Comparative Study of Thin PZT Sol-gel Films Deposited on Pt and GaN Substrates

2007 ◽  
Vol 1034 ◽  
Author(s):  
Serguei A. Chevtchenko ◽  
Francisco A. Agra ◽  
Jinqiao Xie ◽  
Hadis Morkoç
Keyword(s):  
Comparative Study ◽  
Remanent Polarization ◽  
Piezoelectric Coefficient ◽  
Sol Gel ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Sol Gel Films

AbstractWe provide a comparative study of the piezoresponse in thin Pb(ZrxTi1−x)O3 (PZT) films deposited onto GaN/sapphire and Pt/Ti/SiO2/Si substrates using the sol-gel process. The effective piezoelectric coefficient was measured by Piezoresponse Force Microscopy. The resulting effective piezoelectric coefficient obtained for PZT(∼180 nm)/GaN/sapphire structure is 16.7 ± 3.4 pm/V and for PZT(∼180 nm)/Pt/Ti/SiO2/Si structure is 7.8 ± 0.8 pm/V. We also discuss the substrate clamping effect of both structures and explain the relatively stronger piezoresponse of PZT on GaN by different orientation of films formed on the two types of substrates. In this investigation, the PZT thin films crystallized with preferred (100) and (110) orientations on platinum and GaN, respectively. The phase mode of the Piezoresponse Force Microscopy was used to demonstrate remanent polarization in PZT/GaN/sapphire structure.

Ferroelectric Domain Structure and Local Piezoelectric Properties of Sol-Gel Derived Pb(Zr1-xTix)O3 Films

2003 ◽  
Vol 784 ◽  
Author(s):  
I. K. Bdikin ◽  
V. V. Shvartsman ◽  
A. L. Kholkin ◽  
Seung-Hyun Kim
Keyword(s):  
Piezoelectric Coefficient ◽  
Bottom Electrode ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Statistical Processing ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Ferroelectric Domain Structure ◽  
Pzt Films ◽  
Clear Predominance

ABSTRACTHigh-resolution domain studies are performed on Pb(Zr1-xTix)O3 (PZT) films of different thicknesses and compositions (x=0.30, 0.48, and 0.70) by piezoresponse force microscopy (PFM). Depending on the composition, the orientation of the films is varied from purely (111) (related to the orientation of Pt bottom electrode) to a more random texture. Statistical processing of the obtained domain images is used to analyze the correlation between the composition of the films and their nanoscale piezoelectric properties. It is shown that the virgin (unpoled) films possess large piezoelectric activity comparable to that after local poling (self-polarization effect). This corresponds to a clear predominance of the domains with polarization oriented from the free surface of the film to the bottom electrode. Both the average piezoelectric signal and half-width of the piezoelectric histograms depend on the composition and thickness of the films. The largest local piezoelectric coefficient and the broadest distribution are found for tetragonal (x=0.70) films with almost pure (111) texture. The results are discussed in terms of texture and PFM instrumentation effects on local piezoelectric measurements.

THICKNESS-DEPENDENT MICROSTRUCTURES AND ELECTRICAL PROPERTIES OF LiTaO3 THIN FILMS PREPARED BY A Sol-Gel PROCESS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3404-3411
Author(s):  
M. C. KAO ◽  
H. Z. CHEN ◽  
S. L. YOUNG ◽  
C. C. LIN ◽  
C. C. YU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Relative Dielectric Constant ◽  
Coating Technology ◽  
Si Substrates ◽  
Sol Gel Process

LiTaO 3 thin films were deposited on Pt / Ti / SiO 2/ Si substrates by means of a sol-gel spin-coating technology and rapid thermal annealing (RTA). The influence of various annealing treatments on the characteristics of the thin films were studied by varying the single-annealed-layer thickness (50 ~ 200 nm ) and heating temperatures (500 ~ 800° C ) of the samples. Experimental results reveal that the single-annealed-layer strongly influences grain size, dielectricity and ferroelectricity of LiTaO 3 thin films. The grain size of LiTaO 3 thin film decreases slightly with increasing thickness of the single-annealed-layer, and highly c-axis orientated LiTaO 3 films can be obtained for a single-annealed-layer of 50 nm. When the thickness of the single-annealed-layer was increased from 50 to 200 nm, the relative dielectric constant of LiTaO 3 thin film decreased from 65 to 35, but the dielectric loss factor (tanδ) was increased. The LiTaO 3 films with the single-annealed-layer of 50 nm showed excellent ferroelectric properties in terms of a remanent polarization ( P r) of 12.3 μ C /cm2 (Ec ∼ 60 kV/cm), and a low current density of 5.2×l0-8 A /cm2 at 20 kV/cm.

