Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.391 ◽

2010 ◽

Vol 645-648 ◽

pp. 391-394

Author(s):

Kang San Kim ◽

Gwiy Sang Chung

Keyword(s):

Thin Films ◽

Photo Luminescence ◽

X Ray Diffraction ◽

Average Pore ◽

X Ray ◽

Uv Led ◽

N Doping ◽

P Type ◽

Sic Films

This paper describes the characteristics of porous 3C-SiC with in-situ N-doping concentrations. Polycrystalline (poly) 3C-SiC thin films were deposited on p-type Si (100) substrates by APCVD using hexamethyildisilane (HMDS: Si2(CH3)6). The porous 3C-SiC (pSiC) was achieved by anodized with 380 nm UV-LED. The characteristics of the N2 doped pSiC were evaluated using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and photo luminescence (PL). Average pore diameter is about 50 nm and etched area was increased with N2 doping rate. These results are attributed to decrease the crystallinity by N2 doping. The band gaps of poly 3C-SiC films and porous 3C-SiC films were 2.5 eV and 2.7 eV, respectively.

Download Full-text

In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition

Advanced Materials Interfaces ◽

10.1002/admi.201800957 ◽

2018 ◽

Vol 5 (24) ◽

pp. 1800957 ◽

Cited By ~ 1

Author(s):

Pouyan Motamedi ◽

Ken Bosnick ◽

Ken Cadien ◽

James D. Hogan

Keyword(s):

Thin Films ◽

Phase Transformation ◽

Atomic Layer Deposition ◽

Diffraction Analysis ◽

Atomic Layer ◽

X Ray Diffraction ◽

X Ray ◽

Nickel Thin Films ◽

Layer Deposition

Download Full-text

Electric-field-induced lattice distortion in epitaxial BiFeO3 thin films as determined by in situ time-resolved x-ray diffraction

Applied Physics Letters ◽

10.1063/1.5000495 ◽

2017 ◽

Vol 111 (8) ◽

pp. 082907 ◽

Cited By ~ 2

Author(s):

Seiji Nakashima ◽

Osami Sakata ◽

Hiroshi Funakubo ◽

Takao Shimizu ◽

Daichi Ichinose ◽

...

Keyword(s):

Thin Films ◽

Electric Field ◽

Lattice Distortion ◽

X Ray Diffraction ◽

Time Resolved ◽

X Ray ◽

Bifeo3 Thin Films

Download Full-text

Thermal stability and miscibility of co-evaporated methyl ammonium lead halide (MAPbX3, X = I, Br, Cl) thin films analysed by in situ X-ray diffraction

Journal of Materials Chemistry A ◽

10.1039/c8ta02775g ◽

2018 ◽

Vol 6 (24) ◽

pp. 11496-11506 ◽

Cited By ~ 19

Author(s):

Paul Pistor ◽

Thomas Burwig ◽

Carlo Brzuska ◽

Björn Weber ◽

Wolfgang Fränzel

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Thermal Treatment ◽

Phase Evolution ◽

X Ray Diffraction ◽

Crystalline Phases ◽

X Ray ◽

Subsequent Thermal Treatment ◽

Lead Halide

We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films.

Download Full-text

The In-Situ Observation of Organic Thin Films During Growth Process by Using Grazing Incidence X-Ray Diffraction and Fluorescence Methods

Advances in X-Ray Analysis ◽

10.1007/978-1-4615-5377-9_71 ◽

1997 ◽

pp. 653-658

Author(s):

Kouichi Hayashi ◽

Toshihisa Horiuchi ◽

Kazumi Matsushige

Keyword(s):

Thin Films ◽

Growth Process ◽

Organic Thin Films ◽

Grazing Incidence ◽

In Situ Observation ◽

X Ray Diffraction ◽

X Ray ◽

Fluorescence Methods

Download Full-text

Strains, Stresses and Elastic Properties in Polycrystalline Metallic Thin Films: In Situ Deformation Combined with X-Ray Diffraction and Simulation Experiments

Materials Science Forum - Residual Stresses VII ◽

10.4028/0-87849-414-6.735 ◽

2006 ◽

pp. 735-740

Author(s):

Philippe Goudeau ◽

Damien Faurie ◽

Baptiste Girault ◽

Pierre Olivier Renault ◽

Eric Le Bourhis ◽

...

Keyword(s):

Thin Films ◽

Elastic Properties ◽

Metallic Thin Films ◽

X Ray Diffraction ◽

Simulation Experiments ◽

X Ray ◽

In Situ Deformation

Download Full-text

In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

Journal of Materials Chemistry C ◽

10.1039/c5tc02553b ◽

2015 ◽

Vol 3 (43) ◽

pp. 11357-11365 ◽

Cited By ~ 34

Author(s):

Geert Rampelberg ◽

Bob De Schutter ◽

Wouter Devulder ◽

Koen Martens ◽

Iuliana Radu ◽

...

Keyword(s):

Thin Films ◽

Diffraction Study ◽

Resistance Switching ◽

X Ray Diffraction ◽

X Ray

VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.

Download Full-text

In-situ X-ray diffraction investigations of thin films: Determination of thermoelastic constants

Fifth Size Strain Conference. Diffraction Analysis of the Microstructure of Materials ◽

10.1524/9783486992564-032 ◽

2008 ◽

pp. 253-260

Keyword(s):

Thin Films ◽

X Ray Diffraction ◽

X Ray

Download Full-text

In situ grazing-incidence X-ray diffraction during electrodeposition of birnessite thin films: Identification of solid precursors

Electrochemistry Communications ◽

10.1016/j.elecom.2011.02.029 ◽

2011 ◽

Vol 13 (5) ◽

pp. 491-494 ◽

Cited By ~ 10

Author(s):

M. Ndjeri ◽

S. Peulon ◽

M.L. Schlegel ◽

A. Chaussé

Keyword(s):

Thin Films ◽

Grazing Incidence ◽

X Ray Diffraction ◽

X Ray

Download Full-text

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment

Applied Surface Science ◽

10.1016/j.apsusc.2004.10.145 ◽

2005 ◽

Vol 244 (1-4) ◽

pp. 281-284 ◽

Cited By ~ 28

Author(s):

Naohiko Kato ◽

Ichiro Konomi ◽

Yoshiki Seno ◽

Tomoyoshi Motohiro

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Diffraction Study ◽

Crystallization Process ◽

X Ray Diffraction ◽

X Ray

Download Full-text

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

Journal of Materials Research ◽

10.1557/jmr.1997.0099 ◽

1997 ◽

Vol 12 (3) ◽

pp. 651-656 ◽

Cited By ~ 57

Author(s):

P. K. Nair ◽

L. Huang ◽

M. T. S. Nair ◽

Hailin Hu ◽

E. A. Meyers ◽

...

Keyword(s):

Thin Films ◽

Visible Region ◽

Atomic Diffusion ◽

Optical Coatings ◽

X Ray Diffraction ◽

X Ray ◽

Cell Structures ◽

Potential Applications ◽

Xrd Patterns ◽

P Type

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

Download Full-text