Preparation of Textured PZT/LaNiO3 Films on LaAlO3 Substrates by Sol-Gel Process

2010 ◽  
Vol 658 ◽  
pp. 85-88
Author(s):  
Qian Li Liu ◽  
Gao Yang Zhao ◽  
Kai Li Mao ◽  
Yuan Qing Chen
Keyword(s):  
Sheet Resistance ◽  
Remanent Polarization ◽  
Quartz Substrate ◽  
Sol Gel ◽  
Random Orientation ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films

Using La(NO3)3•nH2O and Ni(CH3COO)2•4H2O as starting materials, alcohol mixed with methoxyethanol as solvent, the LaNiO3 (LNO) solution was prepared. Using this solution, conducting LNO films with sheet resistance of 10Ω were obtained. XRD and HRTEM indicate that the LNO films are epitaxially grown on LaAlO3 (LAO) substrates. Using Pb(CH3COO)2•3H2O, La(NO3)3•nH2O, Ti(OC4H9)4, Zr(OC4H9)4 as starting materials, the PZT films were prepared on the LNO films. The PZT films are c-oriented. The as-prepared PZT film has a remanent polarization of 34.7µC/cm2, superior to the PZT film with random orientation and a remanent polarization of 18.4µC/cm2 prepared on ITO/quartz substrate.

Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

1994 ◽  
Vol 360 ◽  
Author(s):  
D.A. Barrow ◽  
T.E. Petroff ◽  
M. Sayer
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Resonant Vibrations ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
High Frequency Resonance ◽  
Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

2012 ◽  
Vol 204-208 ◽  
pp. 4207-4210 ◽  
Author(s):  
Yu Fei You ◽  
C. H. Xu ◽  
Jun Peng Wang ◽  
Yu Liang Liu ◽  
Jin Feng Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Pzt Ceramics ◽  
X Ray ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Pzt Ferroelectric Thin Films ◽  
Electronic Microscope

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Comparative Study of Thin PZT Sol-gel Films Deposited on Pt and GaN Substrates

2007 ◽  
Vol 1034 ◽  
Author(s):  
Serguei A. Chevtchenko ◽  
Francisco A. Agra ◽  
Jinqiao Xie ◽  
Hadis Morkoç
Keyword(s):  
Comparative Study ◽  
Remanent Polarization ◽  
Piezoelectric Coefficient ◽  
Sol Gel ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Sol Gel Films

AbstractWe provide a comparative study of the piezoresponse in thin Pb(ZrxTi1−x)O3 (PZT) films deposited onto GaN/sapphire and Pt/Ti/SiO2/Si substrates using the sol-gel process. The effective piezoelectric coefficient was measured by Piezoresponse Force Microscopy. The resulting effective piezoelectric coefficient obtained for PZT(∼180 nm)/GaN/sapphire structure is 16.7 ± 3.4 pm/V and for PZT(∼180 nm)/Pt/Ti/SiO2/Si structure is 7.8 ± 0.8 pm/V. We also discuss the substrate clamping effect of both structures and explain the relatively stronger piezoresponse of PZT on GaN by different orientation of films formed on the two types of substrates. In this investigation, the PZT thin films crystallized with preferred (100) and (110) orientations on platinum and GaN, respectively. The phase mode of the Piezoresponse Force Microscopy was used to demonstrate remanent polarization in PZT/GaN/sapphire structure.

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

2007 ◽  
Vol 280-283 ◽  
pp. 239-242 ◽  
Author(s):  
Wen Gong ◽  
Xiang Cheng Chu ◽  
Jing Feng Li ◽  
Zhi Lun Gui ◽  
Long Tu Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Wafers ◽  
Seeding Layer ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

Microstructural and Electrical Properties of Ferroelectric Capacitors with Pt/RuO2 Hybrid Electrodes

1994 ◽  
Vol 361 ◽  
Author(s):  
H.N. Al-Shareef ◽  
Y.L. Chen ◽  
O. Auciello ◽  
A.I. Kingon
Keyword(s):  
Leakage Current ◽  
Sol Gel ◽  
Second Phase ◽  
Leakage Currents ◽  
Barrier Heights ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Pyrochlore Type ◽  
Ferroelectric Capacitors