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Growth of highly (100)-oriented Zr-rich PZT films on Pt/Ti/SiO2/Si substrates by a sol-gel process

2001 ◽  
Vol 260 (1) ◽  
pp. 175-181 ◽  
Author(s):  
Xiaorong Fu ◽  
Zhitang Song ◽  
Chenglu Lin ◽  
Helen. L. W. Chan ◽  
Chung-Loong Choy
Keyword(s):  
Sol Gel ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Pzt Films

Preparation of Textured PZT/LaNiO3 Films on LaAlO3 Substrates by Sol-Gel Process

2010 ◽  
Vol 658 ◽  
pp. 85-88
Author(s):  
Qian Li Liu ◽  
Gao Yang Zhao ◽  
Kai Li Mao ◽  
Yuan Qing Chen
Keyword(s):  
Sheet Resistance ◽  
Remanent Polarization ◽  
Quartz Substrate ◽  
Sol Gel ◽  
Random Orientation ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films

Using La(NO3)3•nH2O and Ni(CH3COO)2•4H2O as starting materials, alcohol mixed with methoxyethanol as solvent, the LaNiO3 (LNO) solution was prepared. Using this solution, conducting LNO films with sheet resistance of 10Ω were obtained. XRD and HRTEM indicate that the LNO films are epitaxially grown on LaAlO3 (LAO) substrates. Using Pb(CH3COO)2•3H2O, La(NO3)3•nH2O, Ti(OC4H9)4, Zr(OC4H9)4 as starting materials, the PZT films were prepared on the LNO films. The PZT films are c-oriented. The as-prepared PZT film has a remanent polarization of 34.7µC/cm2, superior to the PZT film with random orientation and a remanent polarization of 18.4µC/cm2 prepared on ITO/quartz substrate.

Dielectric and Piezoelectric Properties of PZT 52/48 Thick Films with (100) and Random Crystallorgraphic Orientation

2000 ◽  
Vol 655 ◽  
Author(s):  
Q. F. Zhou ◽  
E. Hong ◽  
R. Wolf ◽  
S. Trolier-McKinstry
Keyword(s):  
Microelectromechanical Systems ◽  
Piezoelectric Properties ◽  
Thick Films ◽  
Sol Gel ◽  
Active Components ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Oriented Films ◽  
Dielectric And Piezoelectric Properties

AbstractFerroelectric Pb(Zr1划xTix)O3 (PZT) films have been extensively studied for active components in microelectromechanical systems. The properties of PZT films depend on many parameters, including composition, orientation, film thickness and microstructure. In this study, the effects of crystallographic orientation on the dielectric and transverse piezoelectric properties of Pb(Zr0.52Ti0.48)O3 (PZT 52/48) films are reported. Crack free random and highly (100) oriented PZT(52/48) films up to ∼ 7 μm thick were deposited using a sol-gel process on Pt (111)/Ti/SiO2/Si and Pt(100)/SiO2/Si substrates, respectively. The dielectric permittivity (at 1kHz) for the (100) oriented films was 980-1000, and for the random films ∼ 930-950. In both cases, tanä was less than 0.03. The remanent polarization (∼ 30 μC/cm2) of random PZT films was larger than that of (100) oriented PZT films. The transverse piezoelectric coefficient (d31(eff)) of PZT films was measured by the wafer flexure method. The d31(eff) coefficient of random PZT thick films (-80pC/N) was larger than that of (100) oriented films (-60pC/N) when poled at 80 kV/cm for 15 min.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

Infrared Characterization of PMMA-SiO2 Hybrid Glasses Obtained by Sol-Gel Process

2010 ◽  
Vol 1278 ◽  
Author(s):  
L.L. Díaz-Flores ◽  
A. S. López Rodríguez ◽  
P. SifuentesGallardo ◽  
M.A. Hernàndez Rivera ◽  
M.a Garnica Romo ◽  
...  
Keyword(s):  
Sol Gel ◽  
Chemical Properties ◽  
Hybrid Coatings ◽  
Force Microscopy ◽  
Air Atmosphere ◽  
Atomic Force ◽  
Sol Gel Process ◽  
Traditional Process ◽  
And Chemical Properties

AbstractThis work is about the production of hybrid coatings of the system SiO2-PMMA (PMMA, polymethylmethacrylate). These materials have interesting mechanical and chemical properties useful for anticorrosive and wear resistance applications. SiO2-PMMA hybrids were obtained by the sol-gel traditional process, using tetraethylorthosilicate (TEOS) and methylmethacrylate (MMA) by Aldrich Co, as starting reagents. The SiO2:PMMA ratio was varied from 0:1 to about 1:1 at air atmosphere deposition. The coatings were obtained on acrylic sheets and silicon wafers. A diversity of coatings with chemical composition ranging from SiO2 and PMMA to obtain the SiO2-PMMA hybrids were obtained. Infrared (IR) and atomic force microscopy (AFM), were performed to determinate structural and morphological behavior.

Intermetallic Formation in PZT for MEMS Structures

2012 ◽  
Vol 1427 ◽  
Author(s):  
Kanu priya Sharma ◽  
Thomas Oseroff ◽  
Leda Lunardi
Keyword(s):  
Electron Microscopy ◽  
Lead Zirconate Titanate ◽  
Surface Film ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Mems Devices ◽  
Aging Effects ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Pzt Films

ABSTRACTCrack free lead zirconate titanate (PZT) films for piezoelectric based MEMS devices have been prepared by a multiple coating sol gel process on platinized silicon (100) substrates. Rapid thermal annealing and Conventional furnace annealing were used for densification and crystallization of the amorphous PZT films. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) were used to observe surface film morphology and grain growth. The phase content of the films was analyzed using X-ray diffraction. The role of intermetallics formed during the heat treatment in the growth of different orientations has also been observed. Film aging critical for device performance has been observed and methods to revert aging effects have been examined and discussed.

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