Traps at the SiC/SiO2-Interface

2000 ◽  
Vol 640 ◽  
Author(s):  
Gerhard Pensl ◽  
Michael Bassler ◽  
Florin Ciobanu ◽  
Valeri Afanas'ev ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Conduction Band ◽  
Interface States ◽  
Strong Increase ◽  
Interface Traps ◽  
Temperature Range ◽  
Density Of Interface States

ABSTRACTThe density of interface states Dit at SiC/SiO2 interfaces of different SiC polytypes (4H-, 6H- and 15R-SiC) is monitored and the origin of these states is discussed. The hydrogenation behavior of interface states in the temperature range from 250°C to 1000°C is studied by C-V and G-V investigations. The strong increase of Dit close to the 4H-SiC conduction band is attributed to defects located in the oxide (so-called “Near Interface Traps”).

Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium

2011 ◽  
Vol 679-680 ◽  
pp. 334-337 ◽  
Author(s):  
Pétur Gordon Hermannsson ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Energy Distribution ◽  
Oxidation Rate ◽  
Alkali Metals ◽  
Interface States ◽  
Significant Enhancement ◽  
Interface Traps ◽  
Strong Reduction ◽  
Dry Oxidation ◽  
Density Of Interface States

We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that both alkali metals enhance the oxidation rate of SiC and strongly influence the energy distribution of interface states.

scholarly journals Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band

2012 ◽  
Vol 109 (10) ◽  
Author(s):  
A. Jain ◽  
J.-C. Rojas-Sanchez ◽  
M. Cubukcu ◽  
J. Peiro ◽  
J. C. Le Breton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Spin Injection ◽  
Interface States ◽  
Spin Accumulation

scholarly journals Charge transport mechanism in copper phthalocyanine thin films with and without traps

RSC Advances ◽  
2017 ◽  
Vol 7 (86) ◽  
pp. 54911-54919 ◽  
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Pramod Kumar ◽  
Budhi Singh ◽  
Subhasis Ghosh
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Transport Mechanism ◽  
Copper Phthalocyanine ◽  
Organic Thin Films ◽  
Interface States ◽  
Charge Transport Mechanism ◽  
Density Of Interface States

We investigate the charge transport mechanism in copper phthalocyanine thin films with and without traps. We find that the density of interface states at the grain boundaries can decide the mechanism of charge transport in organic thin films.

Passivation and Depassivation of Interface Traps at the SiO2/4H-SiC Interface by Potassium Ions

2012 ◽  
Vol 717-720 ◽  
pp. 761-764 ◽  
Author(s):  
Pétur Gordon Hermannsson ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Thermal Stability ◽  
Conduction Band ◽  
Energy Levels ◽  
Sample Surface ◽  
Conduction Band Edge ◽  
Potassium Ions ◽  
Interface Traps ◽  
Bias Stress ◽  
Dry Oxidation ◽  
Thermal Stability Of

We investigate the passivation of interface traps by method of oxidizing Si-face 4H-SiC in the presence of potassium as well as examining the thermal stability of this passivation process. It is observed that this type of dry oxidation leads to a strong passivation of interface traps at the SiO2/4H-SiC interface with energy levels near the SiC conduction band edge. Furthermore, it is observed that if potassium ions residing at the SiO2/SiC interface are moved towards the sample surface by exposing them to ultraviolet light (UV) under an applied depletion bias stress at high temperatures the interface traps become electrically active again and are evidently depassivated. These findings are in line with recently a published model of the effect of sodium on such interface states

ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere

2005 ◽  
Vol 483-485 ◽  
pp. 559-562 ◽  
Author(s):  
Kun Yuan Gao ◽  
Thomas Seyller ◽  
Konstantin V. Emtsev ◽  
Lothar Ley ◽  
Florin Ciobanu ◽  
...  
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
Hydrogen Atmosphere ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Strong Increase ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement

Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance spectroscopy measurement and photoelectron spectroscopy (PES). The resultant density of interface trap (Dit) from admittance spectroscopy measurement is reduced near mid gap, but increases strongly towards the conduction band edge. Systematic PES measurements show that hydrogen annealing introduces Si4+ as a new component besides Si0 and Si+. Using different electron escape depths for photon electrons, depth profiling of Si in its different oxidation states was performed. The result indicates the formation of a top SiO2 layer and a rougher interfacial layer containing more Si+ and Si4+ which could be responsible for the strong increase of Dit just below the conduction band edge.

Conductance technique measurements of the density of interface states between ZnS:Mn andp‐silicon

1991 ◽  
Vol 70 (9) ◽  
pp. 4950-4957 ◽  
Author(s):  
Andrew J. Simons ◽  
Mohammed H. Tayarani‐Najaran ◽  
Clive B. Thomas
Keyword(s):  
Interface States ◽  
Conductance Technique ◽  
Density Of Interface States

Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method

2016 ◽  
Vol 858 ◽  
pp. 437-440
Author(s):  
Munetaka Noguchi ◽  
Toshiaki Iwamatsu ◽  
Hiroyuki Amishiro ◽  
Hiroshi Watanabe ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Energy Level ◽  
Energy Distribution ◽  
Conduction Band ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Electrical Characteristics ◽  
Conductance Method ◽  
Effect Transistor

The electrical characteristics of the SiC metal-oxide-semiconductor field effect transistor (MOSFET) have been limited by large amount of states at the SiO2/SiC interface. In this study, the accuracy of the energy level of the interface states extracted by hypothetical high frequency extreme, which is conventionally used, is experimentally examined. Conductance measurements at low temperature between 65 K and 100 K reveal that the extracted energy distribution of the interface states at nitrided SiO2/SiC interface close to the conduction band edge depends on the measurement temperature. It is demonstrated that conductance method at 65K enables us more accurate evaluation of the interface states at the SiO2/SiC interface and found that the interface states density (Dit) of nitride SiO2/SiC interface is over 1013 cm-2eV-1 at energy level of 0.1 eV below the conduction band edge.

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