ABSTRACTThin films of pb(Zr0.53Ti0.47)O3 (PZT) grown in our laboratory on RuO2 electrodes by the sol-gel process are characterized by high leakage currents and by the presence of a pyrochlore-type second phase. We have used a thin Pt interlayer between the PZT film and RuO2 bottom electrode to produce RuO2/PZT/100ÅPt/RuO2/SiO2/Si capacitor structures. It is found that use of such a Pt interlayer significantly reduces or eliminates the second phase in the PZT films, and lowers their leakage currents by more than four orders of magnitude. At the same time, the excellent resistance to polarization fatigue characteristic of the RuO2/PZT/RuO2 capacitors is maintained. The microstructures of PZT films grown on RuO2 electrodes with and without the 100Å Pt interlayer are compared. In addition, the voltage, temperature, and polarity dependence of the leakage current in these samples was measured. The data suggest that leakage current in these samples is most likely Schottky emission controlled. The barrier heights are determined to be about 0.80 and 0.73 eV for the top and bottom interfaces, respectively.

EFFECT OF EUROPIUM DOPING ON ELECTRICAL PROPERTIES OF PZT FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 1-5 ◽  
Author(s):  
CHUNYU SHAO ◽  
JING WANG ◽  
WEIJIE DONG ◽  
YAN CUI ◽  
MIN JI
Keyword(s):  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Doping Concentration ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Europium Doping ◽  
Pzt Film ◽  
Pzt Films ◽  
The Eu

Samples of lead zirconate titanate Pb ( Zr 0.53 Ti 0.47) O 3 with europium ( Eu ) doping concentration of 0, 0.5, 1.5, 3 mol% (PEZT) were fabricated by sol–gel method. XRD spectra showed that the introduction of Eu into PZT favored the growth of (100) orientation. With 3% Eu content, the preferential orientation of the film converted from (111) to (100) orientation. The Eu -doped PZT films exhibited lower leakage current less than 10-9 A/cm2 and the behavior of leakage current was discussed in terms of defect chemistry theorem. When Eu content was 1.5%, the remanent polarization (P r ) increased to 28 μ C/cm2 which was much higher than that of undoped PZT film.

One-Axis-Oriented Crystal Growth of Lead Zirconate Titanate Thin Films on Metal Substrates Using Perovskite-Type Oxide Nanosheet Layer

2013 ◽  
Vol 582 ◽  
pp. 15-18
Author(s):  
Y. Minemura ◽  
Y. Kondoh ◽  
H. Funakubo ◽  
Hiroshi Uchida
Keyword(s):  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Oriented Crystal ◽  
Solution Deposition ◽  
Pzt Film ◽  
Perovskite Type Oxide ◽  
Pzt Films ◽  
Perovskite Type

One-axis-oriented Pb (Zr,Ti)O3(PZT) films were fabricated using a chemical solution deposition technique on (111)Pt/TiO2/(100)Si and Inconel625 substrates buffered by nanosheet Ca2Nb3O10(ns-CN). The (001)-oriented PZT crystals (Zr/Ti=0.40:0.60, tetragonal) were preferentially grown on (001)ns-CN/Inconel625, whereas the PZT crystals deposited on (001)ns-CN/(111)Pt/ TiO2/(100)Si exhibited preferential PZT(100) orientation. The resulting PZT film on (001)ns-CN/Inconel625 indicated remanent polarization of approximately 59 μC/cm2, which was significantly larger than that on (001)ns-CN/(111)Pt/TiO2/(100)Si.

Porous PZT Films Prepared by PVP Assisted Sol-Gel Process

2015 ◽  
Vol 484 (1) ◽  
pp. 43-48 ◽  
Author(s):  
D. Seregin ◽  
K. Vorotilov ◽  
A. Sigov ◽  
N. Kotova
Keyword(s):  
Sol Gel ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Porous Pzt

Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

1994 ◽  
Vol 361 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Kensuke Itani ◽  
Bum-Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Buffer Layers ◽  
Si Substrates ◽  
Pzt Film ◽  
Pzt Films ◽  
Evaporation Technique ◽  
Gel Technique ◽  
Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

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