Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates
2010 ◽
Vol 645-648
◽
pp. 611-614
Keyword(s):
Uv Raman
◽
We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.
2014 ◽
Vol 2
(27)
◽
pp. 5404-5410
◽
2010 ◽
Vol 645-648
◽
pp. 637-641
◽
2010 ◽
Vol 645-648
◽
pp. 603-606
◽
2009 ◽
Vol 615-617
◽
pp. 223-226
◽
Keyword(s):
2014 ◽
Vol 92
◽
pp. 88-100
◽
Keyword(s):
Keyword(s):
Keyword(s):