit behavior of the MESFETs. Temperature dependent DC characterization has been carried out up to 473K. The performances of basic analog circuits such as an amplifier and a clock, using these MESFETs, are detailed and analyzed.
1972 ◽
Vol 30
◽
pp. 512-513
2000 ◽
Vol 24
(6)
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pp. 805-813
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1988 ◽
Vol 156
(1)
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pp. 319-329
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1988 ◽
Vol 49
(C4)
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pp. C4-713-C4-716
1990 ◽
Vol 64
(03)
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pp. 402-406
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Keyword(s):
1996 ◽
Vol 75
(03)
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pp. 515-519
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